Ministry of Education
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Dr Chandan Yadav

vidwan id: 526827
Male

Assistant Professor, Department of Electrical Engineering
Indian Institute of Technology Jammu

Orchid Icon 0000-0002-6811-9759 Google Scholar Icon 55767883400 Researcher Icon HWO-7942-2023 Google Scholar Icon ciTHdPUAAAAJ

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 46
Books 0
Proceedings 0

Publications

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Scopus

Citations 652
h-index 14

CrossRef

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Citations 422
h-index 12
Google Scholar

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Professional Recognition

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Community & Membership

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Bio

Electrical Engineering

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Jammu
  • IIT Jammu, Jagti, Nagrota
PhD
Indian Institute of Technology Kanpur 2017
Assistant Professor Dec 2023 – Present
Indian Institute of Technology Jammu | Department of Electrical Engineering

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Co-Authors (11)

Harshit

Dr Harshit Agarwal

Indian Institute of Technology Jodhpur

Amit

Prof Amit Agarwal

Indian Institute of Technology Kanpur

Anjan

Prof Anjan Chakravorty

Indian Institute of Technology Madras

Somnath

Dr Somnath Bhowmick

Indian Institute of Technology Kanpur

Yogesh Singh

Dr Yogesh Singh Chauhan

Indian Institute of Technology Kanpur

Gopi Krishna

Dr Gopi Krishna Saramekala

National Institute of Technology Calicut

Nihar Ranjan

Dr Nihar Ranjan Mohapatra

Indian Institute of Technology Gandhinagar

Pramod Kumar

Dr Pramod Kumar Tiwari

Indian Institute of Technology Patna

Pragya

Dr Pragya Kushwaha

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Prof Sheikh Aamir Ahsan

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Pramod Kumar

Prof Pramod Kumar Tiwari

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Scholarly Work

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Scholarly Publications

Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence

Open Access
Conference Paper
Year: 2016. Volume: 2016-March , Pages: 328-333 .
Authors: Yadav C.;Dutta A.;Sirohi S.;Ethirajan T.;Chauhan Y.
DOI 10.1109/VLSID.2016.85

Analysis of Quantum Capacitance Effect in Ultra-Thin-Body III-V Transistor

Open Access
Conference Paper
Year: 2016. Volume: 2016-March , Pages: 571-572 .
Authors: Yadav C.;Agarwal A.;Chauhan Y.
DOI 10.1109/VLSID.2016.86
7 7

Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2016. Volume: 4 , Issue: 6 , Pages: 396-401 .
Authors: Ganeriwala M.D.;Yadav C.;Mohapatra N.R.;Khandelwal S.;Hu C.;Chauhan Y.S.
DOI 10.1109/JEDS.2016.2586116
12 14

Capacitance Modeling in III-V FinFETs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2015. Volume: 62 , Issue: 11 , Pages: 3892-3897 .
Authors: Yadav C.;Duarte J.P.;Khandelwal S.;Agarwal A.;Hu C.;Chauhan Y.S.
DOI 10.1109/TED.2015.2480380
24 27

Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2015. Volume: 3 , Issue: 3 , Pages: 240-243 .
Authors: Agarwal H.;Gupta C.;Kushwaha P.;Yadav C.;Duarte J.P.;Khandelwal S.;Hu C.;Chauhan Y.S.
DOI 10.1109/JEDS.2015.2415584
22 21

Modeling the impact of substrate depletion in FDSOI MOSFETs

Open Access
Article
Year: 2015. Volume: 104 , Pages: 6-11 .
Authors: Kushwaha P.;Paydavosi N.;Khandelwal S.;Yadav C.;Agarwal H.;Duarte J.P.;Hu C.;Chauhan Y.S.
DOI 10.1016/j.sse.2014.11.002
27 27

Threshold voltage modeling of GaN based normally-off tri-gate transistor

Open Access
Conference Paper
Year: 2015.
Authors: Yadav C.;Kushwaha P.;Agarwal H.;Chauhan Y.S.
DOI 10.1109/INDICON.2014.7030522
7 9

BSIM-IMG with improved surface potential calculation recipe

Open Access
Conference Paper
Year: 2015.
Authors: Kushwaha P.;Yadav C.;Agarwal H.;Chauhan Y.S.;Srivatsava J.;Khandelwal S.;Duarte J.P.;Hu C.
DOI 10.1109/INDICON.2014.7030498
4 7