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Dr Chandan Yadav

vidwan id: 526827
Male

Assistant Professor, Department of Electrical Engineering
Indian Institute of Technology Jammu

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 46
Books 0
Proceedings 0

Publications

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Scopus

Citations 652
h-index 14

CrossRef

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Citations 422
h-index 12
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Professional Recognition

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Bio

Electrical Engineering

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Jammu
  • IIT Jammu, Jagti, Nagrota
PhD
Indian Institute of Technology Kanpur 2017
Assistant Professor Dec 2023 – Present
Indian Institute of Technology Jammu | Department of Electrical Engineering

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Co-Authors (11)

Harshit

Dr Harshit Agarwal

Indian Institute of Technology Jodhpur

Amit

Prof Amit Agarwal

Indian Institute of Technology Kanpur

Anjan

Prof Anjan Chakravorty

Indian Institute of Technology Madras

Somnath

Dr Somnath Bhowmick

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Yogesh Singh

Dr Yogesh Singh Chauhan

Indian Institute of Technology Kanpur

Gopi Krishna

Dr Gopi Krishna Saramekala

National Institute of Technology Calicut

Nihar Ranjan

Dr Nihar Ranjan Mohapatra

Indian Institute of Technology Gandhinagar

Pramod Kumar

Dr Pramod Kumar Tiwari

Indian Institute of Technology Patna

Pragya

Dr Pragya Kushwaha

Indian Institute of Technology Jodhpur

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Prof Sheikh Aamir Ahsan

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Pramod Kumar

Prof Pramod Kumar Tiwari

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Scholarly Work

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Scholarly Publications

Charge-Based Modeling of Transition Metal Dichalcogenide Transistors Including Ambipolar, Trapping, and Negative Capacitance Effects

Open Access
Article

Atomistic simulation and compact modeling of atomically thin transistors

Open Access
Conference Paper
Authors: Chauhan Y.S.;Yadav C.;Dasgupta A.;Rastogi P.

Compact Modeling of Charge, Capacitance, and Drain Current in III-V Channel Double Gate FETs

Open Access
Article

Compact modeling of transition metal dichalcogenide based thin body transistors and circuit validation

Open Access
Article

Compact Modeling of Gate Capacitance in III-V Channel Quadruple-Gate FETs

Open Access
Article

Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: Thickness scaling

Open Access
Article
Authors: Jain P.;Rastogi P.;Yadav C.;Agarwal A.;Chauhan Y.S.

Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour

Open Access
Article
Authors: Jain P.;Yadav C.;Agarwal A.;Chauhan Y.S.

Modeling of Quantum Confinement and Capacitance in III-V Gate-All-Around 1-D Transistors

Open Access
Article