Ministry of Education
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Dr Chandan Yadav

vidwan id: 526827
Male

Assistant Professor, Department of Electrical Engineering
Indian Institute of Technology Jammu

Orchid Icon 0000-0002-6811-9759 Google Scholar Icon 55767883400 Researcher Icon HWO-7942-2023 Google Scholar Icon ciTHdPUAAAAJ

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 46
Books 0
Proceedings 0

Publications

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Scopus

Citations 652
h-index 14

CrossRef

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Citations 422
h-index 12
Google Scholar

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Professional Recognition

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Community & Membership

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Bio

Electrical Engineering

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Jammu
  • IIT Jammu, Jagti, Nagrota
PhD
Indian Institute of Technology Kanpur 2017
Assistant Professor Dec 2023 – Present
Indian Institute of Technology Jammu | Department of Electrical Engineering

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Co-Authors (11)

Harshit

Dr Harshit Agarwal

Indian Institute of Technology Jodhpur

Amit

Prof Amit Agarwal

Indian Institute of Technology Kanpur

Anjan

Prof Anjan Chakravorty

Indian Institute of Technology Madras

Somnath

Dr Somnath Bhowmick

Indian Institute of Technology Kanpur

Yogesh Singh

Dr Yogesh Singh Chauhan

Indian Institute of Technology Kanpur

Gopi Krishna

Dr Gopi Krishna Saramekala

National Institute of Technology Calicut

Nihar Ranjan

Dr Nihar Ranjan Mohapatra

Indian Institute of Technology Gandhinagar

Pramod Kumar

Dr Pramod Kumar Tiwari

Indian Institute of Technology Patna

Pragya

Dr Pragya Kushwaha

Indian Institute of Technology Jodhpur

Sheikh

Prof Sheikh Aamir Ahsan

National Institute of Technology Srinagar

Pramod Kumar

Prof Pramod Kumar Tiwari

National Institute of Technology Rourkela

Scholarly Work

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Scholarly Publications

Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and Sub-mmW Frequencies Measurements

Open Access
Article
IEEE Transactions on Terahertz Science and Technology. Year: 2021. Volume: 11 , Issue: 4 , Pages: 367-374 .
Authors: Cabbia M.;Fregonese S.;Deng M.;Curutchet A.;Yadav C.;Celi D.;De Matos M.;Zimmer T.
DOI 10.1109/TTHZ.2021.3059337
3

Analysis of High-Frequency Measurement of Transistors along with Electromagnetic and SPICE Cosimulation

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2020. Volume: 67 , Issue: 11 , Pages: 4770-4776 .
Authors: Fregonese S.;Cabbia M.;Yadav C.;Deng M.;Panda S.R.;De Matos M.;Celi D.;Chakravorty A.;Zimmer T.
DOI 10.1109/TED.2020.3022603
11 12

Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2FETs

Open Access
Conference Paper
Year: 2020.
Authors: Nandan K.;Yadav C.;Rastogi P.;Toral-Lopez A.;Marin-Sanchez A.;Marin E.G.;Ruiz F.G.;Bhowmick S.;Chauhan Y.S.
DOI 10.1109/EDTM47692.2020.9117875
3 3

Compact Modeling of Multi-Layered MoS2FETs including Negative Capacitance Effect

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2020. Volume: 8 , Pages: 1177-1183 .
Authors: Nandan K.;Yadav C.;Rastogi P.;Toral-Lopez A.;Marin-Sanchez A.;Marin E.G.;Ruiz F.G.;Bhowmick S.;Chauhan Y.S.
DOI 10.1109/JEDS.2020.3021031
7 6

Machine learning based device simulation using multi-variable non-linear regression to assess the impact of device parameter variability on threshold voltage of double gate-all-around (DGAA) mosfet

Open Access
Conference Paper
Year: 2020. Pages: 64-67 .
Authors: Moparthi S.;Yadav C.;Saramekala G.K.;Tiwari P.K.
DOI 10.1109/ICCS51219.2020.9336608
2 8

SiGe HBT Device Characterization up-to 500 GHz: Procedure and Layout Improvement of Calibration Standards

Open Access
Conference Paper
Year: 2020.
Authors: Panda S.R.;Cabbia M.;Deng M.;Fregonese S.;Yadav C.;Chakravorty A.;Zimmer T.
DOI 10.1109/ICEE50728.2020.9777022
1 1

A Comprehensive Physics-Based Current-Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2020. Volume: 67 , Issue: 11 , Pages: 5188-5195 .
Authors: Ahsan S.A.;Singh S.K.;Yadav C.;Marin E.G.;Kloes A.;Schwarz M.
DOI 10.1109/TED.2020.3020900
12

Silicon Test Structures Design for Sub-THz and THz Measurements

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2020. Volume: 67 , Issue: 12 , Pages: 5639-5645 .
Authors: Cabbia M.;Yadav C.;Deng M.;Fregonese S.;De Matos M.;Zimmer T.
DOI 10.1109/TED.2020.3031575
13