Ministry of Education
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Dr Chandan Yadav

vidwan id: 526827
Male

Assistant Professor, Department of Electrical Engineering
Indian Institute of Technology Jammu

Orchid Icon 0000-0002-6811-9759 Google Scholar Icon 55767883400 Researcher Icon HWO-7942-2023 Google Scholar Icon ciTHdPUAAAAJ

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 46
Books 0
Proceedings 0

Publications

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Scopus

Citations 652
h-index 14

CrossRef

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Citations 422
h-index 12
Google Scholar

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Professional Recognition

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Community & Membership

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Bio

Electrical Engineering

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Jammu
  • IIT Jammu, Jagti, Nagrota
PhD
Indian Institute of Technology Kanpur 2017
Assistant Professor Dec 2023 – Present
Indian Institute of Technology Jammu | Department of Electrical Engineering

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Co-Authors (11)

Harshit

Dr Harshit Agarwal

Indian Institute of Technology Jodhpur

Amit

Prof Amit Agarwal

Indian Institute of Technology Kanpur

Anjan

Prof Anjan Chakravorty

Indian Institute of Technology Madras

Somnath

Dr Somnath Bhowmick

Indian Institute of Technology Kanpur

Yogesh Singh

Dr Yogesh Singh Chauhan

Indian Institute of Technology Kanpur

Gopi Krishna

Dr Gopi Krishna Saramekala

National Institute of Technology Calicut

Nihar Ranjan

Dr Nihar Ranjan Mohapatra

Indian Institute of Technology Gandhinagar

Pramod Kumar

Dr Pramod Kumar Tiwari

Indian Institute of Technology Patna

Pragya

Dr Pragya Kushwaha

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Sheikh

Prof Sheikh Aamir Ahsan

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Pramod Kumar

Prof Pramod Kumar Tiwari

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Scholarly Work

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Scholarly Publications

Silicon Test Structures Design for Sub-THz and THz Measurements

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2020. Volume: 67 , Issue: 12 , Pages: 5639-5645 .
Authors: Cabbia M.;Yadav C.;Deng M.;Fregonese S.;De Matos M.;Zimmer T.
DOI 10.1109/TED.2020.3031575
13

Importance and Requirement of Frequency Band Specific RF Probes em Models in Sub-THz and THz Measurements up to 500 GHz

Open Access
Article
IEEE Transactions on Terahertz Science and Technology. Year: 2020. Volume: 10 , Issue: 5 , Pages: 558-563 .
Authors: Yadav C.;Deng M.;Fregonese S.;Cabbia M.;De Matos M.;Plano B.;Zimmer T.
DOI 10.1109/TTHZ.2020.3004517
32

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Open Access
Review
IEEE Journal of the Electron Devices Society. Year: 2020. Volume: 8 , Pages: 1363-1372 .
Authors: Fregonese S.;Deng M.;Cabbia M.;Yadav C.;De Matos M.;Zimmer T.
DOI 10.1109/JEDS.2020.3036135
6

On the Variation in Short-Open De-embedded S-parameter Measurement of SiGe HBT upto 500 GHz

Open Access
Conference Paper
Year: 2019. Pages: 264-267 .
Authors: Yadav C.;Fregonese S.;Deng M.;Cabbia M.;De Matos M.;Zimmer T.
DOI 10.23919/GEMIC.2019.8698153
2

Analysis of test structure design induced variation in on si On-wafer TRL Calibration in sub-THz

Open Access
Conference Paper
Year: 2019. Volume: 2019-March , Pages: 132-136 .
Authors: Yadav C.;Fregonese S.;Deng M.;Cabbia M.;De Matos M.;Jaoul M.;Zimmer T.
DOI 10.1109/ICMTS.2019.8730962
2

Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

Open Access
Article
IEEE Transactions on Terahertz Science and Technology. Year: 2019. Volume: 9 , Issue: 1 , Pages: 89-97 .
Authors: Fregonese S.;Deng M.;De Matos M.;Yadav C.;Joly S.;Plano B.;Raya C.;Ardouin B.;Zimmer T.
DOI 10.1109/TTHZ.2018.2884612
47

Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range

Open Access
Conference Paper
Year: 2018. Pages: 21-24 .
Authors: Yadav C.;Deng M.;Fregonese S.;Dematos M.;Plano B.;Zimmer T.
DOI 10.23919/EuMC.2018.8541392
13

Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range

Open Access
Conference Paper
Year: 2018. Volume: 2018-March , Pages: 197-201 .
Authors: Yadav C.;Deng M.;De Matos M.;Fregonese S.;Zimmer T.
DOI 10.1109/ICMTS.2018.8383798
6