Ministry of Education
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Prof Abhinav Kranti

vidwan id: 49414
Male

Professor, Department of Electrical Engineering
Indian Institute of Technology Indore

Orchid Icon 0000-0003-1760-3409 Google Scholar Icon 6701717892

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 198
Books 0
Proceedings 0

Publications

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Scopus

Citations 3831
h-index 34

CrossRef

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Citations 3272
h-index 30
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Professional Recognition

2001

Senior Research Fellowship

Council of Scientific and Industrial Research (CSIR), India

Community & Membership

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Bio

Solid-State Devices, Circuit Design and Nanotechnology Semiconductor Devices: Physics, Simulation and Modeling Novel MOS devices (single and multi-gate) in Bulk/SOI technology

Personal Details

  • Male
  • Professor , Indian Institute of Technology Indore
  • Flat No. 303, GIRNAR JI Apartments, A-318, Silicon City, Silicon City
PhD
Other Institute 2001
Professor Dec 2017 – Present
Indian Institute of Technology Indore | Department of Electrical Engineering
Associate Professor Nov 2010 – Dec 2017
Indian Institute of Technology Indore | Department of Electrical Engineering

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Scholarly Work

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Scholarly Publications

Sensitivity analysis of steep subthreshold slope (S-slope) in Junctionless nanotransistors

Open Access
Conference Paper
Year: 2012.
Authors: Parihar M.S.;Ghosh D.;Armstrong G.A.;Yu R.;Razavi P.;Das S.;Ferain I.;Kranti A.
DOI 10.1109/NANO.2012.6322028
1

Low power nanoscale RF/analog MOSFETs

Open Access
Conference Paper
Year: 2012.
Authors: Ghosh D.;Parihar M.;Armstrong G.;Kranti A.
DOI 10.1109/NANO.2012.6321973

High-performance junctionless MOSFETs for ultralow-power analog/RF applications

Open Access
Article
IEEE Electron Device Letters. Year: 2012. Volume: 33 , Issue: 10 , Pages: 1477-1479 .
Authors: Ghosh D.;Parihar M.;Armstrong G.;Kranti A.
DOI 10.1109/LED.2012.2210535
105 106

Bipolar effects in unipolar junctionless transistors

Open Access
Article
Applied Physics Letters. Year: 2012. Volume: 101 , Issue: 9 .
Authors: Parihar M.S.;Ghosh D.;Armstrong G.A.;Yu R.;Razavi P.;Kranti A.
DOI 10.1063/1.4748909
39 43

Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2012. Volume: 59 , Issue: 9 , Pages: 2308-2313 .
Authors: Yu R.;Das S.;Ferain I.;Razavi P.;Shayesteh M.;Kranti A.;Duffy R.;Colinge J.P.
DOI 10.1109/TED.2012.2202239
30 33

Investigation of non-classical under lap design on linearity of a folded cascode operational transconductance amplifier (OTA)

Open Access
Conference Paper
AIP Conference Proceedings. Year: 2011. Volume: 1373 , Pages: 70-82 .
Authors: Alam M.S.;Kranti A.;Armstrong G.A.
DOI 10.1063/1.3627195
1 1

Analog operation temperature dependence of nMOS junctionless transistors focusing on harmonic distortion

Open Access
Article
Journal of Integrated Circuits and Systems. Year: 2011. Volume: 6 , Issue: 2 , Pages: 114-121 .
Authors: Doria R.T.;Pavanello M.A.;Trevisoli R.D.;de Souza M.;Lee C.W.;Ferain I.;Akhavan N.D.;Yan R.;Razavi P.;Yu R.;Kranti A.;Colinge J.P.
17

A simulation comparison between junctionless and inversion-mode MuGFETs

Open Access
Conference Paper
ECS Transactions. Year: 2011. Volume: 35 , Issue: 5 , Pages: 63-72 .
Authors: Colinge J.P.;Kranti A.;Yan R.;Ferain I.;Dehdashti Akhavan N.;Razavi P.;Lee C.W.;Yu R.;Colinge C.A.
DOI 10.1149/1.3570778
30 36