Dr Arabinda Barman

vidwan id: 488128

Male

0000-0002-3456-8513 Google Scholar Icon

mSgyvTEAAAAJ

Expertise

Condensed Matter Physics

Publications

Total Articles 25

Books 0

Proceedings 0

Publications

Scopus

Citations 336

h-index 9

CrossRef

Citations 252

h-index 8

Google Scholar

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Professional Recognition

2016

International Travel Support

Science and Engineering Research Board, India

2018

Dr. D. S. Kothary Postdoctoral Fellowship

UGC

2018

Institute Postdoctoral Fellowship

Indian Institute of Technology Delhi

Community & Membership

2022

UGC Sub committee Dinhata College

Co-ordinator

Materials Research Society, USA

2016

Subscribed Member

Bio

I am an experimental material science enthusiast. My research interest is on resistive random oxide based memory device, especially metal oxide based memory devices. Recently, I am working on perovskite based memory devices.

Personal Details

Male
Ward No. 1, College Para

Ph.D. in Physics

Other Institute 2017

Master of Science

Assam University 2010

Bachelor of Science (H)

University of North Bengal 2008

Assistant Professor Jan 2020 – —

DINHATA COLLEGE, COOCHBEHAR

Post-Doctoral Fellow Oct 2018 – Dec 2019

Indian Institute of Technology Delhi | Nano Scale Research Facility

Scientific Officer SC Feb 2018 – Oct 2018

Shiv Nadar University, Gautam Buddha Nagar | Department of Physics, School of Natural Sciences

Project Associate Oct 2010 – Dec 2012

Indian Institute of Technology Kanpur | Department of Materials Science and Engineering

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Mr Boyella Sreenivasa Reddy

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Mr Aman Kumar

Assistant Professor

Dr Manish Kumar Vishwakarma

Assistant Professor

Dr Monika DL

Assistant Professor

Usha S

Assistant Professor

Dr Prashant Athmakoori

Assistant Professor

Dr Krishna Chandra Mishra

Assistant Professor

Ms Sudipta Chakrabarty

Assistant Professor

Dr Eena Bahan

Assistant Professor

Ms Sunita Loohach

Assistant Professor

Organisation (0)

Co-Authors (21)

Dr Anjan Barman

S N Bose national centre for basic sciences

Prof Abhinav Kranti

Indian Institute of Technology Indore

Prof ANIL SINHA

University of Petroleum and Energy Studies, Dehradun

Prof Arvind Kumar

Banaras Hindu University

Dr Ashis Kr Manna

Madanapalle Institute of Technology & Science, Madanapalle

Dr Asim Roy

National Institute of Technology Silchar

Dr Biswarup Satpati

Saha Institute of Nuclear Physics

Dr Chinmoy Chattopadhyay

National Institute of Advanced Manufacturing Technology (NIAMT) (formerly National Institute of Foundry & Forge Technology)

Dr Dinakar Kanjilal

Inter-University Accelerator Centre

Prof Kallol Mondal

Indian Institute of Technology Kanpur

Dr Mukul Gupta

UGC-DAE Consortium for Scientific Research

Dr Niharendu Barman

DINHATA COLLEGE, COOCHBEHAR

Dr Pranab Kumar Sarkar

Assam University

Dr Pratap Kumar Sahoo

National Institute of Science Education and Research

Prof Sandeep Sangal

Indian Institute of Technology Kanpur

Dr Shikha Varma

Institute of Physics (IOP),Bhubaneswar

Dr Abubakkar Siddik

A B N Seal College, Coochbehar

Dr Anil Kumar Sinha

Central Road Research Institute

Prof Swapan Kumar Pradhan

The University of Burdwan

Dr Tapobrata Som

Institute of Physics (IOP),Bhubaneswar

Dr Vivek Garg

S.V. National Institute of Technology

Scholarly Work

Investigation of Resistive Switching Behavior of Lead Free RbSnX3 (X=I, Cl, Br)

Funding Agency: Science and Engineering Research Board, India

Principal Investigator

1,830,000

2021 - Ongoing

Ongoing

No Data Found

There is currently nothing to display here.

No Data Found

There is currently nothing to display here.

Scholarly Publications

Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study

Open Access

Article

Year: 2022. Volume: 14 , Issue: 30 , Pages: 34822-34834 .

Authors: Barman A.;Das D.;Deshmukh S.;Sarkar P.K.;Banerjee D.;Hübner R.;Gupta M.;Saini C.P.;Kumar S.;Johari P.;Dhar S.;Kanjilal A.

10.1021/acsami.2c05089

Thermoelectric properties of Rashba compounds KSnX (X = Sb, Bi)

Open Access

journal-article

Journal of Applied Physics. Year: 2022.

Authors:

10.1063/5.0101083

First-principles study of anisotropic thermoelectric properties of hexagonal KBaBi

Open Access

journal-article

Journal of Solid State Chemistry. Year: 2021.

Authors:

10.1016/j.jssc.2021.121961

Metal-induced progressive alteration of conducting states in memristors for implementing an efficient analog memory: a DFT-supported experimental approach

Open Access

Article

Journal of Materials Chemistry C. Year: 2021. Volume: 9 , Issue: 9 , Pages: 3136-3144 .

Authors: Das D.;Barman A.;Sarkar P.K.;Rajput P.;Jha S.N.;Hübner R.;Kanjilal D.;Johari P.;Kanjilal A.

10.1039/d0tc04918b

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

Open Access

Article

Year: 2021. Volume: 13 , Issue: 19 , Pages: 8864-8874 .

Authors: Siddik A.;Haldar P.K.;Paul T.;Das U.;Barman A.;Roy A.;Sarkar P.K.

10.1039/d0nr08214g

Aliovalent Doping Engineered Ti1-XTaxO2 Layer for Ultra-Low Power Resistive Memory Devices

Open Access

journal-article

Year: 2020.

Authors:

10.1149/ma2020-01151024mtgabs

Resistive switching in reactive electrode-based memristor: Engineering bulk defects and interface inhomogeneity through bias characteristics

Open Access

Article

Year: 2019. Volume: 34 , Issue: 3 .

Authors: Kumar A.;Das M.;Sharma P.;Garg V.;Sengar B.S.;Barman A.;Kanjilal A.;Kranti A.;Mukherjee S.

10.1088/1361-6641/aafc8a

The effect of Ti+ ion implantation on the anatase-rutile phase transformation and resistive switching properties of TiO 2 thin films

Open Access

Article

Journal of Applied Physics. Year: 2018. Volume: 124 , Issue: 15 .

Authors: Manna A.;Barman A.;Joshi S.R.;Satpati B.;Dash P.;Chattaraj A.;Srivastava S.K.;Sahoo P.K.;Kanjilal A.;Kanjilal D.;Varma S.

10.1063/1.5045550

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Showing 1 to 8 of 25 results

Dr Arabinda Barman

Expertise

Publications

Publications

Scopus

CrossRef

Google Scholar

Professional Recognition

International Travel Support

Dr. D. S. Kothary Postdoctoral Fellowship

Institute Postdoctoral Fellowship

Community & Membership

Bio

Personal Details

Related Profiles

Experts (2495+)

Organisation (0)

Co-Authors (21)

Scholarly Work

Investigation of Resistive Switching Behavior of Lead Free RbSnX3 (X=I, Cl, Br)

No Data Found

No Data Found

Scholarly Publications

Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study

Thermoelectric properties of Rashba compounds KSnX (X = Sb, Bi)

First-principles study of anisotropic thermoelectric properties of hexagonal KBaBi

Metal-induced progressive alteration of conducting states in memristors for implementing an efficient analog memory: a DFT-supported experimental approach

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

Aliovalent Doping Engineered Ti<sub>1-X</sub>Ta<sub>x</sub>O<sub>2</sub> Layer for Ultra-Low Power Resistive Memory Devices

Resistive switching in reactive electrode-based memristor: Engineering bulk defects and interface inhomogeneity through bias characteristics

The effect of Ti<sup>+</sup> ion implantation on the anatase-rutile phase transformation and resistive switching properties of TiO 2 thin films