Prof Abhinav Kranti
vidwan id: 49414
Professor, Department of Electrical Engineering
Indian Institute of Technology Indore
Expertise
- Electrical and Electronic Engineering
Publications
Publications
No publication activity to display at the moment.
Scopus
h-index
34
CrossRef
Citations
3272
h-index
30
Google Scholar
Loading Scholar statistics...
Professional Recognition
Senior Research Fellowship
Council of Scientific and Industrial Research (CSIR), IndiaCommunity & Membership
No Data Found
There is currently nothing to display here.
No Data Found
There is currently nothing to display here.
Bio
Solid-State Devices, Circuit Design and Nanotechnology Semiconductor Devices: Physics, Simulation and Modeling Novel MOS devices (single and multi-gate) in Bulk/SOI technology
Personal Details
- Male
- Professor , Indian Institute of Technology Indore
- Flat No. 303, GIRNAR JI Apartments, A-318, Silicon City, Silicon City
Related Profiles
Experts (19623+)
View All
Assistant Professor
Assistant Professor
N/A
Assistant Professor
Assistant Professor
Doctor
Assistant Professor (Grade-I)
Assistant Professor
Research Scholar
Junior Research Fellow
Organisations (227+)
View All
Associate Professor
Assistant Professor
Assistant Professor (Grade-I)
Assistant Professor (Grade-II)
Assistant Professor
Professor
Professor
Assistant Professor (Grade-II)
Assistant Professor
Professor
Co-Authors (10)
Banaras Hindu University
National Institute of Technology Calicut
National Institute of Technology Kurukshetra
National Institute of Technology Kurukshetra
Birla Institute of Technology and Science
University of Delhi
Shiv Nadar University, Gautam Buddha Nagar
Indian Institute of Technology Delhi
S.V. National Institute of Technology
Scholarly Work
No Data Found
There is currently nothing to display here.
No Data Found
There is currently nothing to display here.
No Data Found
There is currently nothing to display here.
Scholarly Publications
Extraction and Analysis of Mobility in Double Gate Junctionless Transistor
Open AccessSuppressing Single Transistor Latch Effect in Energy Efficient Steep Switching Junctionless MOSFETs
Open AccessRetention and Scalability Perspective of Sub-100-nm Double Gate Tunnel FET DRAM
Open Access
10.1109/TED.2017.2662703
35
40
Variation of Threshold Voltage with Temperature in Impact Ionization-Induced Steep Switching Si and Ge Junctionless MOSFETs
Open AccessInsights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application
Open AccessAnalytical Model for 2DEG Density in Graded MgZnO/ZnO Heterostructures with Cap Layer
Open Access
10.1109/TED.2017.2721437
30
27