Ministry of Education
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Dr Sayak Dutta Gupta

vidwan id: 484939
Male

Assistant Professor, Department of Electrical Engineering
Indian Institute of Technology Madras

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Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 29
Books 0
Proceedings 0

Publications

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Scopus

Citations 211
h-index 8

CrossRef

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Citations 158
h-index 7
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Professional Recognition

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Community & Membership

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Bio

Device Design, Technology Development, Device Modelling and Reliability Physics Investigations of next-generation and future semiconductor devices, like

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Madras
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Assistant Professor Nov 2023 – Present
Indian Institute of Technology Madras | Department of Electrical Engineering

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Dr Mayank Shrivastava

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Scholarly Work

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Scholarly Publications

Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs under Fast Cyclic Transient Stress

Open Access
Article
IEEE Transactions on Device and Materials Reliability. Year: 2020. Volume: 20 , Issue: 3 , Pages: 562-569 .
Authors: Shankar B.;Shikha S.;Singh A.;Kumar J.;Soni A.;Dutta Gupta S.;Raghavan S.;Shrivastava M.
DOI 10.1109/TDMR.2020.3007128
7 7

On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs

Open Access
Conference Paper
Year: 2020. Volume: 2020-April .
Authors: Gupta S.D.;Joshi V.;Chaudhuri R.R.;Kr Singh A.;Guha S.;Shrivastava M.
DOI 10.1109/IRPS45951.2020.9128226
3 3

Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure

Open Access
Conference Paper
Year: 2020. Volume: 2020-September , Pages: 341-344 .
Authors: Chaudhuri R.R.;Joshi V.;Gupta S.D.;Shrivastava M.
DOI 10.1109/ISPSD46842.2020.9170160
1 3

Esd behavior of algan/gan schottky diodes

Open Access
Article
IEEE Transactions on Device and Materials Reliability. Year: 2019. Volume: 19 , Issue: 2 , Pages: 437-444 .
Authors: Shankar B.;Gupta S.D.;Soni A.;Raghavan S.;Shrivastava M.
DOI 10.1109/TDMR.2019.2916846
8 9

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities

Open Access
Conference Paper
Year: 2019. Volume: 2019-March .
Authors: Dutta Gupta S.;Joshi V.;Shankar B.;Shikha S.;Raghavan S.;Shrivastava M.
DOI 10.1109/IRPS.2019.8720595
2 3

Trap assisted stress induced ESD reliability of GaN schottky diodes

Open Access
Conference Paper
Year: 2018. Volume: 2018-September .
Authors: Shankar B.;Singh R.;Sengupta R.;Khand H.;Soni A.;Gupta S.D.;Raghavan S.;Gossner H.;Shrivastava M.
5

On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs

Open Access
Conference Paper
Year: 2018. Volume: 2018-March , Pages: 4E.41-4E.45 .
Authors: Shankar B.;Soni A.;Gupta S.D.;Sengupta R.;Khand H.;Mohan N.;Raghavan S.;Shrivastava M.
DOI 10.1109/IRPS.2018.8353596
9 12

Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs

Open Access
Conference Paper
Year: 2018. Volume: 2018-March , Pages: 4E.31-4E.34 .
Authors: Shankar B.;Soni A.;Gupta S.D.;Shrivastava M.
DOI 10.1109/IRPS.2018.8353595
5 5