Ministry of Education
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Dr Jeevesh Kumar

vidwan id: 451196
Male

Assistant Professor, Department of Electronics Engineering
Indian Institute of Technology (Indian School of Mines), Dhanbad

Orchid Icon 0000-0001-6178-8434 Google Scholar Icon 51564048500 Researcher Icon CAI-0490-2022 Google Scholar Icon x7gBoTkAAAAJ

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 38
Books 0
Proceedings 0

Publications

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Scopus

Citations 215
h-index 9

CrossRef

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Citations 204
h-index 9
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Professional Recognition

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Bio

Atomic-level investigations of 2D materials, especially graphene, phosphorene, and transition metal dichalcogenides (TMDs)

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology (Indian School of Mines), Dhanbad
  • IIT (ISM) Dhanbad
Ph.D
Other Institute 2022
Assistant Professor Nov 2023 – Present
Indian Institute of Technology (Indian School of Mines), Dhanbad | Department of Electronics Engineering

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Co-Authors (3)

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Dr Mayank Shrivastava

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Scholarly Work

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Scholarly Publications

Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2025. Volume: 13 , Pages: 930-936 .
Authors: Dar A.B.;Meersha A.;Amogh K.M.;Shah A.A.;Rai A.K.;Verma R.;Patbhaje U.;Kumar J.;Shrivastava M.
DOI 10.1109/JEDS.2025.3591152

Unveiling inverse piezoelectricity and field induced nonvolatile strain in 2D TMDs

Open Access
Article
npj 2D Materials and Applications. Year: 2025. Volume: 9 , Issue: 1 .
Authors: Patbhaje U.;Verma R.;Kumar J.;Ansh A.;Shrivastava M.
DOI 10.1038/s41699-025-00564-2

Reconfiguration of Intrinsic Depletion-Mode Characteristics of MoS2 Field-Effect Transistors to High-Performance Enhancement-Mode Operation Using an Argon Plasma-Induced p-Type Doping Technique

Open Access
Article
SMALL METHODS. Year: 2025. Volume: 9 , Issue: 3 .
Authors: Rai A.K.;Shah A.A.;Dar A.B.;Kumar J.;Shrivastava M.
DOI 10.1002/smtd.202401001
1

Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2024. Volume: 12 , Pages: 46-50 .
Authors: Hemanjaneyulu K.;Kumar J.;Patbhaje U.;Shrivastava M.
DOI 10.1109/JEDS.2023.3345020
1 1

MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation

Open Access
Article
ACS Nano. Year: 2024. Volume: 18 , Issue: 8 , Pages: 6215-6228 .
Authors: Rai A.K.;Shah A.A.;Kumar J.;Chattaraj S.;Dar A.B.;Patbhaje U.;Shrivastava M.
DOI 10.1021/acsnano.3c09428
6 6

Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs

Open Access
Conference Paper
Year: 2024.
Authors: Verma R.;Patbhaje U.;Shah A.A.;Kumar J.;Chaudhuri R.R.;Dar A.B.;Shrivastava M.
DOI 10.1109/IRPS48228.2024.10529469

Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2FETs

Open Access
Conference Paper
Year: 2024.
Authors: Patbhaje U.;Verma R.;Kumar J.;Dar A.B.;Shrivastava M.
DOI 10.1109/IRPS48228.2024.10529415
1 2

Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders

Open Access
Conference Paper
Year: 2024.
Authors: Kumar J.;Dar A.B.;Shah A.A.;Amogh K.M.;Chattaraj S.;Patbhaje U.;Rai A.K.;Verma R.;Shrivastava M.
DOI 10.1109/IRPS48228.2024.10529372
1