Ministry of Education
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Dr Jeevesh Kumar

vidwan id: 451196
Male

Assistant Professor, Department of Electronics Engineering
Indian Institute of Technology (Indian School of Mines), Dhanbad

Orchid Icon 0000-0001-6178-8434 Google Scholar Icon 51564048500 Researcher Icon CAI-0490-2022 Google Scholar Icon x7gBoTkAAAAJ

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 38
Books 0
Proceedings 0

Publications

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Scopus

Citations 215
h-index 9

CrossRef

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Citations 204
h-index 9
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Bio

Atomic-level investigations of 2D materials, especially graphene, phosphorene, and transition metal dichalcogenides (TMDs)

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology (Indian School of Mines), Dhanbad
  • IIT (ISM) Dhanbad
Ph.D
Other Institute 2022
Assistant Professor Nov 2023 – Present
Indian Institute of Technology (Indian School of Mines), Dhanbad | Department of Electronics Engineering

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Co-Authors (3)

Mayank

Dr Mayank Shrivastava

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Scholarly Work

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Scholarly Publications

Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices

Open Access
Article
IEEE Electron Device Letters. Year: 2023. Volume: 44 , Issue: 4 , Pages: 666-669 .
Authors: Meersha A.;Kumar J.;Mishra A.;Variar H.B.;Shrivastava M.
DOI 10.1109/LED.2023.3250329

Breathing Mode's Temperature Coefficient Estimation and Interlayer Phonon Scattering Model of Few-Layer Phosphorene

Open Access
Article
ACS Omega. Year: 2022. Volume: 7 , Issue: 48 , Pages: 43462-43467 .
Authors: Kumar J.;Patbhaje U.;Shrivastava M.
DOI 10.1021/acsomega.2c03759
2 2

Unveiling Additional Ambient Degradation Issues of Phosphorene FETs Under Laser Exposure and Positive Gate Bias

Open Access
Conference Paper
Year: 2022.
Authors: Kumar J.;Patbhaje U.;Shrivastava M.
DOI 10.1109/ICEE56203.2022.10118342

Are Argon and Nitrogen Gases Really Inert to Graphene Devices?

Open Access
Conference Paper
Year: 2022. Volume: 2022-June .
Authors: Kumar J.;Shrivastava M.
DOI 10.1109/DRC55272.2022.9855822

Role of Channel Inversion in Ambient Degradation of Phosphorene FETs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 6 , Pages: 3353-3358 .
Authors: Kumar J.;Patbhaje U.;Shrivastava M.
DOI 10.1109/TED.2022.3171504
1

Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 4 , Pages: 2066-2073 .
Authors: Kumar J.;Meersha A.;Variar H.B.;Mishra A.;Shrivastava M.
DOI 10.1109/TED.2022.3151033
7 8

Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 4 , Pages: 1956-1963 .
Authors: Hemanjaneyulu K.;Meersha A.;Kumar J.;Shrivastava M.
DOI 10.1109/TED.2022.3152459
6 6

Gaps in the Y-Function Method for Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs

Open Access
Article
IEEE Electron Device Letters. Year: 2022. Volume: 43 , Issue: 4 , Pages: 635-638 .
Authors: Hemanjaneyulu K.;Kumar J.;Shrivastava M.
DOI 10.1109/LED.2022.3149410
3 4