Ministry of Education
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Dr Sayak Dutta Gupta

vidwan id: 484939
Male

Assistant Professor, Department of Electrical Engineering
Indian Institute of Technology Madras

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Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 29
Books 0
Proceedings 0

Publications

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Scopus

Citations 211
h-index 8

CrossRef

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Citations 158
h-index 7
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Professional Recognition

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Bio

Device Design, Technology Development, Device Modelling and Reliability Physics Investigations of next-generation and future semiconductor devices, like

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Madras
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Assistant Professor Nov 2023 – Present
Indian Institute of Technology Madras | Department of Electrical Engineering

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Scholarly Work

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Scholarly Publications

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer

Open Access
Conference Paper
Year: 2023. Volume: 2023-March .
Authors: Joshi V.;Gupta S.D.;Chaudhuri R.R.;Shrivastava M.
DOI 10.1109/IRPS48203.2023.10118195

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic RONBehavior in AlGaN/GaN HEMTs - Part II

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2023. Volume: 70 , Issue: 12 , Pages: 6183-6189 .
Authors: Chaudhuri R.R.;Gupta A.;Joshi V.;Malik R.R.;Gupta S.D.;Shrivastava M.
DOI 10.1109/TED.2023.3300652
4 5

Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2023. Volume: 70 , Issue: 12 , Pages: 6465-6472 .
Authors: Joshi V.;Chaudhuri R.R.;Gupta S.D.;Shrivastava M.
DOI 10.1109/TED.2023.3321281

Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2023. Volume: 70 , Issue: 12 , Pages: 6211-6216 .
Authors: Malik R.R.;Joshi V.;Chaudhuri R.R.;Gupta S.D.;Shrivastava M.
DOI 10.1109/TED.2023.3321864
4 5

Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Ron Behavior in AlGaN/GaN HEMTs—Part I

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2023. Volume: 70 , Issue: 12 , Pages: 6175-6182 .
Authors: Chaudhuri R.R.;Gupta A.;Joshi V.;Malik R.R.;Gupta S.D.;Shrivastava M.
DOI 10.1109/TED.2023.3323439
1 2

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences

Open Access
Conference Paper
Year: 2023. Volume: 2023-March .
Authors: Chaudhuri R.R.;Joshi V.;Gupta A.;Joshi T.;Malik R.R.;Mir M.A.;Gupta S.D.;Shrivastava M.
DOI 10.1109/IRPS48203.2023.10118255
1 2

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RONof AlGaN/GaN HEMTs under Semi-on State

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 12 , Pages: 6934-6939 .
Authors: Dutta Gupta S.;Joshi V.;Chaudhuri R.R.;Shrivastava M.
DOI 10.1109/TED.2022.3212327
5 7

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control over the 2-DEG

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 3 , Pages: 1608-1611 .
Authors: Dutta Gupta S.;Joshi V.;Chaudhuri R.R.;Shrivastava M.
DOI 10.1109/TED.2022.3144378
6 6