Ministry of Education
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Prof Harsupreet Kaur

vidwan id: 283469
Female

Associate Professor, Department of Electronic Science
University of Delhi

Google Scholar Icon 13205623400

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 112
Books 0
Proceedings 0

Publications

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Scopus

Citations 445
h-index 12

CrossRef

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Citations 349
h-index 10
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Professional Recognition

2008

Young Scientist Award

International Union of Radio Science (Union Radio-Scientifique Internationale)

Community & Membership

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IEEE EDS Delhi Chapter

2019
EXCOM member

IEEE EDS Delhi Chapter

2019
Secretary

IEEE USA

2018
Senior member

Semiconductor Society of India

2013
Life member

Electronic Devices Society, USA

2012
Senior member

Bio

Electrical and Electronic Engineering

Personal Details

  • Female
  • Associate Professor , University of Delhi
  • University of Delhi, Benito Juarez Marg, South Campus, South Moti Bagh
Ph.D
University of Delhi 2009
Associate Professor Apr 2013 – Present
University of Delhi | Department of Electronic Science

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Scholarly Work

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Scholarly Publications

A Comparative Analysis Using Modeling and Simulation to Study the Impact of Multilayered Gate Dielectric (MGD) Design on Device Performance of Surrounding Gate MOSFET

Open Access
article
Year: 2008.
Authors: Kaur, Harsupreet and Kabra, Sneha and Haldar, Subhasis and Gupta, RS

Impact of laterally asymmetric channel and gate stack design on device performance of surrounding gate MOSFETs: A modeling and simulation study

Open Access
inproceedings
Year: 2008. Pages: 1--4 .
Authors: Kaur, Harsupreet and Kabra, Sneha and Haldar, Subhasis and Gupta, RS

An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET

Open Access
Article
Year: 2008. Volume: 52 , Issue: 2 , Pages: 305-311 .
Authors: Kaur H.;Kabra S.;Haldar S.;Gupta R.S.
DOI 10.1016/j.sse.2007.09.006
25 29

Impact of laterally asymmetric channel and gate stack design on device performance of surrounding gate MOSFETs : A modeling and simulation study

Open Access
Conference Paper
Year: 2008.
Authors: Kaur H.;Kabra S.;Haldar S.;Gupta R.S.
DOI 10.1109/APMC.2008.4958641
1 2

An analytical model for admittance parameters of GaN MESFET for microwave circuit applications

Open Access
Conference Paper
Year: 2007. Pages: 456-458 .
Authors: Kabra S.;Kaur H.;Haldar S.;Gupta M.;Gupta R.S.
DOI 10.1109/IWPSD.2007.4472548

Semiempirical model for admittance and scattering parameters of GaN mesfet for microwave circuit applications

Open Access
Article
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. Year: 2007. Volume: 49 , Issue: 10 , Pages: 2446-2450 .
Authors: Kabra S.;Kaur H.;Haldar S.;Gupta M.;Gupta R.S.
DOI 10.1002/mop.22744
1 1

Two-dimensional subthreshold analysis of sub-micron GaN MESFET

Open Access
Article
Microelectronics Journal. Year: 2007. Volume: 38 , Issue: 4-5 , Pages: 547-555 .
Authors: Kabra S.;Kaur H.;Haldar S.;Gupta M.;Gupta R.S.
DOI 10.1016/j.mejo.2007.03.006
12 16

Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability

Open Access
Article
Year: 2007. Volume: 51 , Issue: 3 , Pages: 398-404 .
Authors: Kaur H.;Kabra S.;Bindra S.;Haldar S.;Gupta R.S.
DOI 10.1016/j.sse.2007.01.025
39 45