Ministry of Education
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Prof Harsupreet Kaur

vidwan id: 283469
Female

Associate Professor, Department of Electronic Science
University of Delhi

Google Scholar Icon 13205623400

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 112
Books 0
Proceedings 0

Publications

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Scopus

Citations 445
h-index 12

CrossRef

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Citations 349
h-index 10
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Professional Recognition

2008

Young Scientist Award

International Union of Radio Science (Union Radio-Scientifique Internationale)

Community & Membership

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IEEE EDS Delhi Chapter

2019
EXCOM member

IEEE EDS Delhi Chapter

2019
Secretary

IEEE USA

2018
Senior member

Semiconductor Society of India

2013
Life member

Electronic Devices Society, USA

2012
Senior member

Bio

Electrical and Electronic Engineering

Personal Details

  • Female
  • Associate Professor , University of Delhi
  • University of Delhi, Benito Juarez Marg, South Campus, South Moti Bagh
Ph.D
University of Delhi 2009
Associate Professor Apr 2013 – Present
University of Delhi | Department of Electronic Science

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Scholarly Work

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Scholarly Publications

Assessing the impact of step gate oxide and gate electrode engineering on performance of β-Ga2O3 MOSFET for high frequency applications

Open Access
Article
Micro and Nanostructures. Year: 2023. Volume: 180 .
Authors: Goyal P.;Kaur H.
DOI 10.1016/j.micrna.2023.207603
1 1

Implementation of Step-Hetero-Oxide & Dual Material Gate Designs on Lateral β-Ga2O3MOSFET for Terahertz Applications

Open Access
Conference Paper
Year: 2023.
Authors: Goyal P.;Kaur H.
DOI 10.1109/LAEDC58183.2023.10209134

TCAD Investigation of Step-Oxide and Asymmetric Doping Design with Electrode Engineering on Lateral β-Ga2O3MOSFET for Terahertz Applications

Open Access
Conference Paper
Year: 2023.
Authors: Goyal P.;Kaur H.
DOI 10.1109/LAEDC58183.2023.10209136

Exploring the efficacy of implementing field plate design with air gap on β-Ga2O3 MOSFET for high power & RF applications

Open Access
Article
Micro and Nanostructures. Year: 2023. Volume: 173 .
Authors: Goyal P.;Kaur H.
DOI 10.1016/j.micrna.2022.207454
4 6

Impact of Dual Material Gate Design on Recessed Gate β - Ga2O3 MOSFET for High Frequency Applications

Open Access
Conference Paper
Year: 2023. Pages: 218-221 .
Authors: Goyal P.;Kaur H.
DOI 10.1109/WIECON-ECE60392.2023.10456442
1

Performance investigation of Reconfigurable--FET under the influence of parameter variability of ferroelectric gate stack at high temperatures

Open Access
article
Microelectronics Journal. Year: 2022. Volume: 124 , Pages: 105442 .
Authors: Pandey, Priyanka and Kaur, Harsupreet

Impact of Mole Fraction Variation on the pH Sensing Performance of SiGe channel based Polarity Controllable Ion Sensitive FET - Part-I

Open Access
Conference Paper
Year: 2022.
Authors: Pandey P.;Kaur H.
DOI 10.1109/I2CT54291.2022.9824400

Implementing variable doping and work function engineering in β-Ga2O3MOSFET to realize high breakdown voltage and PfoM

Open Access
Article
Year: 2022. Volume: 37 , Issue: 4 .
Authors: Goyal P.;Kaur H.
DOI 10.1088/1361-6641/ac5843
10 12