Ministry of Education
Vidvan Image

Dr Vrajesh Maheta

vidwan id: 617202
Male

Associate Professor,
University of Mumbai

Orchid Icon 0000-0003-3206-7878 Google Scholar Icon 23668280000 Google Scholar Icon XflT0IsAAAAJ

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 25
Books 0
Proceedings 0

Publications

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Scopus

Citations 291
h-index 8

CrossRef

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Citations 190
h-index 8
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Professional Recognition

2016

Region 8 Exemplary Student Branch Award under my mentorship as a Student Branch counsellor

IEEE

Community & Membership

2025

International Conference on Engineering Research and Innovations

Co-chair
2025

International Conference on Engineering Research and Innovations

Co-chair

Indian Society for Technical Education

Life Member

Bio

CMOS Device Reliability, Device Characterization, SOPC Design

Personal Details

  • Male
  • Associate Professor , University of Mumbai
  • Sector-22, Mumbai
PhD
Other Institute 2009
ME
Other Institute 2003
BE
Other Institute 1997
Associate Professor Jan 2019 – Present
University of Mumbai

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Co-Authors (2)

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Scholarly Work

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Scholarly Publications

The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique

Open Access
Conference Paper
Year: 2008.
Authors: Maheta V.D.;Olsen C.;Ahmed K.;Mahapatra S.
DOI 10.1109/IPFA.2008.4588198
1 1

A comprehensive study of flicker noise in plasma itrided SiON p-MOSFETs: Process dependence of pre-xisting and NBTI stress generated trap distribution profiles

Open Access
Conference Paper
Year: 2008.
Authors: Kapila G.;Goyal N.;Maheta V.;Olsen C.;Ahmed K.;Mahapatra S.
DOI 10.1109/IEDM.2008.4796625
26 37

Development of an Ultrafast On-the-Fly $I_\rm DLIN$ Technique to Study NBTI in Plasma and Thermal Oxynitride p-MOSFETs

Open Access
ARTICLE
IEEE Transactions on Electron Devices. Year: 2008. Volume: 55 , Pages: 2614-2622 .
Authors: Maheta, Vrajesh D. and Kumar, E. Naresh and Purawat, Shweta and Olsen, Christopher and Ahmed, Khaled and Mahapatra, Souvik
DOI 10.1109/TED.2008.2003224

The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_\rm DLIN$ Technique

Open Access
ARTICLE
IEEE Transactions on Electron Devices. Year: 2008. Volume: 55 , Pages: 1630-1638 .
Authors: Maheta, Vrajesh D. and Olsen, Christopher and Ahmed, Khaled and Mahapatra, Souvik
DOI 10.1109/TED.2008.923524

Gate insulator process dependent NBTI in SiON p-MOSFETs

Open Access
Conference Paper
Year: 2008. Pages: 616-619 .
Authors: Mahapatra S.;Maheta V.
DOI 10.1109/ICSICT.2008.4734620
1

Comparison of negative bias temperature instability in HfSiO(N)/TaN and SiO(N)/poly-Si pMOSFETs

Open Access
conference-paper
Year: 2007. Pages: 91-95 .
Authors: Maheta, V.D.;Purawat, S.;Gupta, G.
DOI 10.1109/IPFA.2007.4378064

Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I DLIN technique

Open Access
Conference Paper
Year: 2007. Pages: 809-812 .
Authors: Kumar E.N.;Maheta V.D.;Purawat S.;Islam A.E.;Olsen C.;Ahmed K.;Alam M.A.;Mahapatra S.
DOI 10.1109/IEDM.2007.4419071
20 55

Theory and Practice of On-the-fly and Ultra-fast VT Measurements for NBTI Degradation: Challenges and Opportunities

Open Access
INPROCEEDINGS
Year: 2007. Pages: 805-808 .
Authors: Islam, A.E. and Kumar, E. N. and Das, H. and Purawat, S. and Maheta, V. and Aono, H. and Murakami, E. and Mahapatra, S. and Alam, M.A.
DOI 10.1109/IEDM.2007.4419070