Ministry of Education
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Dr Gopi Krishna Saramekala

vidwan id: 603421
Male

Assistant Professor (Grade-I), Department of Electronics and Communication Engineering
National Institute of Technology Calicut

Google Scholar Icon 55777259100

Expertise

  • Telecommunications

Publications

Total Articles 31
Books 0
Proceedings 0

Publications

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Scopus

Citations 206
h-index 8

CrossRef

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Citations 116
h-index 5
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Professional Recognition

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Bio

Electronics and Communication Engineering

Personal Details

  • Male
  • Assistant Professor (Grade-I) , National Institute of Technology Calicut
  • Department of Electronics and Communication Engineering, National Institute of Technology, Calicut
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Assistant Professor (Grade-I) May 2018 – Present
National Institute of Technology Calicut | Department of Electronics and Communication Engineering

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Co-Authors (12)

Chandan

Dr Chandan Yadav

Indian Institute of Technology Jammu

K J

Mr K J Dhanaraj

National Institute of Technology Calicut

Mirgender

Dr Mirgender Kumar

Chandigarh Group of Colleges, Jhanjeri

Kamalakanta

Prof Kamalakanta Mahapatra

National Institute of Technology Rourkela

N.Bheema

Prof N.Bheema Rao

National Institute of Technology Warangal

Pramod Kumar

Dr Pramod Kumar Tiwari

Indian Institute of Technology Patna

Sarvesh

Dr Sarvesh Dubey

Babasaheb Bhimrao Ambedkar Bihar University, Muzaffarpur

Satyabrata

Prof Satyabrata Jit

Indian Institute of Technology (BHU), Varanasi

D

Dr D Srikar

Chaitanya Bharathi Institute of Technology, Hyderabad

Suddapalli

Dr Suddapalli Subba Rao

Indian Institute of Information Technology Design And Manufacturing, Kurnool

Ayas Kanta

Prof Ayas Kanta Swain

National Institute of Technology Rourkela

Pramod Kumar

Prof Pramod Kumar Tiwari

National Institute of Technology Rourkela

Scholarly Work

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Scholarly Publications

ATLAS™ based simulation study of the electrical characteristics of dual-metal-gate (DMG) fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs

Open Access
Conference Paper
Year: 2014.
Authors: Saramekala G.;Jit S.;Tiwari P.
DOI 10.1109/ICAEE.2014.6838458
1 2

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon - Germanium substrates

Open Access
Article
Journal of Semiconductors. Year: 2014. Volume: 35 , Issue: 10 .
Authors: Tiwari P.K.;Saramekala G.K.;Dubey S.;Mukhopadhyay A.K.
DOI 10.1088/1674-4926/35/10/104002
11 13

Analog and radio-frequency (RF) performance evaluation of fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs

Open Access
Article
Superlattices and Microstructures. Year: 2014. Volume: 76 , Pages: 77-89 .
Authors: Saramekala G.K.;Dubey S.;Tiwari P.K.
DOI 10.1016/j.spmi.2014.10.005
6 8

A two-dimensional subthreshold current model of recessed-source/drain (Re-S/D) SOI MOSFETs with high-k dielectric

Open Access
Conference Paper
Year: 2014. Pages: 258-263 .
Authors: Saramekala G.;Tiwari P.
DOI 10.1109/AMS.2014.58
1 2

Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs

Open Access
Article
Journal of Computational Electronics. Year: 2014. Volume: 13 , Issue: 2 , Pages: 467-476 .
Authors: Saramekala G.K.;Santra A.;Kumar M.;Dubey S.;Jit S.;Tiwari P.K.
DOI 10.1007/s10825-014-0557-0
6 7

An analytical threshold voltage model for triple-material cylindrical gate-all-around (TM-CGAA) MOSFETs

Open Access
Article
IEEE Transactions on Nanotechnology. Year: 2013. Volume: 12 , Issue: 5 , Pages: 766-774 .
Authors: Dubey S.;Santra A.;Saramekala G.;Kumar M.;Tiwari P.K.
DOI 10.1109/TNANO.2013.2273805
45 54

An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET

Open Access
Article
Superlattices and Microstructures. Year: 2013. Volume: 60 , Pages: 580-595 .
Authors: Saramekala G.K.;Santra A.;Dubey S.;Jit S.;Tiwari P.K.
DOI 10.1016/j.spmi.2013.05.022
22 26