Ministry of Education
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Dr Gopi Krishna Saramekala

vidwan id: 603421
Male

Assistant Professor (Grade-I), Department of Electronics and Communication Engineering
National Institute of Technology Calicut

Google Scholar Icon 55777259100

Expertise

  • Telecommunications

Publications

Total Articles 31
Books 0
Proceedings 0

Publications

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Scopus

Citations 206
h-index 8

CrossRef

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Citations 116
h-index 5
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Professional Recognition

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Bio

Electronics and Communication Engineering

Personal Details

  • Male
  • Assistant Professor (Grade-I) , National Institute of Technology Calicut
  • Department of Electronics and Communication Engineering, National Institute of Technology, Calicut
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Assistant Professor (Grade-I) May 2018 – Present
National Institute of Technology Calicut | Department of Electronics and Communication Engineering

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Co-Authors (12)

Chandan

Dr Chandan Yadav

Indian Institute of Technology Jammu

K J

Mr K J Dhanaraj

National Institute of Technology Calicut

Mirgender

Dr Mirgender Kumar

Chandigarh Group of Colleges, Jhanjeri

Kamalakanta

Prof Kamalakanta Mahapatra

National Institute of Technology Rourkela

N.Bheema

Prof N.Bheema Rao

National Institute of Technology Warangal

Pramod Kumar

Dr Pramod Kumar Tiwari

Indian Institute of Technology Patna

Sarvesh

Dr Sarvesh Dubey

Babasaheb Bhimrao Ambedkar Bihar University, Muzaffarpur

Satyabrata

Prof Satyabrata Jit

Indian Institute of Technology (BHU), Varanasi

D

Dr D Srikar

Chaitanya Bharathi Institute of Technology, Hyderabad

Suddapalli

Dr Suddapalli Subba Rao

Indian Institute of Information Technology Design And Manufacturing, Kurnool

Ayas Kanta

Prof Ayas Kanta Swain

National Institute of Technology Rourkela

Pramod Kumar

Prof Pramod Kumar Tiwari

National Institute of Technology Rourkela

Scholarly Work

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Scholarly Publications

Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2|La2O3|HfO2 (HLH) Sandwich Gate Dielectrics

Open Access
Article
Semiconductors. Year: 2020. Volume: 54 , Issue: 10 , Pages: 1290-1295 .
Authors: Ramesh L.;Moparthi S.;Tiwari P.K.;Samoju V.R.;Saramekala G.K.
DOI 10.1134/S1063782620100243
1 3

Modeling of drain current and analog characteristics of dual-metal quadruple gate (DMQG) MOSFETs

Open Access
Conference Paper
Year: 2019. Pages: 365-368 .
Authors: Samoju V.R.;Saramekala G.K.;Tiwari P.K.;Swain A.K.;Mahapatra K.
DOI 10.1109/iSES47678.2019.00090
1

Temperature dependence of subthreshold characteristics of negative capacitance recessed-source/drain (NC R-S/D) SOI MOSFET

Open Access
Conference Paper
Year: 2019. Pages: 386-389 .
Authors: Moparthi S.;Tiwari P.K.;Samoju V.R.;Saramekala G.K.
DOI 10.1109/iSES47678.2019.00095
1 2

Automated Seed Sowing Agribot

Open Access
Conference Paper
Year: 2019.
Authors: Kumar Y.N.;Haswanth C.;Kiran M.H.;Rao M.K.;Raj R.;Saramekala G.K.;Chakrobarty P.A.
DOI 10.1109/ICESIP46348.2019.8938279
10

Analytical Subthreshold Current and Subthreshold Swing Models for a Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFET with Back-Gate Control

Open Access
Article
Journal of Electronic Materials. Year: 2017. Volume: 46 , Issue: 8 , Pages: 5046-5056 .
Authors: Saramekala G.K.;Tiwari P.K.
DOI 10.1007/s11664-017-5508-7

Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs

Open Access
Article
Journal of Semiconductors. Year: 2016. Volume: 37 , Issue: 6 .
Authors: Tiwari P.;Kumar M.;Naik R.;Saramekala G.
DOI 10.1088/1674-4926/37/6/064003
5 8

An Analytical Threshold Voltage Model of Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Back-Gate Control

Open Access
Article
Journal of Electronic Materials. Year: 2016. Volume: 45 , Issue: 10 , Pages: 5367-5374 .
Authors: Saramekala G.K.;Tiwari P.K.
DOI 10.1007/s11664-016-4752-6
3 4

A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high-k dielectric

Open Access
Article
Chinese Physics B. Year: 2015. Volume: 24 , Issue: 10 .
Authors: Krishna Saramekala G.;Dubey S.;Kumar Tiwari P.
DOI 10.1088/1674-1056/24/10/108505
2 4