Ministry of Education
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Dr Mayank Shrivastava

vidwan id: 54781
Male

Associate Professor, Electronic Systems Engineering
Indian Institute of Science Bangalore

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Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 239
Books 0
Proceedings 0

Publications

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Scopus

Citations 2367
h-index 24

CrossRef

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Citations 2101
h-index 23
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Professional Recognition

2018

Young Scientist Platinum Jubilee Award

National Academy of Sciences, India
2018

INSA Young Scientist Award

Indian National Science Academy
2018

Engineening Innovator Entrepreneur Award

Indian National Science Academy

Community & Membership

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Bio

Beyond CMOS Devices, 2D And 1D Materials, Nanoscale Device Design And Modeling, ESD Devices And Circuits, LDMOS And Demos Device Design, Device-Circuit Co-Design And Electrothermal Modeling.

Personal Details

  • Male
  • Associate Professor , Indian Institute of Science Bangalore
  • Indian Institute of Science
Ph.D
Other Institute 2010
BE
Other Institute 2006
Associate Professor Jan 2019 – Present
Indian Institute of Science Bangalore | Electronic Systems Engineering
Assistant Professor Sep 2013 – Dec 2018
Indian Institute of Science Bangalore | Electronic Systems Engineering

Related Profiles

Experts (19623+)

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Pragati

Ms Pragati Mishra

Assistant Professor

Sridhar

Dr Sridhar Sekar

Assistant Professor

DEEPAK

Mr DEEPAK B N

N/A

Md

Dr Md Nadeem M

Assistant Professor

Rashmi

Rashmi Chandra

Assistant Professor

Anjali

Dr Anjali Jadhav

Doctor

Abhishek

Mr Abhishek Shukla

Assistant Professor (Grade-I)

N

Dr N PRAKASH

Assistant Professor

Mrinmoy

Mr Mrinmoy Sadhukhan

Research Scholar

Haranath

Mr Haranath Rakshit

Junior Research Fellow

Organisations (660+)

View All
Rohini

Prof Rohini Balakrishnan

Professor

Balram

Dr Balram Sahoo

Assistant Professor

B.

Prof B. Sundar Rajan

Retired Faculty

Binod

Dr Binod Sreenivasan

Professor

M. S.

Dr M. S. Bobji

Professor

Bhagwati

Prof Bhagwati Prasad

Assistant Professor

Bramha Dutt

Dr Bramha Dutt Vishwakarma

Assistant Professor

Bratati

Dr Bratati Kahali

Assistant Professor

M.H.

Prof M.H. Bala Subrahmanya

Professor (HAG)

Balachandra

Dr Balachandra Suri

Assistant Professor

Co-Authors (20)

Ajay

Prof Ajay Ph.D.

Indian Institute of Technology Roorkee

Arun N

Dr Arun N Chandorkar

N/A

Digbijoy N.

Dr Digbijoy N. Nath

Indian Institute of Science Bangalore

D.

Dr D. Roy Mahapatra

Indian Institute of Science Bangalore

Jeevesh

Dr Jeevesh Kumar

Indian Institute of Technology (Indian School of Mines), Dhanbad

M S

Dr M S Bhat

National Institute of Technology Karnataka

Maryam Shojaei

Dr Maryam Shojaei Baghini

Indian Institute of Technology Bombay

Navakanta

Navakanta Bhat

Indian Institute of Science Bangalore

Prabeer

Dr Prabeer Barpanda

Indian Institute of Science Bangalore

Prasana Kumar

Dr Prasana Kumar Sahoo

Indian Institute of Technology Kharagpur

Praveen

Prof Praveen C. Ramamurthy

Indian Institute of Science Bangalore

Rajan Kumar

Dr Rajan Kumar Pandey

Vellore Institute of Technology, Vellore

V. Ramgopal

Prof V. Ramgopal Rao

Birla Institute of Technology and Science

Sai Gautam

Dr Sai Gautam Gopalakrishnan

Indian Institute of Science Bangalore

Sanjiv

Dr Sanjiv Sambandan

Indian Institute of Science Bangalore

Sayak

Dr Sayak Dutta Gupta

Indian Institute of Technology Madras

Ajay

Dr Ajay Singh

Indian Institute of Technology Guwahati

Shree Prakash

Dr Shree Prakash Tiwari

Indian Institute of Technology Jodhpur

Srinivasan

Dr Srinivasan Raghavan

Indian Institute of Science Bangalore

Vipin

Dr Vipin Joshi

Birla Institute of Technology and Science

Scholarly Work

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Metal oxide semiconductor device architecture with uniform finger turn on and method thereof

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN509703 Filed : 10-04-2023
Published : 12-02-2024 Published

Nanosheet drain extended mosfet"

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN202341007382 Filed : 06-02-2023
Published : 17-02-2023 Published

High electron mobility transistor device"

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN511048 Filed : 01-07-2022
Published : 07-07-2023 Published

FIN-BASED SCR ARCHITECTURES HAVING DISTRIBUTED CURRENT CONFIGURATION AND ENHANCED ESD PROTECTION

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN202041011502A Filed : 17-03-2020
Published : 21-09-2021 Published

NOVEL DRAIN CONNECTED FIELD PLATE HEMT DESIGNS HAVING IMPROVED PERFORMANCE

Indian Institute of Science
- Patent No. : IN202041010165A Filed : 09-03-2020
Published : 10-09-2021 Published

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH RESURF JUNCTION

Indian Institute of Science
Kamataka Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US20200227543A1 Filed : 07-01-2020
Published : 16-07-2020 Published

HIGH ELECTRON MOBILITY TRANSISTOR WITH IMPROVED PERFORMANCE AND LINEARITY

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN201941052639A Filed : 18-12-2019
Published : 25-06-2021 Published

A FLEXIBLE, ADAPTIVE NEUROMORPHIC SYNAPTIC CHIP

Indian Institute of Science
- Patent No. : IN201941028863A Filed : 17-07-2019
Published : 22-01-2021 Published

DOPING AND TRAP PROFILE ENGINEERING IN GaN BUFFER TO MAXIMIZE AlGaN/GaN HEMT EPI STACK BREAKDOWN VOLTAGE

Indian Institute of Science
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US11031493 Filed : 04-06-2019
Published : 08-06-2021 Granted

Mode Field Effect High Electron Mobility (Hemt) Transistor

Indian Institute of Science
- Patent No. : 386363 Filed : 29-08-2018
Published : 11-01-2022 Granted

ENHANCEMENT MODE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

INDIAN INSTITUTE OF SCIENCE
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US20190067440A1 Filed : 28-08-2018
Published : 28-02-2019 Published

High-electron-mobility transistor (HEMT)

INDIAN INSTITUTE OF TECHNOLOGY
Bangalore
IN | INDIAN INSTITUTE OF SCIENCE
Bangalore
IN | INDIAN INST SCIENT | INDIAN INSTITUTE OF TECH
- Patent No. : US10553712B2 Filed : 11-07-2018
Published : 04-02-2020 Published

A High-electron-mobility transistor (HEMT)

INDIAN INSTITUTE OF SCIENCE | INDIAN INSTITUTE OF SCIENCE
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US20190081164A1 Filed : 11-07-2018
Published : 14-03-2019 Published

TRANSISTOR À HAUTE MOBILITÉ D'ÉLECTRONS (HEMT) À JONCTION RESURF | HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH RESURF JUNCTION

INDIAN INSTITUTE OF SCIENCE
IN
- Patent No. : WO2019008603A1 Filed : 06-07-2018
Published : 10-01-2019 Published

DOPING AND TRAP PROFILE ENGINEERING IN GAN BUFFER TO MAXIMIZE ALGAN/GAN HEMT EPI STACK BREAKDOWN VOLTAGE

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN424057 Filed : 05-06-2018
Published : 04-03-2023 Granted

FinFET SCR with SCR implant under anode and cathode junctions

INDIAN INSTITUTE OF SCIENCE
Karnataka
Bangalore
IN | Indian Institute of Science
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US10535762B2 Filed : 19-02-2018
Published : 14-01-2020 Published

Semiconductor devices and methods to enhance electrostatic discharge (ESD) robustness, latch-up, and hot carrier immunity

INDIAN INSTITUTE OF SCIENCE
Karnataka
Bangalore
IN | Indian Institute of Science
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US10483258B2 Filed : 19-02-2018
Published : 19-11-2019 Published

FINFET SCR WITH SCR IMPLANT UNDER ANODE AND CATHODE JUNCTIONS

Indian Institute of Science
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US20180248025A1 Filed : 19-02-2018
Published : 30-08-2018 Published

SEMICONDUCTOR DEVICES AND METHODS TO ENHANCE ELECTROSTATIC DISCHARGE (ESD) ROBUSTNESS, LATCH-UP, AND HOT CARRIER IMMUNITY

Indian Institute of Science
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US20180247929A1 Filed : 19-02-2018
Published : 30-08-2018 Published

SEMICONDUCTOR DEVICE AND METHODS TO ENHANCE ELECTROSTATIC DISCHARGE (ESD) ROBUSTNESS, lLATCH-UP,AND HOT CARRIER IMMUNITY

INDIAN INSTITUTE OF SCIENCE
- Patent No. : US10483258B2 Filed : 19-02-2018
Published : 19-11-2019 Published

Dual fin silicon controlled rectifier (SCR) electrostatic discharge (ESD) protection device

INDIAN INSTITUTE OF SCIENCE
Bangalore
IN | INDIAN INSTITUTE OF SCIENCE
Bangalore
Karnataka
IN | INDIAN INST SCIENT
- Patent No. : US10629586B2 Filed : 30-01-2018
Published : 21-04-2020 Published

DUAL FIN SILICON CONTROLLED RECTIFIER (SCR) ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE

INDIAN INSTITUTE OF SCIENCE
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US20190013310A1 Filed : 30-01-2018
Published : 10-01-2019 Published

Non-planar electrostatic discharge (ESD) protection devices with nano heat sinks

INDIAN INSTITUTE OF SCIENCE
Bangalore
IN | INDIAN INSTITUTE OF SCIENCE
Bangalore
Karnataka
IN | INDIAN INST SCIENT
- Patent No. : US10319662B2 Filed : 30-01-2018
Published : 11-06-2019 Published

Low trigger and holding voltage silicon controlled rectifier (SCR) for non-planar technologies

INDIAN INST SCIENT | INDIAN INSTITUTE OF SCIENCE
Bangalore
IN
- Patent No. : US10211200B2 Filed : 30-01-2018
Published : 19-02-2019 Published

NON-PLANAR ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICES WITH NANO HEAT SINKS

INDIAN INSTITUTE OF SCIENCE
Bangalore
IN | INDIAN INST SCIENT
- Patent No. : US20180226317A1 Filed : 30-01-2018
Published : 09-08-2018 Published

LOW TRIGGER AND HOLDING VOLTAGE SILICON CONTROLLED RECTIFIER (SCR) FOR NON-PLANAR TECHNOLOGIES

INDIAN INST SCIENT | INDIAN INSTITUTE OF SCIENCE
Bangalore
IN
- Patent No. : US20180219007A1 Filed : 30-01-2018
Published : 02-08-2018 Published

DUAL FIN SILICON CONTROLLED RECTIFIER (SCR) ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE

INDIAN INSTITUTE OF SCIENCE
- Patent No. : 409411 Filed : 03-01-2018
Published : 19-10-2022 Granted

METHODS OF MANUFACTURING 2-DIMENTIONAL SEMICONDUCTOR TRANSISTORS

Indian Institute of Science
- Patent No. : IN201741033081A Filed : 19-09-2017
Published : 22-03-2019 Published

ENHANCEMENT MODE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN201741030570 Filed : 29-08-2017
Published : 01-03-2019 Published

A FIELD EFFECT TRANSISTOR (FET) WITH IMPROVED FAILURE THRESHOLD

Indian Institute of Science
- Patent No. : IN201741025123A Filed : 14-07-2017
Published : 18-01-2019 Published

RECESS GATE SUPERJUNCTION HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT)

Indian Institute of Science
- Patent No. : IN201741024695A Filed : 12-07-2017
Published : 18-01-2019 Published

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH RESURF JUNCTION

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN310947B Filed : 07-07-2017
Published : 12-04-2019 Published

BURIED CHANNEL NORMALLY-OFF GAN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH RESURF JUNCTION

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN201741024073A Filed : 07-07-2017
Published : 27-07-2018 Published

FINFET SCR WITH SCR IMPLANT UNDER ANODE AND CATHODE JUNCTIONS

Indian Institute of Science
- Patent No. : IN201741006746A Filed : 25-02-2017
Published : 31-08-2018 Published

ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICES FOR ESD ROBUSTNESS AND LATCH-UP IMMUNITY

Indian Institute of Science
- Patent No. : IN201741006745A Filed : 25-02-2017
Published : 31-08-2018 Published

SEMICONDUCTOR DEVICES AND METHODS TO ENHANCE ELECTROSTATIC DISCHARGE (ESD) ROBUSTNESS, LATCH-UP, AND HOT CARRIER IMMUNITY

Indian Institute of Science
- Patent No. : IN201741006745A Filed : 25-02-2017
Published : 09-09-2021 Granted

DRAIN EXTENDED TUNNEL FIELD EFFECT TRANSISTOR

INDIAN INSTITUTE OF SCIENCE
- Patent No. : US20210119044B2 Filed : 23-02-2017
Published : 22-04-2021 Published

NON-PLANAR ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICES WITH NANO HEAT SINKS

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN201741003773A Filed : 01-02-2017
Published : 12-06-2021 Granted

LOW TRIGGER AND HOLDING VOLTAGE SILICON CONTROLLED RECTIFIER (SCR) FOR NON-PLANAR TECHNOLOGIES

INDIAN INSTITUTE OF SCIENCE
- Patent No. : IN201741003772A Filed : 01-02-2017
Published : 31-12-2021 Granted

DRAIN EXTENDED TUNNEL FIELD EFFECT TRANSISTOR

Indian Institute of Science
- Patent No. : IN201641006497A Filed : 25-02-2016
Published : 01-09-2017 Published

FIN ENABLED AREA SCALED TUNNEL FIELD EFFECT TRANSISTER

Indian Institute of Science
- Patent No. : IN2625CHE2015A Filed : 26-05-2015
Published : 16-04-2021 Granted

MINIATURIZED, HIGH POWER DENSITY POWER ELECTRONIC SYSTEM ON A CHIP

Indian Institute of Science
- Patent No. : IN201501355I4 Filed : 19-03-2015
Published : 30-09-2016 Published

Scholarly Publications

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic RONin AlGaN/GaN HEMTs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 11 , Pages: 6035-6042 .
Authors: Joshi V.;Gupta S.D.;Chaudhuri R.R.;Shrivastava M.
DOI 10.1109/TED.2022.3209635
5 7

Performance and Reliability Co-Design of HV devices in Vertically Stacked Nanosheet Technology

Open Access
Conference Paper
Year: 2022.
Authors: Jatin J.;Monishmurali M.;Gautam S.K.;Shrivastava M.
DOI 10.1109/ICEE56203.2022.10118336
1

The Physical Insight into Holding Voltage Engineering of SCR for ESD Protection

Open Access
Conference Paper
Year: 2022.
Authors: Gautam S.K.;Jatin J.;Monishmurali M.;Shrivastava M.
DOI 10.1109/ICEE56203.2022.10117624

Physical Insights Into the ESD Behavior of Field Plated UHV LDMOS Devices

Open Access
Conference Paper
Year: 2022.
Authors: Variar H.B.;Somayaji J.;Shrivastava M.
DOI 10.1109/ICEE56203.2022.10118203

Performance and Reliability Co-design of Ultra High Voltage LDMOS Devices

Open Access
Conference Paper
Year: 2022.
Authors: Variar H.B.;Somayaji J.;Shrivastava M.
DOI 10.1109/ICEE56203.2022.10117871

Device-Circuit Co-Design and ESD/HCI Reliability Aware Design of Field Plated RF LDMOS Devices

Open Access
Conference Paper
Year: 2022.
Authors: Variar H.B.;Singh A.;Somayaji J.;Shrivastava M.
DOI 10.1109/ICEE56203.2022.10118172

Exploring the Feasibility of AlN/GaN HEMTs for THz Applications Using a Novel Device-Circuit Co-Design Approach

Open Access
Conference Paper
Year: 2022.
Authors: Variar H.B.;Singh A.;Soni A.;Shrivastava M.
DOI 10.1109/ICEE56203.2022.10117788
1

Observations and Physical Insights into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 12 , Pages: 6602-6609 .
Authors: Roy Chaudhuri R.;Joshi V.;Dutta Gupta S.;Shrivastava M.
DOI 10.1109/TED.2022.3213627
3 4