Dr Vipin Joshi
vidwan id: 540256
Assistant Professor, Department of Mechanical Engineering
Birla Institute of Technology and Science
Expertise
- Electrical and Electronic Engineering
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10
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492
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13
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Bio
Dr. Vipin Joshi works on design, and performance and reliability physics analysis of next generation power semiconductor devices. Focusing on wide band gap semiconductor based devices, like, Gallium Nitride High Electron Mobility Transistors and diodes, his research has solved various problems related to buffer design, surface design and dynamic on resistance resilient designs. Moreover, his research work has provided deep physical insights into different hot electron dynamics within these devic
Personal Details
- Male
- Assistant Professor , Birla Institute of Technology and Science
- BITS Pilani Goa Campus, NH 17B, Bypass, Road, Zuarinagar, Sankval, Goa
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Co-Authors (7)
AMITY University,Jarkhand
Malaviya National Institute of Technology Jaipur
Indian Institute of Science Bangalore
Indian Institute of Science Bangalore
Indian Institute of Technology Madras
Indian Institute of Technology Jodhpur
Indian Institute of Science Bangalore
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Doping and Trap Profile Engineering in GaN Buffer To Maximize AlGaN/GaN HEMT Epi Stack Breakdown Voltage
Mayank Shrivastava and Vipin Joshi
Scholarly Publications
Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I
Open AccessOn the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs
Open AccessPart I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs
Open Access'Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors '
Open AccessInterplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs—Part II
Open AccessNovel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs—Part II
Open AccessPhysical Insights into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs - Part i
Open Access
10.1109/TED.2020.3034561
17
18
Interplay between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs - Part II
Open Access
10.1109/TED.2020.3034562
15
20