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Dr Vipin Joshi

vidwan id: 540256
Male

Assistant Professor, Department of Mechanical Engineering
Birla Institute of Technology and Science

Orchid Icon 0000-0002-7144-451X Google Scholar Icon 57188956104 Researcher Icon AAV-4750-2020 Google Scholar Icon i8DnvR4AAAAJ

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 51
Books 0
Proceedings 0

Publications

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Scopus

Citations 451
h-index 10

CrossRef

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Citations 492
h-index 13
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Bio

Dr. Vipin Joshi works on design, and performance and reliability physics analysis of next generation power semiconductor devices. Focusing on wide band gap semiconductor based devices, like, Gallium Nitride High Electron Mobility Transistors and diodes, his research has solved various problems related to buffer design, surface design and dynamic on resistance resilient designs. Moreover, his research work has provided deep physical insights into different hot electron dynamics within these devic

Personal Details

  • Male
  • Assistant Professor , Birla Institute of Technology and Science
  • BITS Pilani Goa Campus, NH 17B, Bypass, Road, Zuarinagar, Sankval, Goa
Ph.D.
Indian Institute of Technology Jodhpur 2019
M.Tech.
Malaviya National Institute of Technology Jaipur 2011
B.E.
University of Rajasthan 2009
Assistant Professor Jun 2024 – Present
Birla Institute of Technology and Science | Department of Mechanical Engineering
Project Scientist Jul 2018 – Apr 2024
Indian Institute of Science Bangalore | Centre For Electronics Design And Technology
Research Scholar Jul 2013 – Jul 2018
Indian Institute of Technology Jodhpur | Department of Electrical Engineering

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Co-Authors (7)

Ajay Kumar

Dr Ajay Kumar Mahato

AMITY University,Jarkhand

Deepak

Dr Deepak Bharti

Malaviya National Institute of Technology Jaipur

Mayank

Dr Mayank Shrivastava

Indian Institute of Science Bangalore

Navakanta

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Sayak

Dr Sayak Dutta Gupta

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Dr Srinivasan Raghavan

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Scholarly Work

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Doping and Trap Profile Engineering in GaN Buffer To Maximize AlGaN/GaN HEMT Epi Stack Breakdown Voltage

Mayank Shrivastava and Vipin Joshi
Engineering and Technology Patent No. : 11031493 Filed : 04-06-2019
Published : 08-06-2021 Granted

Scholarly Publications

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic RON Behavior in AlGaN/GaN HEMTs—Part II

Open Access
ARTICLE
IEEE Transactions on Electron Devices. Year: 2023. Volume: 70 , Pages: 6183-6189 .
Authors: Rajarshi Roy Chaudhuri, Amratansh Gupta, Vipin Joshi, Rasik Rashid Malik, Sayak Dutta Gupta, and Mayank Shrivastava
DOI 10.1109/TED.2023.3300652
4

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer

Open Access
Conference Paper
Year: 2023. Volume: 2023-March .
Authors: Joshi V.;Gupta S.D.;Chaudhuri R.R.;Shrivastava M.
DOI 10.1109/IRPS48203.2023.10118195

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RONof AlGaN/GaN HEMTs under Semi-on State

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 12 , Pages: 6934-6939 .
Authors: Dutta Gupta S.;Joshi V.;Chaudhuri R.R.;Shrivastava M.
DOI 10.1109/TED.2022.3212327
5 7

Observations and Physical Insights into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 12 , Pages: 6602-6609 .
Authors: Roy Chaudhuri R.;Joshi V.;Dutta Gupta S.;Shrivastava M.
DOI 10.1109/TED.2022.3213627
3 4

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic RONin AlGaN/GaN HEMTs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 11 , Pages: 6035-6042 .
Authors: Joshi V.;Gupta S.D.;Chaudhuri R.R.;Shrivastava M.
DOI 10.1109/TED.2022.3209635
5 7

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State

Open Access
ARTICLE
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Pages: 6934-6939 .
Authors: Sayak Dutta Gupta, Vipin Joshi, Rajarshi Roy Chaudhuri, and Mayank Shrivastava
DOI 10.1109/TED.2022.3212327
5

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

Open Access
ARTICLE
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Pages: 6035-6042 .
Authors: Vipin Joshi, Sayak Dutta Gupta, Rajarshi Roy Chaudhuri, and Mayank Shrivastava
DOI 10.1109/TED.2022.3209635
5

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control over the 2-DEG

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2022. Volume: 69 , Issue: 3 , Pages: 1608-1611 .
Authors: Dutta Gupta S.;Joshi V.;Chaudhuri R.R.;Shrivastava M.
DOI 10.1109/TED.2022.3144378
6 6