Ministry of Education
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Mr Ashutosh Nandi

vidwan id: 53697
Male

Assistant Professor, Department of Electronics and Communication Engineering
National Institute of Technology Kurukshetra

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Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 47
Books 0
Proceedings 0

Publications

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Scopus

Citations 781
h-index 18

CrossRef

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Citations 214
h-index 8
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Bio

Low Power and Low Temperature VLSI Design, Device Circuit Co-Design in Digital/Analog Domain, Device Modeling of Multigate Semiconductor Devices

Personal Details

  • Male
  • Assistant Professor , National Institute of Technology Kurukshetra
  • National Institute of Technology Kurukshetra
M TECH
National Institute of Technology, Hamirpur 2010
Assistant Professor Sep 2013 – Present
National Institute of Technology Kurukshetra | Department of Electronics and Communication Engineering

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Co-Authors (8)

Nirmal

Dr Nirmal D

Karunya Institute of Technology and Sciences, Coimbatore

Ajayan

Dr Ajayan J

SR University

Ashok K.

Dr Ashok K. Saxena

N/A

Rajeevan

Prof Rajeevan Chandel

National Institute of Technology, Hamirpur

Sudeb

Prof Sudeb Dasgupta

Indian Institute of Technology Roorkee

Sunil

Dr Sunil Jadav

J.C. Bose University of Science and Technology

Tarun

Dr Tarun Juluru

SR University

JULURU

Dr JULURU TARUN KUMAR

Kakatiya Institute of Technology and Science

Scholarly Work

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Scholarly Publications

Halogens and Alkali Metals Adsorbed Uni-axially Strained ZnS Sphalerite Monolayer for Application in Optoelectronics

Open Access
Article
Journal of Electronic Materials. Year: 2025. Volume: 54 , Issue: 2 , Pages: 1335-1343 .
Authors: Tyagi M.;Choudhary S.;nandi A.
DOI 10.1007/s11664-024-11515-w

Noise performance of back-barrier engineered GaN-based trigate HEMT for X-band applications

Open Access
Article
Year: 2024. Volume: 37 , Issue: 2 .
Authors: Verma M.;Nandi A.
DOI 10.1002/jnm.3160

A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective

Open Access
Article
Year: 2022. Volume: 14 , Issue: 7 , Pages: 3543-3550 .
Authors: Tayal S.;Ajayan J.;Joseph L.M.I.L.;Tarunkumar J.;Nirmal D.;Jena B.;Nandi A.
DOI 10.1007/s12633-021-01128-x
27 30

GaN based trigate HEMT with AlGaN back-barrier layer: Proposal and investigation

Open Access
Article
Year: 2022. Volume: 37 , Issue: 6 .
Authors: Verma M.;Nandi A.
DOI 10.1088/1361-6641/ac6970
4

Temperature sensitivity analysis of inner-gate engineered JL-SiNT-FET: An Analog/RF prospective

Open Access
Article
Cryogenics. Year: 2020. Volume: 108 .
Authors: Tayal S.;Mittal V.;Jadav S.;Gupta S.;Nandi A.;Krishan B.
DOI 10.1016/j.cryogenics.2020.103087
20

Design and Analysis of AlGaN/GaN Based DG MOSHEMT for High-Frequency Application

Open Access
Article
Transactions on Electrical and Electronic Materials. Year: 2020. Volume: 21 , Issue: 4 , Pages: 427-435 .
Authors: Verma M.;Nandi A.
DOI 10.1007/s42341-020-00196-x
9

Modeling source/drain lateral Gaussian doping profile of DG-MOSFET using Green's function approach

Open Access
Article
Year: 2020. Volume: 171 .
Authors: Shukla A.K.;Nandi A.;Dasgupta S.
DOI 10.1016/j.sse.2020.107866
1 11

Temperature analysis of underlap GAA-SNWTs for analog/RF applications

Open Access
Article
Microelectronics Journal. Year: 2019. Volume: 90 , Pages: 58-62 .
Authors: Gupta S.;Nandi A.
DOI 10.1016/j.mejo.2019.05.012
8