Dr Pragya Kushwaha
vidwan id: 526624
Senior Scientific Officer, IDRP- AIoT and Applications
Indian Institute of Technology Jodhpur
Expertise
- Electrical and Electronic Engineering
Publications
Publications
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Scopus
h-index
21
CrossRef
Citations
634
h-index
15
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Professional Recognition
Prestigious Ramanujan fellowship 2020
SERB, Department of Science and Technology, IndiaIEEE EDS Early Career Award 2019
IEEE EDSGold medal for academic excellence in M.tech Microelectronics
Panjab University ChandigarhSelected for leadership training program - Women in Space and Allied Science Leadership
Indian National Academy of Engineering and Department of Science and Technology, Govt. of IndiaCommunity & Membership
IEEE South Asia Working Group
Member SecretaryIEEE EDS Women in Electron Device Society
Committte MemberIEEE EDS Nanotechnology Committee
Technical Committee MemberIEEE Electron Device Society
Bio
RF Characterization and modeling, Nanoscale semiconductor devices for IoT/AI applications, Cryogenic semiconductor devices for Quantum computing. Single photon Avalanche Photodiodes for Quantum communication applications.
Personal Details
- Female
- Senior Scientific Officer , Indian Institute of Technology Jodhpur
- NH-62, Nagaur Road, Karwar
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Co-Authors (8)
Indian Institute of Science Education and Research(IISER), Bhopal
Indian Institute of Technology Delhi
Indian Institute of Technology Jodhpur
Indian Institute of Technology Kanpur
Indian Institute of Technology Jammu
Indian Institute of Technology Kanpur
Indian Institute of Technology Gandhinagar
National Institute of Technology Srinagar
Scholarly Work
Sub-5nm Semiconductor Device Investigation and Compact Model Development
Funding Agency: Department of Science and Technology, Govt. of India
PI
3,500,000
2021 - Ongoing
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Scholarly Publications
Effect of Polycrystallinity and Presence of Dielectric Phases on NC-FinFET Variability
Open AccessNegative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation
Open AccessVariation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor
Open AccessNCFET Design Considering Maximum Interface Electric Field
Open Access
10.1109/LED.2018.2849508
17
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