Ministry of Education
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Dr Aditya Sankar Medury

vidwan id: 554730
Male

Associate Professor, Department of Electrical Engineering and Computer Science
Indian Institute of Science Education and Research(IISER), Bhopal

Orchid Icon 0000-0002-4961-3188 Google Scholar Icon 54881050900

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 42
Books 0
Proceedings 0

Publications

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Scopus

Citations 263
h-index 9

CrossRef

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Citations 193
h-index 8
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Community & Membership

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Bio

Analytical, Compact Modeling

Personal Details

  • Male
  • Associate Professor , Indian Institute of Science Education and Research(IISER), Bhopal
  • Department of Electrical Engineering and Computer Science, Indian Institute of Science Education and Research, Bhopal
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Associate Professor Jul 2016 – Present
Indian Institute of Science Education and Research(IISER), Bhopal | Department of Electrical Engineering and Computer Science

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Co-Authors (8)

Harshit

Dr Harshit Agarwal

Indian Institute of Technology Jodhpur

Aditya

Dr Aditya Medury

Indian Institute of Technology Kanpur

Yogesh Singh

Dr Yogesh Singh Chauhan

Indian Institute of Technology Kanpur

Ashok Kumar

Dr Ashok Kumar Gupta

N/A

Kausik

Dr Kausik Majumdar

Indian Institute of Science Bangalore

Navakanta

Navakanta Bhat

Indian Institute of Science Bangalore

Pragya

Dr Pragya Kushwaha

Indian Institute of Technology Jodhpur

Suresh

Prof Suresh Bhalla

Indian Institute of Technology Delhi

Scholarly Work

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Scholarly Publications

Temperature dependence of analog/RF performance, linearity and harmonic distortion figures of merit in negative capacitance quad-FinFET

Open Access
Article
Analog Integrated Circuits and Signal Processing. Year: 2025. Volume: 122 , Issue: 1 .
Authors: Vanlalawmpuia K.;Medury A.S.
DOI 10.1007/s10470-025-02324-0

Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices

Open Access
Article
IEEE Transactions on Device and Materials Reliability. Year: 2024. Volume: 24 , Issue: 2 , Pages: 225-232 .
Authors: Mishra N.V.;Medury A.S.
DOI 10.1109/TDMR.2024.3366592
1

Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2024. Volume: 12 , Pages: 881-888 .
Authors: Vilochan Mishra N.;Sankar Medury A.
DOI 10.1109/JEDS.2024.3469398

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

Open Access
Article
Year: 2024. Volume: 39 , Issue: 6 .
Authors: Kansal H.;Medury A.S.
DOI 10.1088/1361-6641/ad42cc

Band-structure based electrostatics model for ultra-thin-body double-gate silicon-on-insulator MOS devices

Open Access
Article
Year: 2023. Volume: 56 , Issue: 41 .
Authors: Mishra N.V.;Kansal H.;Solanki R.;Medury A.S.
DOI 10.1088/1361-6463/ace457
1

Engineering negative capacitance Fully Depleted Silicon-on-insulator FET for improved performance

Open Access
Article
Microelectronics Journal. Year: 2023. Volume: 140 .
Authors: Kansal H.;Medury A.S.
DOI 10.1016/j.mejo.2023.105917
1 1

Impact of band edge energy on interface traps and electrostatics of ultra-thin-body silicon-on-insulator devices

Open Access
Article
Journal of Applied Physics. Year: 2023. Volume: 133 , Issue: 17 .
Authors: Mishra N.V.;Medury A.S.
DOI 10.1063/5.0147578
1 4

Analysis and Mitigation of Negative Differential Resistance effects in Double-Gate Silicon-on-Insulator Negative Capacitance Field Effect Transistor with improved analog performance

Open Access
Article
Microelectronics Journal. Year: 2023. Volume: 136 .
Authors: Pratap M.;Kansal H.;Medury A.S.
DOI 10.1016/j.mejo.2023.105777
3 5