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Prof Aloke Dutta

vidwan id: 4526
Male

Professor, Department of Electrical Engineering
Indian Institute of Technology Kanpur

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 42
Books 0
Proceedings 0

Publications

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Scopus

Citations 349
h-index 10

CrossRef

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Citations 300
h-index 10
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Professional Recognition

1986

Kaiser Fellowship

College of Engineering at LSU, Baton Rouge

Community & Membership

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Institute of Electrical and Electronics Engineers

Senior Member

Electrical Engineering Honor Societies in the US

Member

Bio

Semiconductor Device Physics and Modeling, Analog and Digital VLSI Circuits, IC Fabrication Technology and Device Characterization, Mixed Signal RF Circuits

Personal Details

  • Male
  • Professor , Indian Institute of Technology Kanpur
  • Indian Institute of Technology Kanpur
Ph.D
Other Institute 1989
Professor Nov -0001 – Present
Indian Institute of Technology Kanpur | Department of Electrical Engineering

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Co-Authors (5)

Amit

Dr Amit Verma

Indian Institute of Technology Kanpur

Yogesh Singh

Dr Yogesh Singh Chauhan

Indian Institute of Technology Kanpur

Imon

Dr Imon Mondal

Indian Institute of Technology Kanpur

Rajni Kant

Prof Rajni Kant Pandey

Indian Institute of Technology Kharagpur

Vaskar

Dr Vaskar Sarkar

Indian Institute of Technology Hyderabad

Scholarly Work

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Scholarly Publications

A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

Open Access
Article

Analytical Drain Current Modeling of Double-Gate Tunnel Field-Effect Transistors

Open Access
Article

Analytical surface potential and drain current models of dual-metal-gate double-gate tunnel-FETs

Open Access
Article

Resistance-Based Approach for Drain Current Modeling in Graphene FETs

Open Access
Article

Analytical one-dimensional current-voltage model for FD SOI MOSFETs including the effect of substrate depletion

Open Access
Article

A unified analytical one-dimensional surface potential model for partially depleted (PD) and fully depleted (FD) SOI MOSFETs

Open Access
Article

An analytical model of the first eigen energy level for MOSFETs having ultrathin gate oxides

Open Access
Article

An analytical gate tunneling current model for MOSFETs having ultrathin gate oxides

Open Access
Article