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Prof Aloke Dutta

vidwan id: 4526
Male

Professor, Department of Electrical Engineering
Indian Institute of Technology Kanpur

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 42
Books 0
Proceedings 0

Publications

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Scopus

Citations 349
h-index 10

CrossRef

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Citations 300
h-index 10
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Professional Recognition

1986

Kaiser Fellowship

College of Engineering at LSU, Baton Rouge

Community & Membership

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Institute of Electrical and Electronics Engineers

Senior Member

Electrical Engineering Honor Societies in the US

Member

Bio

Semiconductor Device Physics and Modeling, Analog and Digital VLSI Circuits, IC Fabrication Technology and Device Characterization, Mixed Signal RF Circuits

Personal Details

  • Male
  • Professor , Indian Institute of Technology Kanpur
  • Indian Institute of Technology Kanpur
Ph.D
Other Institute 1989
Professor Nov -0001 – Present
Indian Institute of Technology Kanpur | Department of Electrical Engineering

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Co-Authors (5)

Amit

Dr Amit Verma

Indian Institute of Technology Kanpur

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Indian Institute of Technology Kanpur

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Scholarly Work

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Scholarly Publications

Benchmarking of the BSIM-BULK for Cryo-CMOS Design

Open Access
Conference Paper
Authors: Manzoor W.;Manzoor N.;Zarkob Y.H.;Nandi D.;Dutta A.K.;Chauhan Y.S.

Characterization and Modeling of Fully Depleted SOI Varactor With Independently Controlled Front- and Back-Gates for RF Applications

Open Access
Article

A Comprehensive Study of Threshold Voltage Extraction Techniques From Room to Cryogenic Temperatures

Open Access
Article

Compact Modeling of Kink Effect in BULK MOSFETs at Cryogenic Temperatures

Open Access
Conference Paper
Authors: Manzoor N.;Manzoor W.;Nandi D.;Dutta A.K.;Chauhan Y.S.

Extending Standard BSIM-BULK Model to Cryogenic Temperatures

Open Access
Article

Analysis and Modeling of Negative Transconductance in Zero-Threshold Voltage MOSFETs at Cryogenic Temperatures

Open Access
Conference Paper
Authors: Manzoor W.;Dutta A.K.;Chauhan Y.S.

A Theoretical Study of Negative Capacitance Field-Effect Transistors Using Ferroelectrics Having First- and Second-Order Phase Transitions

Open Access
Article

An Empirical Model for Bulk Electron Mobility in Si at Cryogenic Temperatures

Open Access
Article