Ministry of Education
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Mr Niratyay Biswas

vidwan id: 260463
Male

Assistant Professor, Department of Electronics and Communication Engineering
Asansol Engineering College

Expertise

  • Telecommunications

Publications

Total Articles 4
Books 0
Proceedings 0

Publications

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Professional Recognition

2006

Departmental Topper Physics Department.

Bangabasi College, Calcutta University.
2005

Departmental Topper Physics Department. Part-I exam.

Bangabasi College, Calcutta University.

Community & Membership

2022

Disciplinary Standing Committee (FI ESTA 2022)

Member
2022

Departmental Infostructure Maintenance Committee

Coordinator(ECE)
2021

Departmental Year Coordinator

Coordinator

IEEE

2009
Student membership

Bio

Design, modelling, simulation of MMW and THz semiconductor devices.

Personal Details

  • Male
  • Assistant Professor , Asansol Engineering College
  • Department of Electronics and Communication Engineering, Asansol Engineering College
Ph.D (Perusing)
W.B.U.T 2022
M.Tech
Other Institute 2011
B.Tech
Other Institute 2009
B.Sc Physics Honours
Other Institute 2006
Assistant Professor Mar 2016 – Present
Asansol Engineering College | Department of Electronics and Communication Engineering
Scientist Apr 2012 – May 2015
Calcutta University
Assistant Professor Mar 2012 – Mar 2012
Adamas University | Department of Electronics and Communication Engineering
Assistant Professor Jul 2011 – Feb 2012
Brainware Group of Institutions- SDET

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Co-Authors (1)

(Dr.) Moumita

Prof (Dr.) Moumita Mukherjee

Adamas University

Scholarly Work

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Scholarly Publications

Determination of junction depth in ion implanted millimeter wave (MMW)-transit time devices by a modified three moment approach

Open Access
Conference Paper
AIP Conference Proceedings. Year: 2019. Volume: 2072 .
Authors: Biswas N.;Mukherjee M.;Chatterjee S.
DOI 10.1063/1.5090249

“Determination of junction depth in ion implanted millimeter wave (MMW)-transit time devices by a modified three moment approach”

Open Access
conference proceedings
AIP Conference Proceedings. Year: 2019. Volume: 2072 .
Authors: Niratyay Biswas ., Moumita Mukherjee ., Sayan Chatterjee .,
DOI 10.1063/1.5090249

Simulation of Ion-Implanted Doping Profile for Determination of Junction Depth in ATT Devices

Open Access
conference paper
Year: 2012.
Authors: Niratyay Biswas , Moumita Mukherjee,

Effects of mobile space charge in narrow band gap (Si) & wide band gap (4H-SiC) semiconductor based IMPATT diodes operating at mm wave window frequency’,

Open Access
conference paper
Year: 2011.
Authors: Niratyay Biswas , Moumita Mukherjee, J.P.Banerjee