Mr Kuldip Singh
vidwan id: 215941
Principal Scientist, Semiconductor Device Fabrication Group
Central Electronics Enginnering Research Institute
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- Electrical and Electronic Engineering
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8
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139
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6
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Bio
Design and Fabrication of III-V Compound Semiconductors Based Devices Like Laser Diodes, P-I-N Photodiodes, Hall Sensors, GaN LEDs
Personal Details
- Male
- Principal Scientist , Central Electronics Enginnering Research Institute
- Central Electronics Engineering Research Institute, Pilani
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Co-Authors (28)
Chandigarh University
Central Electronics Enginnering Research Institute
CSIR-National Physical Laboratory
Jaypee Institute of Information Technology, Noida
National Institute of Technology Calicut
Malaviya National Institute of Technology Jaipur
Central Electronics Enginnering Research Institute
Chaudhary Bansi Lal University
Swami Keshwanand Institute of Technology, Management & Gramothan, Jaipur
The Charutar Vidya Mandal (CVM) University
Central Electronics Enginnering Research Institute
Central Electronics Enginnering Research Institute
Guru Jambheshwar University of Science & Technology
Central Electronics Enginnering Research Institute
Central Electronics Enginnering Research Institute
Visvesvaraya National Institute of Technology
Birla Institute of Technology and Science
Central Electronics Enginnering Research Institute
Birla Institute of Technology and Science
Birla Institute of Technology and Science
Guru Jambheshwar University of Science & Technology
Birla Institute of Technology and Science
Central Electronics Enginnering Research Institute
Indian Institute of Technology, Tirupati
Malaviya National Institute of Technology Jaipur
Malaviya National Institute of Technology Jaipur
Scholarly Work
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Scholarly Publications
A comparative study of deformation field due to center of dilatation and center of rotation in a viscoelastic half-space model
Open AccessTwo Dimensional Deformation of a Multilayered Thermoelastic Half-Space Due to Surface Loads and Heat Source
Open AccessGaN/InAlN chirped short period superlattice as strain free top cladding for blue laser diode
Open AccessEffects of AlInN graded polarization-dependent doped top cladding on the performance of deep ultra-violet laser diode emitting at ∼271 nm wavelength
Open AccessElectrical and optical properties of InGaN/GaN MQWs light-emitting diodes with Ni/Au/ITO transparent p-contacts
Open AccessHigh-Resolution AlGaN/GaN HEMT-Based Electrochemical Sensor for Biomedical Applications
Open Access
10.1109/TED.2019.2949821
31
42