Ministry of Education
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Mr Arivazhagan L

vidwan id: 194789
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,

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Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 29
Books 0
Proceedings 0

Publications

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Scopus

Citations 496
h-index 10

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Citations 421
h-index 10
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  • Male
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Assistant Professor Jan 2021 – —
Sri Ramakrishna Engineering College, Coimbatore | Electronics and Communication Engineering

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Co-Authors (14)

Ashok

Dr Ashok Kumar Ray

North Eastern Regional Institute of science and technology (NERIST)

Amir Anton Jone

Dr Amir Anton Jone A

Karunya Institute of Technology and Sciences, Coimbatore

Augustine

Dr Augustine Fletcher A S

Karunya Institute of Technology and Sciences, Coimbatore

Nirmal

Dr Nirmal D

Karunya Institute of Technology and Sciences, Coimbatore

Rajesh

Dr Rajesh S

Karunya Institute of Technology and Sciences, Coimbatore

Ajayan

Dr Ajayan J

SR University

Manikandan

Dr Manikandan M

Presidency University , Bengaluru

Raj Kumar

Mr Raj Kumar J S

Karunya Institute of Technology and Sciences, Coimbatore

Mohan Kumar

Dr Mohan Kumar Nagarajan

Symbiosis Institute of Technology

Chandan Kumar

Prof Chandan Kumar Sarkar

Jadavpur University

Prajoon

Dr Prajoon P

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Saravanan

Ms Saravanan M

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Subash

Dr Subash T D

Vijnan Institute of Science & Technology, Nelluruppara, Elanji, Piravam

Vidhya

Dr Vidhya B

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Scholarly Work

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Scholarly Publications

Modeling of self-heating for AlGaN/GaN HEMT with thermal conductivity degradation effect

Open Access
Conference Paper
AIP Conference Proceedings. Year: 2019. Volume: 2201 .
Authors: Arivazhagan L.;Nirmal D.;Ajayan J.;Godfrey D.;Rakkumar J.S.;Bhagya Lakshmi S.
DOI 10.1063/1.5141434
4 4

Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation

Open Access
Conference Paper
AIP Conference Proceedings. Year: 2019. Volume: 2201 .
Authors: Arivazhagan L.;Nirmal D.;Ajayan J.;Godfrey D.;Rajkumar J.S.;Bhagya Lakshmi S.
DOI 10.1063/1.5141433
1

Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs

Open Access
Article
Year: 2019. Volume: 37 , Issue: 6 .
Authors: Ajayan J.;Nirmal D.;Kurian D.;Mohankumar P.;Arivazhagan L.;Augustine Fletcher A.S.;Subash T.D.;Saravanan M.
DOI 10.1116/1.5116199
7 11

Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications

Open Access
Conference Paper
Year: 2019. Pages: 239-242 .
Authors: Augustine Fletcher A.S.;Nirmal D.;Arivazhagan L.;Ajayan J.
DOI 10.1109/ICSPC46172.2019.8976482
1 1

DC and RF Analysis of AlGaN/GaN MOS-HEMT for High Power Application

Open Access
Conference Paper
Year: 2019. Pages: 380-383 .
Authors: Raj Kumar J.S.;Nirmal D.;Arivazhagan L.;Pandit P.P.
DOI 10.1109/ICSPC46172.2019.8976802
1

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

Open Access
article
Microelectronics Journal. Year: 2019. Volume: 92 , Pages: 104604 .
Authors: Ajayan, J and Nirmal, D and Mohankumar, P and Kuriyan, Dheena and Fletcher, AS Augustine and Arivazhagan, L and Kumar, B Santhosh

LG 20 nm high performance gaas substrate based metamorphic metal oxide semiconductor high electron mobility transistor for next generation high speed low power applications

Open Access
article
Journal of Nanoelectronics and Optoelectronics. Year: 2019. Volume: 14 , Pages: 1133--1142 .
Authors: Ajayan, J and Nirmal, D and Mohankumar, P and Arivazhagan, L and Saravanan, M and Saravanan, S

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

Open Access
Article
AEU - International Journal of Electronics and Communications. Year: 2019. Volume: 108 , Pages: 189-194 .
Authors: Arivazhagan L.;Nirmal D.;Godfrey D.;Ajayan J.;Prajoon P.;Augustine Fletcher A.S.;Amir Anton Jone A.;Raj Kumar J.S.
DOI 10.1016/j.aeue.2019.06.015
34 41