Ministry of Education
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Mr Raj Kumar J S

vidwan id: 356452
Male

Assistant Professor, Computer Science and Engineering
Karunya Institute of Technology and Sciences, Coimbatore

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Expertise

  • Computer Science Hardware and Architecture

Publications

Total Articles 11
Books 0
Proceedings 0

Publications

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Scopus

Citations 72
h-index 3

CrossRef

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Citations 66
h-index 4
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Professional Recognition

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Community & Membership

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Bio

Device Modelling, High power VLSI Design, HEMT, Nano electronics

Personal Details

  • Male
  • Assistant Professor , Karunya Institute of Technology and Sciences, Coimbatore
  • Assistant Professor, Department of Computer Science and Engineering, Karunya Institute of Technology and Sciences
MTECH
Other Institute 2019
Assistant Professor Jul 2022 – Present
Karunya Institute of Technology and Sciences, Coimbatore | Computer Science and Engineering

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Co-Authors (6)

Amir Anton Jone

Dr Amir Anton Jone A

Karunya Institute of Technology and Sciences, Coimbatore

Arivazhagan

Mr Arivazhagan L

N/A

Augustine

Dr Augustine Fletcher A S

Karunya Institute of Technology and Sciences, Coimbatore

Nirmal

Dr Nirmal D

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Ajayan

Dr Ajayan J

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Prajoon

Dr Prajoon P

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Scholarly Work

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Scholarly Publications

Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications

Open Access
Article
Year: 2022. Volume: 14 , Issue: 8 , Pages: 4277-4282 .
Authors: Kumar J.S.R.;Nirmal D.;Hooda M.K.;Singh S.;Ajayan J.;Arivazhagan L.
DOI 10.1007/s12633-021-01199-w
14 10

Investigation on L<inf>G</inf> = 50 nm Tapered T-Gated AlGaN/GaN HEMT on Silicon Wafer with a f<inf>T</inf>/f<inf>max</inf> of 264/312 GHz for beyond 5G (B5G) Applications

Open Access
Article
Year: 2022. Volume: 14 , Issue: 17 , Pages: 11315-11322 .
Authors: Kumar J.S.R.;Nirmal D.;Ajayan J.;Tayal S.
DOI 10.1007/s12633-022-01860-y
4 3

Design and Simulation of a T-gated AlGaN/GaN HEMT with Added Mini Field Plate

Open Access
Conference Paper
Year: 2022. Pages: 303-306 .
Authors: Kumar J.S.R.;Nirmal D.;Du John H.V.;Angen Franklin S.;Samuel G.
DOI 10.1109/ICESC54411.2022.9885639
1 2

Variable thermal resistance model of GaN-on-SiC with substrate scalability

Open Access
Article
Journal of Computational Electronics. Year: 2020. Volume: 19 , Issue: 4 , Pages: 1546-1554 .
Authors: Arivazhagan L.;Nirmal D.;Chander S.;Ajayan J.;Godfrey D.;Rajkumar J.S.;Bhagya Lakshmi S.
DOI 10.1007/s10825-020-01561-y
3 3

Self-Heating Analysis of GaN-HEMT for Various Ambient Temperature and Substrate Thickness

Open Access
Conference Paper
Year: 2020. Pages: 267-270 .
Authors: Arivazhagan L.;Mohammed Jarndal A.H.;Chander S.;Godfrey D.G.;Raj Kumar J.S.;Bhagyalakshmi S.;Reddy P.K.;Nirmal D.
DOI 10.1109/ICDCS48716.2020.243595
3

AlGaN/GaN HEMT for highly sensitive detection of Bio-molecules using transconductance method

Open Access
Conference Paper
Year: 2020. Volume: 872 , Issue: 1 .
Authors: Kumar Reddy P.P.;Lakshmi S.B.;Arivazhgan L.;Raj Kumar J.S.;Nirmal D.
DOI 10.1088/1757-899X/872/1/012048
4 3

DC Performance analysis of AlGaN/GaN HEMT for future High power applications

Open Access
Conference Paper
Year: 2019. Pages: 313-318 .
Authors: Pandit P.P.;Arivazhagan L.;Prajoon P.;Rajkumar J.S.;Ajayan J.;Nirmal D.
DOI 10.1109/ICDCSyst.2018.8605071
2 1

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

Open Access
Article
AEU - International Journal of Electronics and Communications. Year: 2019. Volume: 108 , Pages: 189-194 .
Authors: Arivazhagan L.;Nirmal D.;Godfrey D.;Ajayan J.;Prajoon P.;Augustine Fletcher A.S.;Amir Anton Jone A.;Raj Kumar J.S.
DOI 10.1016/j.aeue.2019.06.015
34 41