Ministry of Education
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Dr Harshit Agarwal

vidwan id: 110583
Male

Associate Professor, Department of Electrical Engineering
Indian Institute of Technology Jodhpur

Orchid Icon 0000-0003-4200-5654 Google Scholar Icon 53866052200 Researcher Icon K-1743-2017 Google Scholar Icon https://scholar.google.com/citations?user=SBvJhJIA

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 105
Books 0
Proceedings 0

Publications

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Scopus

Citations 1683
h-index 22

CrossRef

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Citations 927
h-index 17
Google Scholar

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Professional Recognition

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Community & Membership

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Bio

Industry standard compact modeling; Analog and RF modeling, Energy efficient next generation transistors, emerging memories

Personal Details

  • Male
  • Associate Professor , Indian Institute of Technology Jodhpur
  • NH 65 Nagaur Road, Karwar
Ph.D.
Other Institute 2017
Associate Professor Jun 2023 – Present
Indian Institute of Technology Jodhpur | Department of Electrical Engineering
Assistant Professor Dec 2019 – Jun 2023
Indian Institute of Technology Jodhpur | Department of Electrical Engineering

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Co-Authors (14)

Aditi

Dr Aditi Kothiyal

Indian Institute of Technology Gandhinagar

Aditya Sankar

Dr Aditya Sankar Medury

Indian Institute of Science Education and Research(IISER), Bhopal

Avinash

Dr Avinash Lahgere

Indian Institute of Technology Kanpur

Aditya

Dr Aditya Medury

Indian Institute of Technology Kanpur

Amit

Prof Amit Agarwal

Indian Institute of Technology Kanpur

Anurag Singh

Prof Anurag Singh Rathore

Indian Institute of Technology Delhi

Chandan

Dr Chandan Yadav

Indian Institute of Technology Jammu

Yogesh Singh

Dr Yogesh Singh Chauhan

Indian Institute of Technology Kanpur

K.D.P.

Prof K.D.P. Nigam

Indian Institute of Technology Delhi

Nihar Ranjan

Dr Nihar Ranjan Mohapatra

Indian Institute of Technology Gandhinagar

Pragya

Dr Pragya Kushwaha

Indian Institute of Technology Jodhpur

Sivapriya

Dr Sivapriya Kirubakaran

Indian Institute of Technology Gandhinagar

Sahana

Prof Sahana Murthy

Indian Institute of Technology Bombay

Shree Prakash

Dr Shree Prakash Tiwari

Indian Institute of Technology Jodhpur

Scholarly Work

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Scholarly Publications

BSIM-CMG: Standard FinFET compact model for advanced circuit design

Open Access
Conference Paper
Year: 2015. Volume: 2015-October , Pages: 196-201 .
Authors: Duarte J.P.;Khandelwal S.;Medury A.;Hu C.;Kushwaha P.;Agarwal H.;Dasgupta A.;Chauhan Y.S.
DOI 10.1109/ESSCIRC.2015.7313862
71 94

BSIM-IMG: Compact model for RF-SOI MOSFETs

Open Access
Conference Paper
Year: 2015. Volume: 2015-August , Pages: 279-280 .
Authors: Kushwaha P.;Agarwal H.;Khandelwal S.;Duarte J.P.;Medury A.;Hu C.;Chauhan Y.S.
DOI 10.1109/DRC.2015.7175688
14 16

BSIM6: Analog and RF compact model for bulk MOSFET

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2014. Volume: 61 , Issue: 2 , Pages: 234-244 .
Authors: Chauhan Y.S.;Venugopalan S.;Chalkiadaki M.A.;Karim M.A.U.;Agarwal H.;Khandelwal S.;Paydavosi N.;Duarte J.P.;Enz C.C.;Niknejad A.M.;Hu C.
DOI 10.1109/TED.2013.2283084
111 111

BSIM6 - Benchmarking the next-generation MOSFET model for RF applications

Open Access
Conference Paper
Year: 2014. Pages: 421-426 .
Authors: Dutta A.;Sirohi S.;Ethirajan T.;Agarwal H.;Chauhan Y.;Williams R.
DOI 10.1109/VLSID.2014.79
5 7

The enactive equation: Exploring how multiple external representations are integrated, using a fully controllable interface and eye-tracking

Open Access
Conference Paper
Year: 2014. Pages: 233-240 .
Authors: Majumdar R.;Kothiyal A.;Ranka A.;Pande P.;Murthy S.;Agarwal H.;Chandrasekharan S.
DOI 10.1109/T4E.2014.31
7 12

How does representational competence develop? Explorations using a fully controllable interface and eye-tracking

Open Access
Conference Paper
Year: 2014. Pages: 738-743 .
Authors: Kothiyal A.;Majumdar R.;Pande P.;Agarwal H.;Ranka A.;Chandrasekharan S.
5

BSIM compact MOSFET models for SPICE simulation

Open Access
Conference Paper
Year: 2013. Pages: 23-28 .
Authors: Chauhan Y.S.;Venugopalan S.;Paydavosi N.;Kushwaha P.;Jandhyala S.;Duarte J.P.;Agnihotri S.;Yadav C.;Agarwal H.;Niknejad A.;Hu C.C.
25

High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model

Open Access
Conference Paper
Year: 2013. Pages: 56-61 .
Authors: Sahoo J.R.;Agarwal H.;Yadav C.;Kushwaha P.;Khandelwal S.;Gillon R.;Chauhan Y.S.
DOI 10.1109/PrimeAsia.2013.6731178
10 10