Ministry of Education
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Dr Pramod Kumar Tiwari

vidwan id: 99961
Male

Associate Professor, Department of Electrical Engineering
Indian Institute of Technology Patna

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Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 122
Books 0
Proceedings 0

Publications

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Scopus

Citations 1159
h-index 18

CrossRef

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Citations 774
h-index 17
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Bio

Semiconductor device modeling, Simulations,Nanoscale Devices, MG MOSFETs, JLFETs, TFETs, Optoelectronic Applications, THz Devices, Nanotechnology

Personal Details

  • Male
  • Associate Professor , Indian Institute of Technology Patna
  • Indian Institute of Technology Patna, Bihta
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Associate Professor Dec 2019 – Present
Indian Institute of Technology Patna | Department of Electrical Engineering

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Co-Authors (20)

Avinash

Dr Avinash Lahgere

Indian Institute of Technology Kanpur

Aniruddh Bahadur

Dr Aniruddh Bahadur Yadav

Velagapudi Ramakrishna Siddhartha Engineering College, Vasantha Nagar, Kanuru, Vijayawada

Chandan

Dr Chandan Yadav

Indian Institute of Technology Jammu

Ekta

Dr Ekta Goel

National Institute of Technology Warangal

Gopal

Dr Gopal Rawat

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Gopi Krishna

Dr Gopi Krishna Saramekala

National Institute of Technology Calicut

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Dr Mirgender Kumar

Chandigarh Group of Colleges, Jhanjeri

Hemant

Dr Hemant Kumar

Jaypee Institute of Information Technology, Noida

Jawar

Dr Jawar Singh

Indian Institute of Technology Patna

Kamalakanta

Prof Kamalakanta Mahapatra

National Institute of Technology Rourkela

K

Ms K Girija Sravani

Koneru Lakshmaiah Education Foundation, Guntur

Kunal

Dr Kunal Singh

National Institute of Technology Jamshedpur

Raj K

Dr Raj K Gupta

Panjab University

Sarvesh

Dr Sarvesh Dubey

Babasaheb Bhimrao Ambedkar Bihar University, Muzaffarpur

Satyabrata

Prof Satyabrata Jit

Indian Institute of Technology (BHU), Varanasi

Subhradeep

Dr Subhradeep Pal

Birla Institute of Technology and Science

Sumanta

Dr Sumanta Gupta

Indian Institute of Technology Patna

Ayas Kanta

Prof Ayas Kanta Swain

National Institute of Technology Rourkela

Pramod Kumar

Prof Pramod Kumar Tiwari

National Institute of Technology Rourkela

Kunal

Dr Kunal Singh

National Institute of Technology Jamshedpur

Scholarly Work

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Scholarly Publications

Modeling of drain current and analog characteristics of dual-metal quadruple gate (DMQG) MOSFETs

Open Access
Conference Paper
Year: 2019. Pages: 365-368 .
Authors: Samoju V.R.;Saramekala G.K.;Tiwari P.K.;Swain A.K.;Mahapatra K.
DOI 10.1109/iSES47678.2019.00090
1

Temperature dependence of subthreshold characteristics of negative capacitance recessed-source/drain (NC R-S/D) SOI MOSFET

Open Access
Conference Paper
Year: 2019. Pages: 386-389 .
Authors: Moparthi S.;Tiwari P.K.;Samoju V.R.;Saramekala G.K.
DOI 10.1109/iSES47678.2019.00095
1 2

Analytical modeling of subthreshold current and subthreshold swing of schottky-barrier source/drain double gate-all-around (DGAA) MOSFETs

Open Access
Conference Paper
Year: 2019. Pages: 355-359 .
Authors: Kumar A.;Srinivas P.S.T.N.;Tiwari P.K.
DOI 10.1109/iSES47678.2019.00088

Analytical Modeling of Analog/RF Parameters for Trigate Junctionless Field Effect Transistor Incorporating Substrate Biasing Effects

Open Access
Conference Paper
Year: 2019. Volume: 2019-October , Pages: 1838-1841 .
Authors: Gola D.;Singh B.;Tiwari P.K.
DOI 10.1109/TENCON.2019.8929248
1 2

An Insight into Self-Heating Effects and Its Implications on Hot Carrier Degradation for Silicon-Nanotube-Based Double Gate-All-Around (DGAA) MOSFETs

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2019. Volume: 7 , Pages: 1100-1108 .
Authors: Kumar A.;Srinivas P.S.T.N.;Tiwari P.K.
DOI 10.1109/JEDS.2019.2947604
6 14

Effects of lateral spreading in 2-dimensional non-uniform doped junctionless FinFETs

Open Access
Conference Paper
Year: 2019.
Authors: Srinivas P.S.T.N.;Kumar A.;Tiwari P.K.
DOI 10.1109/INEC.2019.8853855
1

Physical insight into self-heating effects in ultrathin junctionless gate-all-around FETs

Open Access
Conference Paper
Year: 2019.
Authors: Kumar A.;Srinivas P.S.T.N.;Tiwari P.K.
DOI 10.1109/INEC.2019.8853852
2 8

Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFETs Using Substrate Bias Induced Effects

Open Access
Article
IEEE Transactions on Nanotechnology. Year: 2019. Volume: 18 , Pages: 329-335 .
Authors: Gola D.;Singh B.;Tiwari P.K.
DOI 10.1109/TNANO.2019.2906567
12 20