Ministry of Education
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Dr Abhishek Misra

vidwan id: 68405
Male

Assistant Professor, Department of Physics
Indian Institute of Technology Madras

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Expertise

  • Condensed Matter Physics

Publications

Total Articles 26
Books 0
Proceedings 0

Publications

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Scopus

Citations 755
h-index 11

CrossRef

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Citations 194
h-index 7
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Professional Recognition

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Community & Membership

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Bio

Condensed Matter Physics, van der Waals layered materials and their heterostructures, Non-volatile memory Technology, CMOS device Physics and Technology

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Madras
  • Indian Institute Of Technology, Chennai, Tamil Nadu, India
Ph.D
Other Institute 2014
Assistant Professor Feb 2018 – Present
Indian Institute of Technology Madras | Department of Physics

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Co-Authors (14)

Akshay

Mr Akshay Singh

Indian Institute of Science Bangalore

Anil

Dr Anil Kottantharayil

Indian Institute of Technology Bombay

Bhaswar

Dr Bhaswar Chakrabarti

Indian Institute of Technology Madras

Gopal K.

Dr Gopal K. Pradhan

Kalinga Institute of Industrial Technology, Bhubaneswar

Kankat

Dr Kankat Ghosh

Indian Institute of Technology Jammu

S

S Kasiviswanathan

Indian Institute of Technology Madras

Birabar Ranjit Kumar

Dr Birabar Ranjit Kumar Nanda

Indian Institute of Technology Madras

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Dr Mangalampalli N Ravikanth

Indian Institute of Technology Bombay

Ravi Prakash

Dr Ravi Prakash Singh

Indian Institute of Science Education and Research(IISER), Bhopal

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Prof V. Ramgopal Rao

Birla Institute of Technology and Science

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Dr Shantanu Mukherjee

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Dr Subhananda Chakrabarti

Indian Institute of Technology Bombay

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Prof Sundaresan A.

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Varun

Dr Varun Raghunathan

Indian Institute of Science Bangalore

Scholarly Work

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Scholarly Publications

Layered semimetal electrodes for future heterogeneous electronics

Open Access
Article
Applied Physics Letters. Year: 2023. Volume: 123 , Issue: 11 .
Authors: Biswal B.;Rajarapu R.;Poudyal S.;Yadav R.;Barman P.K.;Mandal M.;Singh R.P.;Nanda B.R.K.;Misra A.
DOI 10.1063/5.0164063
1 2

Controllable Defect Engineering in 2D-MoS2for high-performance, threshold switching memristive devices

Open Access
Conference Paper
Year: 2022. Volume: 2022-June .
Authors: Thool A.S.;Roy S.;Misra A.;Chakrabarti B.
DOI 10.1109/DRC55272.2022.9855777
1 1

Work function of van der Waals topological semimetals: Experiment and theory

Open Access
Article
Applied Physics Letters. Year: 2022. Volume: 120 , Issue: 9 .
Authors: Biswal B.;Mishra S.B.;Yadav R.;Poudyal S.;Rajarapu R.;Barman P.K.;Pandurang K.R.;Mandal M.;Singh R.P.;Nanda B.R.K.;Misra A.
DOI 10.1063/5.0079032
4 9

Pulsed Carrier Gas Assisted High-Quality Synthetic 3 R-Phase Sword-like MoS2: A Versatile Optoelectronic Material

Open Access
Article
ACS Nano. Year: 2022. Volume: 16 , Issue: 12 , Pages: 21366-21376 .
Authors: Rajarapu R.;Barman P.K.;Yadav R.;Biswas R.;Devaraj M.;Poudyal S.;Biswal B.;Laxmi V.;Pradhan G.K.;Raghunathan V.;Nayak P.K.;Misra A.
DOI 10.1021/acsnano.2c09673
9 10

Twisted monolayer and bilayer graphene for vertical tunneling transistors

Open Access
Article
Applied Physics Letters. Year: 2021. Volume: 118 , Issue: 18 .
Authors: Ghazaryan D.A.;Misra A.;Vdovin E.E.;Watanabe K.;Taniguchi T.;Morozov S.V.;Mishchenko A.;Novoselov K.S.
DOI 10.1063/5.0048191
13

Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe2/CrBr3 van der Waals heterostructures

Open Access
Article
Nature Communications. Year: 2020. Volume: 11 , Issue: 1 .
Authors: Lyons T.P.;Gillard D.;Molina-Sánchez A.;Misra A.;Withers F.;Keatley P.S.;Kozikov A.;Taniguchi T.;Watanabe K.;Novoselov K.S.;Fernández-Rossier J.;Tartakovskii A.I.
DOI 10.1038/s41467-020-19816-4
76

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Open Access
Article
Nature Communications. Year: 2019. Volume: 10 , Issue: 1 .
Authors: Kim G.;Kim S.S.;Jeon J.;Yoon S.I.;Hong S.;Cho Y.J.;Misra A.;Ozdemir S.;Yin J.;Ghazaryan D.;Holwill M.;Mishchenko A.;Andreeva D.V.;Kim Y.J.;Jeong H.Y.;Jang A.R.;Chung H.J.;Geim A.K.;Novoselov K.S.;Sohn B.H.;Shin H.S.
DOI 10.1038/s41467-018-08227-1
5 47

Author Correction: Planar and van der Waals heterostructures for vertical tunnelling single electron transistors (Nature Communications, (2019), 10, 1, (230), 10.1038/s41467-018-08227-1)

Open Access
Erratum
Nature Communications. Year: 2019. Volume: 10 , Issue: 1 .
Authors: Kim G.;Kim S.S.;Jeon J.;Yoon S.I.;Hong S.;Cho Y.J.;Misra A.;Ozdemir S.;Yin J.;Ghazaryan D.;Holwill M.;Mishchenko A.;Andreeva D.V.;Kim Y.J.;Jeong H.Y.;Jang A.R.;Chung H.J.;Geim A.K.;Novoselov K.S.;Sohn B.H.;Shin H.S.
DOI 10.1038/s41467-019-08910-x
1