Ministry of Education
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Prof Jatindra Kumar Rath

vidwan id: 68387
Male

Professor, Department of Physics
Indian Institute of Technology Madras

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Expertise

  • Applied Physics

Publications

Total Articles 242
Books 0
Proceedings 0

Publications

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Scopus

Citations 5069
h-index 34

CrossRef

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Citations 3892
h-index 31
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Professional Recognition

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Community & Membership

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Bio

Photovoltaics, Nanomaterials

Personal Details

  • Male
  • Professor , Indian Institute of Technology Madras
  • Indian Institute Of Technology, Chennai, Tamil Nadu, India
Ph.D
Other Institute 2007
Professor Mar 2018 – Present
Indian Institute of Technology Madras | Department of Physics

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Co-Authors (13)

Vijayan

Prof Vijayan C

Chinmaya Vishwavidyapeeth

Birabar Ranjit Kumar

Dr Birabar Ranjit Kumar Nanda

Indian Institute of Technology Madras

Narendra

Dr Narendra Bandaru

Indian Institute of Technology Madras

R

Dr R Jeyakumar

CSIR-National Physical Laboratory

Ramakrishna

Dr Ramakrishna Madaka

Woxsen University

Ram Subhash

Dr Ram Subhash Maurya

Sardar Patel College of Engineering

Subbiah

Dr Subbiah Alwarappan

Central Electrochemical Research Institute

Sanju

Dr Sanju Rani

S R M Institute of Science & Technology, Chennai

Udai P

Prof Udai P Singh

Kalinga Institute of Industrial Technology, Bhubaneswar

Sivakumar

Dr Sivakumar N

Sri Sairam Engineering College, Chennai

Somnath Chanda

Dr Somnath Chanda Roy

Indian Institute of Technology Madras

TRILOK

Dr TRILOK SINGH

Indian Institute of Technology Kharagpur

Trilok

Prof Trilok Singh

Indian Institute of Technology Delhi

Scholarly Work

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Scholarly Publications

Influence of pressure and plasma potential on high growth rate microcrystalline silicon grown by very high frequency plasma enhanced chemical vapour deposition

Open Access
Article
Year: 2006. Volume: 45 , Issue: 8 A , Pages: 6166-6172 .
Authors: Gordijn A.;Vanecek M.;Goedheer W.J.;Rath J.K.;Schropp R.E.I.
DOI 10.1143/JJAP.45.6166
27 30

Influence on cell performance of bulk defect density in microcrystalline silicon grown by VHF PECVD

Open Access
Article
Year: 2006. Volume: 352 , Issue: 9-20 SPEC. ISS. , Pages: 1868-1871 .
Authors: Gordijn A.;Hodakova L.;Rath J.;Schropp R.
DOI 10.1016/j.jnoncrysol.2005.12.042
34 38

Sensitivity of the dark spectral response of thin film silicon based tandem solar cells on the defective regions in the intrinsic layers

Open Access
Article
Year: 2006. Volume: 352 , Issue: 9-20 SPEC. ISS. , Pages: 1876-1879 .
Authors: Rubinelli F.;Stolk R.;Sturiale A.;Rath J.;Schropp R.
DOI 10.1016/j.jnoncrysol.2006.02.014
10 12

Detailed structural study of low temperature mixed-phase Si films by X-TEM and ambient conductive AFM

Open Access
Article
Year: 2006. Volume: 352 , Issue: 9-20 SPEC. ISS. , Pages: 1011-1015 .
Authors: Mates T.;Bronsveld P.;Fejfar A.;Rezek B.;Kočka J.;Rath J.;Schropp R.
DOI 10.1016/j.jnoncrysol.2005.10.058
25 28

Optimization of n-i-p protocrystalline SiGe:H thin film solar cells for application in thin film multijunction solar cells

Open Access
Article
Year: 2006. Volume: 352 , Issue: 9-20 SPEC. ISS. , Pages: 1941-1944 .
Authors: Li H.;Stolk R.L.;van der Werf C.H.M.;Franken R.H.;Rath J.K.;Schropp R.E.I.
DOI 10.1016/j.jnoncrysol.2006.01.059
26 29

High-efficiency μc-Si solar cells made by very high-frequency plasma-enhanced chemical vapor deposition

Open Access
Article
Year: 2006. Volume: 14 , Issue: 4 , Pages: 305-311 .
Authors: Gordijn A.;Rath J.K.;Schropp R.E.I.
DOI 10.1002/pip.673
40 48

μc-Si:H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate

Open Access
Conference Paper
Thin Solid Films. Year: 2006. Volume: 501 , Issue: 1-2 , Pages: 338-340 .
Authors: Gordijn A.;Francke J.;Rath J.K.;Schropp R.E.I.
DOI 10.1016/j.tsf.2005.07.223
1

A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells

Open Access
Conference Paper
Thin Solid Films. Year: 2006. Volume: 501 , Issue: 1-2 , Pages: 291-294 .
Authors: Strengers J.J.H.;Rubinelli F.A.;Rath J.K.;Schropp R.E.I.
DOI 10.1016/j.tsf.2005.07.198
12 17