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Dr Rakesh Vaid

vidwan id: 64409
Male

Professor, Department of Electronics
Jammu University

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 56
Books 0
Proceedings 0

Publications

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Scopus

Citations 158
h-index 7

CrossRef

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Citations 61
h-index 4
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Professional Recognition

1988

Gold Medal

University of Kashmir
2022

Fulbright-Nehru International Education Administrators Seminar (FNIEAS-2022)

The United States – India Educational Foundation (USIEF)

Community & Membership

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ECS

2015
Member

IEEE

2011
Senior Member

IETE

2008
Fellow

Bio

Dr. Rakesh Vaid Is A Professor In The Department Of Electronics, University Of Jammu, Jammu, India. He Obtained His M.Sc. Degree In Electronics From The University Of Kashmir With Gold Medal And Ph.D. In Electronics From The University Of Jammu. He Has More Than 32 Years Of Teaching/Research Experience. He Is A Senior Member Of IEEE (Usa) And Fellow Of IETE (India) Besides Members Of Various Other Professional Bodies. Dr. Vaid Has More Than 100 Publications To His Credit.

Personal Details

  • Male
  • Professor , Jammu University
  • University of Jammu, Baba Saheb Ambedkar Road, Jammu Tawi
Ph.D
Other Institute 2008
Professor Oct 1997 – Present
Jammu University | Department of Electronics

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Organisations (312+)

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Co-Authors (8)

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Scholarly Work

Synthesis and Characterization of a Triboelectric Nanogenerator (TENG) with Graphene based Porous PDMS-PTFE Composite Film for smart wearable devices

Funding Agency: SERB

PI

2,672,000

2023 - Ongoing

Ongoing
Study of Germanium /III-V compound semiconductors as channel materials for Nanoscale devices

Funding Agency: University Grants Commission, New Delhi, India

PI

1,045,000

2015 - 2018

Completed

Study of Novel Channel Materials in Nanoscale Devices and their Applications

University University of Jammu
Year 2016

Optimization and Analysis of Carbon Nanotubes for Device Applications

University University of Jammu
Year 2016

Modeling and Optimization of Superjunction Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

University University of Jammu
Year 2017

Study of high-k materials for nanoscale devices and their applications

University University of Jammu
Year 2019

Fabrication and characterization of Pt/HfO2/SiON/Si structure employing metal floating gate for non-volatile memory applications.

University University of Jammu
Year 2021

Simulation, fabrication and characterization of silicon based hybrid solar cell employing CNT as main transport layer.

University University of Jammu
Year 2022

Fabrication and performance assessment of a metal- insulator based Triboelectric Nanogenerator

University University of Jammu
Year 2023
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Scholarly Publications

A NEW SUPERJUNCTION POWER MOSFET WITH OXIDE-PILLAR-IN-DRIFT REGION

Open Access
Conference Paper

Single walled CNT chirality dependence for electrical device applications

Open Access
Article
Authors: Dass D.;Prasher R.;Vaid R.
5

Performance of a double gate nanoscale MOSFET (DG-MOSFET) based on novel channel materials

Open Access
Article
Authors: Prasher R.;Dass D.;Vaid R.
12

Impact of scaling gate insulator thickness on the performance of carbon nanotube field effect transistors (CNTFETs)

Open Access
Article
Authors: Dass D.;Prasher R.;Vaid R.
16

Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials

Open Access
Article
Authors: Prasher, Rakesh;Dass, Devi;Vaid, Rakesh

Effect of gate length scaling on various performance parameters in DG-FinFETs: A simulation study

Open Access
Article
Authors: Vaid R.;Chandel M.
1

Exploring indium antimonide (InSb) as novel channel material for nanoscale devices using simulation approach

Open Access
Conference Paper

Effect of drift region doping and coulmn thickness variations in a super junction power MOSFET: A 2-d simulation study

Open Access
Article