Ministry of Education
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Dr Purnachandrarao G

vidwan id: 606192
Male

Assistant Professor, Department of Electronics and Communication Engineering
BVRIT Hyderabad College of Engineering for Women

Orchid Icon 0000-0001-8680-5739 Google Scholar Icon 57886960800 Researcher Icon JNS-1647-2023 Google Scholar Icon 7xxt_S8AAAAJ

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 30
Books 0
Proceedings 0

Publications

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Scopus

Citations 58
h-index 4

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Citations 0
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Bio

Device Modelling, Micro/Nanoelectronics, Compact Modeling and Simulation of AlGaN/GaN and AlGaN/GaN/Ga2O3 based HEMT for High-Power and High-speed electronics

Personal Details

  • Male
  • Assistant Professor , BVRIT Hyderabad College of Engineering for Women
  • BVRITHyderabad
PhD
Other Institute 2024
M. Tech
Other Institute 2011
B. Tech
Other Institute 2007
Assistant Professor Aug 2024 – Present
BVRIT Hyderabad College of Engineering for Women | Department of Electronics and Communication Engineering
Research Fellow Aug 2020 – Jul 2024
National Institute of Technology Silchar | Department of Electronics and Communication Engineering
Assistant Professor Jul 2012 – Aug 2020
SVS Group of Institutions
Assistant Professor Jul 2007 – Jun 2012
Dr.PAUL RAJ ENGINEERING COLLEGE

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Co-Authors (3)

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Mr Ediga Raghuveera

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Scholarly Work

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A DEVICE FOR DESIGNING HAFNIUM (IV) OXIDE (HFO2)/SILICON DIOXIDE (SIO2) ENCAPSULATION-BASED III NITRIDE MULTI-QUANTUM WELL NANOWIRE WHITE LED

Gadadasu Purnachandra Rao
Samadrita Das
Rabin Paul
Prof. Truti Ranjan Lenka
Prof. Fazal Ahmed Talukdar
Ravi Teja Velpula
Prof. Hieu Pham Trung Nguyen
- Application No. : 2022/12105 Filed : 05-01-2023
Published : N/A Granted

Eine n-dotierte a-Si/CZTSe-Ultra-Dünnschicht-Solarzelle für die Energiegewinnung

Gadadasu Purnachandra Rao
Samadrita Das
Truti Ranjan Lenka
Rabin Paul
Prof. Fazal Ahmed Talukdar
Susanta Kumar Tripathy
- Application No. : 20 2022 102 674 Filed : 02-03-2022
Published : N/A Granted

Scholarly Publications

Linearity analysis of III-Nitride/β-Ga2O3 Nano-HEMT for emerging RF/Microwave applications

Open Access
Article
Microsystem Technologies. Year: 2024.
Authors: Rao G.P.;Lenka T.R.;Nguyen H.P.T.
DOI 10.1007/s00542-024-05736-6
2

Effect of temperature dependence of 2DEG on device characteristics of field-plated recessed-gate III-nitride/ß-Ga2O3 nano-HEMT

Open Access
article
Year: 2024.
Authors: G Purnachandra Rao, Trupti Ranjan Lenka, Nour El I Boukort, Hieu Pham Trung Nguyen

REALIZATION OF KINK EFFECT IN THE DRAIN CHARACTERISTICS OF III-NITRIDE/Β-GA2O3 NANO-HEMT DUE TO TRAPS AND SELF-HEATING

Open Access
Article
Year: 2024. Volume: 37 , Issue: 2 , Pages: 289-299 .
Authors: Rao G.P.;Lenka T.R.;Nguyen H.P.T.
DOI 10.2298/FUEE2402289R

Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications

Open Access
Article
Engineering Research Express. Year: 2024. Volume: 6 , Issue: 2 .
Authors: Rao G.P.;Lenka T.R.;Vadalà V.;Nguyen H.P.T.
DOI 10.1088/2631-8695/ad3db1
1

Field-plated and back-barrier engineered wide-bandgap III-nitride/β-Ga2O3 nano-HEMT for emerging RF/microwave micro/nanoelectronics applications

Open Access
Article
Microelectronics Reliability. Year: 2024. Volume: 155 .
Authors: Rao G.P.;Lenka T.R.;Nguyen H.P.T.
DOI 10.1016/j.microrel.2024.115365
3

Design and simulation of T-gate AlN/β-Ga2O3 HEMT for DC, RF and high-power nanoelectronics switching applications

Open Access
Article
Year: 2024. Volume: 37 , Issue: 1 .
Authors: Singh R.;Rao G.P.;Lenka T.R.;Prasad S.V.S.;Boukortt N.E.I.;Crupi G.;Nguyen H.P.T.
DOI 10.1002/jnm.3146
11

Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field-plated III-nitride nano-HEMT on β-Ga2O3 substrate

Open Access
Article
Year: 2024. Volume: 37 , Issue: 1 .
Authors: Rao G.P.;Lenka T.R.;Boukort N.E.I.;Nguyen H.P.T.
DOI 10.1002/jnm.3138
5

Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness

Open Access
Article
Year: 2023. Volume: 34 , Issue: 18 .
Authors: Rao G.P.;Lenka T.R.;Boukortt N.E.I.;Sadaf S.M.;Nguyen H.P.T.
DOI 10.1007/s10854-023-10867-z
15