Ministry of Education
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Dr Subhashis Das

vidwan id: 601508
Male

Research Associate,
University of Arkansas

Orchid Icon 0000-0003-1479-1985 Google Scholar Icon 56693347900 Researcher Icon G-6214-2015 Google Scholar Icon skAf3V4AAAAJ

Expertise

  • Materials Science Coatings and Films

Publications

Total Articles 36
Books 0
Proceedings 0

Publications

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Scopus

Citations 326
h-index 10

CrossRef

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Citations 66
h-index 5
Google Scholar

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Professional Recognition

2012

Silver Medal for ranking 2nd

Vidyasagar University
2017

National Post-Doctoral Fellowship

ANRF (erstwhile SERB)
2024

Best Poster Award

SiC+X Workshop 2024, AR, USA

Community & Membership

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Bio

I do research in epitaxial heterostructures for electronics and optoelectronics.

Personal Details

  • Male
  • Research Associate , University of Arkansas
  • 731 West Dickson Street, Fayetteville, AR, USA
Ph. D
Indian Institute of Technology Kharagpur 2017
M. Tech.
Jadavpur University 2012
M. Sc.
Vidyasagar University 2009
B. Sc.
Other Institute 2007
Research Associate Apr 2021 – Present
University of Arkansas

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Organisation (1)

Subhashis

Dr Subhashis Das

Research Associate

Co-Authors (18)

Ankush

Dr Ankush Bag

Indian Institute of Technology Guwahati

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Dr Apurba Chakraborty

Vellore Institute of Technology, Vellore

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Dr Apurba Chakraborty

Birla Institute of Technology and Science

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Dr Arnab Hazra

Birla Institute of Technology and Science

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Prof Dhrubes Biswas

Indian Institute of Technology Kharagpur

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Prof Hitesh Shrimali

Ahmedabad University, Ahmadabad

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Dr Hitesh Shrimali

Indian Institute of Technology Mandi

Partha

Dr Partha Bhattacharyya

Indian Institute of Engineering Science & Technology, Shibpur (formerly Bengal Engineering & Science University)

Chandan Kumar

Prof Chandan Kumar Sarkar

Jadavpur University

Rahul

Dr Rahul Kumar

Birla Institute of Technology and Science

Robin

Dr Robin Khosla

Indian Institute of Technology Mandi

Swapan Kumar

Dr Swapan Kumar Das

CSIR-National Metallurgical Laboratory

Satinder Kumar

Dr Satinder Kumar Sharma

Indian Institute of Technology Mandi

Shivani

Dr Shivani

Jaypee Institute of Information Technology, Noida

Shubhankar

Dr Shubhankar Majumdar

National Institute of Technology, Meghalaya

Sanjay Kumar

Dr Sanjay Kumar Jana

National Institute of Technology, Sikkim

Scholarly Work

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Scholarly Publications

Realization and Performance Analysis of Facile-Processed μ-IDE-Based Multilayer HfS2/HfO2 Transistors

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2019. Volume: 66 , Issue: 7 , Pages: 3236-3241 .
Authors: Sharma S.;Das S.;Khosla R.;Shrimali H.;Sharma S.
DOI 10.1109/TED.2019.2917323
14 15

Highly UV sensitive Sn nanoparticles blended with polyaniline onto micro-interdigitated electrode array for UV-C detection applications

Open Access
Article
Year: 2019. Volume: 30 , Issue: 8 , Pages: 7534-7542 .
Authors: Sharma S.;Das S.;Khosla R.;Shrimali H.;Sharma S.
DOI 10.1007/s10854-019-01067-9
4 11

Facile Synthesis of 2D-HfS2 Flakes for μ-IDE-Based Methanol Sensor: Fast Detection at Room Temperature

Open Access
Article
IEEE Sensors Journal. Year: 2019. Volume: 19 , Issue: 20 , Pages: 9090-9096 .
Authors: Das S.;Sharma S.;Sharma S.
DOI 10.1109/JSEN.2019.2925027
21 22

Observation and analysis of kink effect during drain current inception of GaN HEMT

Open Access
Article
Superlattices and Microstructures. Year: 2018. Volume: 120 , Pages: 101-107 .
Authors: Bag A.;Das S.;Mukhopadhyay P.;Biswas D.
DOI 10.1016/j.spmi.2018.04.035
3

Selective UV Detection by AlGaN/GaN-Based MSM Photo Detector for Integration with Silicon

Open Access
Conference Paper
Year: 2018. Volume: 2018-October .
Authors: Kumari I.;Das S.;Bag A.
DOI 10.1109/ICSENS.2018.8589777
1

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2018. Volume: 65 , Issue: 4 , Pages: 1333-1339 .
Authors: Ghosh S.;Das S.;DInara S.M.;Bag A.;Chakraborty A.;Mukhopadhyay P.;Jana S.K.;Biswas D.
DOI 10.1109/TED.2018.2808334
29

Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

Open Access
Article
Superlattices and Microstructures. Year: 2018. Volume: 113 , Pages: 147-152 .
Authors: Chakraborty A.;Ghosh S.;Mukhopadhyay P.;Das S.;Bag A.;Biswas D.
DOI 10.1016/j.spmi.2017.10.033
5

High-performance CSA-PANI based organic phototransistor by elastomer gratings

Open Access
Article
Organic Electronics. Year: 2018. Volume: 57 , Pages: 14-20 .
Authors: Sharma S.;Khosla R.;Das S.;Shrimali H.;Sharma S.
DOI 10.1016/j.orgel.2018.02.031
10 10