Ministry of Education
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Dr Sunil Babu Eadi

vidwan id: 599679
Male

Scientific Officer, IDRP- AIoT and Applications
Indian Institute of Technology Jodhpur

Orchid Icon 0009-0006-9170-2244 Google Scholar Icon 54893515500

Expertise

  • Materials Science Multidisciplinary

Publications

Total Articles 61
Books 0
Proceedings 0

Publications

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Scopus

Citations 738
h-index 18

CrossRef

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Citations 171
h-index 8
Google Scholar

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Professional Recognition

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Community & Membership

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Bio

Hydrogen Energy and Sensing Technology; Micro and Nano Fabrication Technology;

Personal Details

  • Male
  • Scientific Officer , Indian Institute of Technology Jodhpur
  • NH- 62, Nagaur Road, Karwar
Ph.D.
Other Institute 2015
M.Sc.
University of Hyderabad 2008
B.Sc.
Andhra University 2006
Scientific Officer Dec 2023 – Present
Indian Institute of Technology Jodhpur | IDRP- AIoT and Applications

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Scholarly Work

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Scholarly Publications

Fluorine-implanted indium-gallium-zinc oxide (IGZO) chemiresistor sensor for high-response NO2 detection

Open Access
Article
Chemosphere. Year: 2021. Volume: 284 .
Authors: Eadi S.B.;Shin H.J.;Kumar P.S.;Song K.W.;Yuvakkumar R.;Lee H.D.
DOI 10.1016/j.chemosphere.2021.131287
20

Correlation between low-frequency noise and interface traps of fully-depleted silicon-on-insulator tunneling FETs induced by hot carrier stress

Open Access
Article
Japanese Journal of Applied Physics. Year: 2020. Volume: 59 , Issue: 10 .
Authors: Shin H.J.;Song H.D.;Song H.S.;Eadi S.B.;Choi H.W.;Kim S.H.;Kim D.W.;Lee H.D.;Kwon H.M.
DOI 10.35848/1347-4065/abb8f0
4

Effect of Al doping on the properties of ZnO nanorods synthesized by hydrothermal growth for gas sensor applications

Open Access
Article
Korean Journal of Materials Research. Year: 2020. Volume: 30 , Issue: 8 , Pages: 399-405 .
Authors: Srivastava V.;Babu E.S.;Hong S.K.
DOI 10.3740/MRSK.2020.30.8.399
1

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

Open Access
Article
Japanese Journal of Applied Physics. Year: 2020. Volume: 59 .
Authors: Song H.D.;Song H.S.;Eadi S.B.;Choi H.W.;Shin H.J.;Lee J.W.;Yang J.W.;Lee H.D.
DOI 10.35848/1347-4065/ab8e1c
4

Test Structures for Noise Reduction of Fully Depleted-Silicon on Insulator p-Type Tunneling FET Using Channel Orientation

Open Access
Conference Paper
Year: 2020. Volume: 2020-May .
Authors: Song H.D.;Song H.S.;Eadi S.B.;Choi H.W.;Lee G.W.;Lee H.D.
DOI 10.1109/ICMTS48187.2020.9107915

Investigation of Random Telegraph Noise Characteristics with Intentional Hot Carrier Aging

Open Access
Conference Paper
Year: 2020. Volume: 2020-April .
Authors: Song H.S.;Eadi S.B.;Song H.D.;Choi H.W.;Lee G.W.;Lee H.D.
DOI 10.1109/IRPS45951.2020.9129212

Improvement in NO2 gas sensing performance using igzo film sensor

Open Access
Conference Paper
ECS Transactions. Year: 2020. Volume: 97 , Issue: 6 , Pages: 71-78 .
Authors: Eadi S.B.;Jeong J.K.;Song H.S.;Lee G.W.;Lee H.D.
DOI 10.1149/09706.0071ecst
2

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Open Access
Article
Scientific Reports. Year: 2020. Volume: 10 , Issue: 1 .
Authors: Eadi S.B.;Lee J.C.;Song H.S.;Oh J.;Lee G.W.;Lee H.D.
DOI 10.1038/s41598-020-61011-4
8