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Dr Nand Lal Sharma

vidwan id: 599638
Male

Scientific Officer, IDRP- AIoT and Applications
Indian Institute of Technology Jodhpur

Expertise

  • Applied Physics

Publications

Total Articles 11
Books 0
Proceedings 0

Publications

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Scopus

Citations 64
h-index 5

CrossRef

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Citations 2
h-index 1
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Professional Recognition

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Community & Membership

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Bio

Molecular Beam Epitaxy, III-V Semiconductor Quantum Dots, PL Spectroscopy, Ultra-high Vacuum Systems

Personal Details

  • Male
  • Scientific Officer , Indian Institute of Technology Jodhpur
  • NH- 62, Nagaur Road, Karwar
Ph.D.
Other Institute 2017
M.Tech.
Indian Institute of Technology Delhi 2013
M.Sc.
Other Institute 2010
B.Sc.
Other Institute 2008
Scientific Officer Dec 2023 – Present
Indian Institute of Technology Jodhpur | IDRP- AIoT and Applications

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Dr Avinash Sharma

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Co-Authors (4)

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Scholarly Work

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Scholarly Publications

Statistical limits for entanglement swapping with semiconductor entangled photon sources

Open Access
Article
Authors: Yang J.;Zopf M.;Li P.;Sharma N.L.;Nie W.;Benthin F.;Fandrich T.;Rugeramigabo E.P.;Hopfmann C.;Keil R.;Schmidt O.G.;Ding F.

Photoneutralization of charges in GaAs quantum dot based entangled photon emitters

Open Access
Article
Authors: Yang J.;Fandrich T.;Benthin F.;Keil R.;Sharma N.L.;Nie W.;Hopfmann C.;Schmidt O.G.;Zopf M.;Ding F.

Experimental optimization of the fiber coupling efficiency of GaAs quantum dot-based photon sources

Open Access
Article
Authors: Nie W.;Sharma N.L.;Weigelt C.;Keil R.;Yang J.;Ding F.;Hopfmann C.;Schmidt O.G.

Optoelectronic sampling of ultrafast electric transients with single quantum dots

Open Access
Article
Authors: Widhalm A.;Krehs S.;Siebert D.;Sharma N.L.;Langer T.;Jonas B.;Reuter D.;Thiede A.;Förstner J.;Zrenner A.

Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

Open Access
Article
Authors: Hopfmann C.;Sharma N.L.;Nie W.;Keil R.;Ding F.;Schmidt O.G.

Maximally entangled and gigahertz-clocked on-demand photon pair source

Open Access
Article
Authors: Hopfmann C.;Nie W.;Sharma N.L.;Weigelt C.;Ding F.;Schmidt O.G.

Electrically controlled rapid adiabatic passage in a single quantum dot

Open Access
Article
Authors: Mukherjee A.;Widhalm A.;Siebert D.;Krehs S.;Sharma N.;Thiede A.;Reuter D.;Förstner J.;Zrenner A.

Sequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: Electrical characterization

Open Access
Article
Authors: Sharma N.L.;Rajamani S.;Shengurov V.;Baidus N.;Korolev D.;Nikolskaya A.;Mikhaylov A.;Tetelbaum D.;Kumar M.