Ministry of Education
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Mr K. R. Gunasekhar

vidwan id: 54893
Male

Retired Faculty, Instrumentation and Applied Physics
Indian Institute of Science Bangalore

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Expertise

  • Multidisciplinary Physics

Publications

Total Articles 54
Books 0
Proceedings 0

Publications

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Scopus

Citations 1491
h-index 21

CrossRef

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Citations 1350
h-index 20
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Community & Membership

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Bio

PAPVD, Ion Plating, Sputtering Techniques for Tribological, Defence, Space Applications.

Personal Details

  • Male
  • Retired Faculty , Indian Institute of Science Bangalore
  • Department of Instrumentation and Applied Physics, Indian Institute of Science
Ph.D.
Other Institute 1993
Retired Faculty Jul 2019 – Present
Indian Institute of Science Bangalore | Instrumentation and Applied Physics
Principal Scientist Aug 2010 – Nov -0001
Indian Institute of Science Bangalore | Instrumentation and Applied Physics

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Co-Authors (15)

B.

Dr B. Sudhakar Reddy, Professor of P

Professor

.B.

Prof .B. Sudhakar Reddy Ph.D. FRSC, Pro

Govt.Degree College for Men, Kadapa

R.

Prof R. Ganesan

Indian Institute of Science Bangalore

K.P.

Dr K.P. Ramesh

Indian Institute of Science Bangalore

K.

Prof K. Ramesh

Indian Institute of Science Bangalore

Ghanashyam Krishna

Prof Ghanashyam Krishna Mamidipudi

University of Hyderabad

Padma

Dr Padma Rapur

Institute of Aeronautical Engineering

Prashantha

Mr Prashantha Murahari

N/A

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Dr Ramakrishnan Ganesan

Birla Institute of Technology and Science

Sai Siva

Prof Sai Siva Gorthi

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Sanjiv

Dr Sanjiv Sambandan

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Dr K Siva Kumar

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Vani K S

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Ganesan

Dr Ganesan Vedachalaiyer

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Prof R P Vijayalakshmi

Sri Venkateswara University

Scholarly Work

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Scholarly Publications

Electrical properties of thermal evaporated Cd1-x Mnx S nanocrystalline films

Open Access
Article
Journal of The Electrochemical Society. Year: 2008. Volume: 155 , Issue: 6 , Pages: H407-H411 .
Authors: Reddy D.;Kumar K.;Reddy N.;Reddy B.;Gunasekhar K.;Reddy P.
DOI 10.1149/1.2902327

Synthesis and optical characterization of Cd1-xMnxS nano-crystalline films

Open Access
Article
Optical Materials. Year: 2008. Volume: 30 , Issue: 6 , Pages: 924-929 .
Authors: Reddy D.;Reddy D.;Reddy B.;Reddy N.;Gunasekhar K.;Reddy P.
DOI 10.1016/j.optmat.2007.04.004
8 8

Microstructure and nanohardness of the diluted magnetic semiconducting Cd 1-x Mn x S nano-crystalline films

Open Access
Article
Applied Surface Science. Year: 2007. Volume: 253 , Issue: 17 , Pages: 7318-7322 .
Authors: Reddy D.S.;Reddy B.K.;Reddy N.K.;Gunasekhar K.R.;Reddy P.S.
DOI 10.1016/j.apsusc.2007.03.025
5 5

Structural and morphological properties of thermally evaporated Zn 1-xMnxS nanocrystalline films

Open Access
Article
Year: 2007. Volume: 9 , Issue: 12 , Pages: 3743-3746 .
Authors: Sreekantha Reddy D.;Maheswara Reddy M.;Narasimha Rao K.;Gunasekhar K.R.;Sreedhara Reddy P.
6

Thickness Effect on the Physical Properties of Evaporated SnS Films

Open Access
Article
Journal of The Electrochemical Society. Year: 2007. Volume: 154 , Issue: 2 , Pages: H67-H73 .
Authors: Devika M.;Reddy N.K.;Ramesh K.;Ganesan R.;Gunasekhar K.R.;Gopal E.S.R.;Reddy K.T.R.
DOI 10.1149/1.2398816
71 78

Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique

Open Access
Article
Year: 2007. Volume: 19 , Issue: 30 .
Authors: Devika M.;Koteeswara Reddy N.;Sreekantha Reddy D.;Venkatramana Reddy S.;Ramesh K.;Gopal E.S.R.;Gunasekhar K.R.;Ganesan V.;Hahn Y.B.
DOI 10.1088/0953-8984/19/30/306003
23 33

Structural and photoluminescence properties of thermally evaporated Cd1-xMnxS nano-crystalline films

Open Access
Article
Solid State Communications. Year: 2007. Volume: 142 , Issue: 8 , Pages: 466-471 .
Authors: Sreekantha Reddy D.;Raja Reddy D.;Koteeswara Reddy N.;Gunasekhar K.R.;Vijayalakshmi R.P.;Reddy B.K.;Sreedhara Reddy P.
DOI 10.1016/j.ssc.2007.03.025
5 7

Temperature-dependent structural and optical properties of SnS films

Open Access
Conference Paper
Journal of Applied Physics. Year: 2007. Volume: 101 , Issue: 9 .
Authors: Koteeswara Reddy N.;Hahn Y.;Devika M.;Sumana H.;Gunasekhar K.
DOI 10.1063/1.2729450
89 101