Dr Gaurab Banerjee
vidwan id: 54875
Associate Professor, Electrical Communication Engineering
Indian Institute of Science Bangalore
Expertise
- Electrical and Electronic Engineering
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Scopus
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14
CrossRef
Citations
504
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11
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Bio
Analog & Mixed-Signal Systems Research,Gaurab Banerjee Analog, Mixed Signal And Radio-Frequency Integrated Circuits and Systems
Personal Details
- Male
- Associate Professor , Indian Institute of Science Bangalore
- Indian Institute of Science
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Co-Authors (10)
Indian Institute of Science Bangalore
Indian Institute of Technology Madras
Indian Institute of Science Bangalore
Indian Institute of Technology (BHU), Varanasi
Central Glass and Ceramic Research Institute
Indian Institute of Space Science and Technology
Calcutta University
Indian Institute of Science Bangalore
Indian Institute of Science Bangalore
National Institute of Technology Rourkela
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BREATHING ASSISTANCE APPARATUS
INDIAN INSTITUTE OF SCIENCE
CMOS WIDEBAND RF AMPLIFIER WITH GAIN ROLL-OFF COMPENSATION FOR EXTERNAL PARASITICS
Indian Institute of Science
Banglaore
Karnataka
IN | INDIAN INSTITUTE OF SCIENCE
Bangalore
Karnataka
IN | INDIAN INST SCIENT
CMOS wideband RF amplifier with gain roll-off compensation for external parasitics
Indian Institute of Science
Bangalore
IN | Indian Institute of Science
Bangalore
Karnataka
IN | INDIAN INST SCIENT
AMPLIFICATEUR RF À LARGE BANDE CMOS AVEC COMPENSATION D'AFFAIBLISSEMENT DE GAIN POUR PARASITES EXTERNES | CMOS WIDEBAND RF AMPLIFIER WITH GAIN ROLL-OFF COMPENSATION FOR EXTERNAL PARASITICS
INDIAN INSTITUTE OF SCIENCE
IN
AMPLIFICATEUR RF À LARGE BANDE CMOS AVEC COMPENSATION D'AFFAIBLISSEMENT DE GAIN POUR PARASITES EXTERNES | CMOS WIDEBAND RF AMPLIFIER WITH GAIN ROLL-OFF COMPENSATION FOR EXTERNAL PARASITICS
INDIAN INSTITUTE OF SCIENCE
IN
CMOS WIDEBAND RF AMPLIFIER WITH GAIN ROLL-OFFCOMPENSATION FOR EXTERNAL PARASITICS
Indian Institute of Science
CMOS WIDEBAND RF AMPLIFIER WITH GAIN ROLL- OFF COMPENSATION FOR EXTERNAL PARASITICS
Indian Institute of Science
Scholarly Publications
Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 micro m SiGe BiCMOS technology
Open AccessIonizing radiation effects in Silicon-Germanium Bicmos technology
Open AccessSession J: Isolation Technologies-Total Dose Effects on the Shallow-Trench Isolation Leakage Current Characteristics in a 0.35 mm SiGe BiCMOS Technology
Open AccessAnomalous dose rate effects in gamma irradiated sige heterojunction bipolar transistors
Open Access
10.1109/23.819130
38
41