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Dr Bahniman Ghosh

vidwan id: 53436
Male

,

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 131
Books 0
Proceedings 0

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Scopus

Citations 979
h-index 15

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Citations 855
h-index 15
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Honor Society of Phi Kappa Phi in the university of Texas at Austin

2006
Member

Bio

Device Simulation, Digital and Analog Circuits

Personal Details

  • Male
  • Indian Institute of Technology Kanpur
Ph.D
University of Texas 2007
Retired Assistant Professor Jan 2009 – —
Indian Institute of Technology Kanpur | Department of Electrical Engineering

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Scholarly Work

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Scholarly Publications

Leakage current reduction in junctionless tunnel FET using a lightly doped source

Open Access
Article
Authors: Basak, Shibir;Asthana, Pranav Kumar;Goswami, Yogesh;Ghosh, Bahniman

Device physics of germanium-junctionless tunnel field effect transistor and an approach to optimize I<inf>on</inf>/I<inf>off</inf> by drain engineering and work function engineering

Open Access
Article

Read and write analysis for balanced pattern memristor crossbar array

Open Access
Article
Authors: Sharma, Arun Kant;Asapu, Shiva;Salimath, Akshaykumar;Ghosh, Bahniman

Ab-initio modeling of effect of Boron and Phosphorus doping in CoFe/MgO Magnetic Tunnel Junctions

Open Access
Conference Paper
Authors: Verma, Ankit Kumar;Ghosh, Bahniman;Awadhiya, Bhaskar;Kumar, Tangudu Bharat

Impact of high-κ spacer on junctionless transistor in sub-threshold regime

Open Access
Article

Spin transport in core-shell nanowires of dilute magnetic semiconductors

Open Access
Article

Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor

Open Access
Article
Authors: Basak, Shibir;Asthana, Pranav Kumar;Goswami, Yogesh;Ghosh, Bahniman

A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope

Open Access
Article
Authors: Kumar Asthana, Pranav;Goswami, Yogesh;Basak, Shibir;Ghosh, Bahniman