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Dr Sk Ziaur Rahaman

vidwan id: 531094
Male

Assistant Professor, Department of Electronics
Banwarilal Bhalotia College

Expertise

  • Nanoscience and Nanotechnology

Publications

Total Articles 82
Books 0
Proceedings 0

Publications

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Scopus

Citations 904
h-index 17

CrossRef

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Citations 94
h-index 3
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Professional Recognition

2014

“Outstanding Research Award” for working in the United Microelectronics Project “90 nm RRAM Technology”

Industrial Technology Research Institute, Taiwan
2015

“Excellent Research & Innovation Award” for working on “Low-Cost Embedded Nonvolatile Memory Technology"”

Industrial Technology Research Institute, Taiwan
2015

“Annual Best Paper Award” for “IEEE EDL"

Industrial Technology Research Institute, Taiwan
2016

“Outstanding Research Award” for working in the HGST Project “RRAM Technology Development”,

Industrial Technology Research Institute, Taiwan
2017

"Platinum International Talent Card”

Ministry of Economic Affairs, Taiwan
2018

“Outstanding Research Award” for working on “SOT-MRAM Technology Development”

Industrial Technology Research Institute, Taiwan
2018

“Outstanding Research Award” for working on “SOT-MRAM Technology”

Industrial Technology Research Institute, Taiwan
2019

“Excellent Work Award” for working on “STT-MRAM Technology Development”

Industrial Technology Research Institute, Taiwan
2019

“Annual Best Paper Award” for published in “IEEE Electron Device Letters"

Industrial Technology Research Institute, Taiwan
2020

“Outstanding Research Award” for the development of “SOT-MRAM Technology”

Industrial Technology Research Institute, Taiwan
2020

“Gold Medal” for working on “Memory Technology for smart Internet of Things”

Industrial Technology Research Institute, Taiwan
2021

“Outstanding Research Award” for the development of “SOT-MRAM Technology”

Industrial Technology Research Institute, Taiwan
2022

“Outstanding Research Award” for the development of “SOT-MRAM Technology”

Industrial Technology Research Institute, Taiwan

Community & Membership

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Bio

A researcher in the area of Nanoscience and Nanotechnology

Personal Details

  • Male
  • Assistant Professor , Banwarilal Bhalotia College
Ph.D.
Other Institute 2012
M. Tech.
Jadavpur University 2007
M. Sc.
Jadavpur University 2004
B. Sc.
Vidyasagar University 2001
Assistant Professor Dec 2023 – Present
Banwarilal Bhalotia College | Department of Electronics

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Organisations (129+)

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Baijayanti

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Sagen

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Co-Authors (5)

Atanu

Dr Atanu Das

Midnapore City College

Rajat

Prof Rajat Mahapatra

National Institute of Technology Durgapur

Santanu

Prof Santanu Manna

Indian Institute of Technology Delhi

Samit K

Dr Samit K Ray

Indian Institute of Technology Kharagpur

Sourav

Dr Sourav Roy

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Scholarly Work

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Magnetic memory structure

Industrial Technology Research Institute ITRI
Engineering and Technology Patent No. : US20240206347A1 Filed : 15-12-2022
Published : 20-06-2024 Published

Magnetic memory structure

Industrial Technology Research Institute ITRI
Engineering and Technology Patent No. : US11758821B2 Filed : 08-12-2021
Published : 31-03-2022 Granted

Magnetic memory structure

Industrial Technology Research Institute ITRI
Engineering and Technology Patent No. : US11227990B2 Filed : 17-07-2019
Published : 21-01-2021 Granted

Scholarly Publications

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeO<inf>x</inf>/W cross-point memories

Open Access
Article

Ti/HfO<inf>2</inf> based RRAM operation voltage scaling for embedded memory

Open Access
Conference Paper
Authors: Tsai C.H.;Chen F.T.;Lee H.Y.;Chen Y.S.;Tsai K.H.;Wu T.Y.;Rahaman S.Z.;Gu P.Y.;Chen W.S.;Chen P.S.;Lin Z.H.;Tseng P.L.;Lin W.P.;Lin C.H.;Sheu S.S.;Tsai M.J.;Ku T.K.

Resistance instabilities in a filament-based resistive memory

Open Access
Conference Paper
Authors: Chen F.T.;Lee H.Y.;Chen Y.S.;Rahaman S.Z.;Tsai C.H.;Tsai K.H.;Wu T.Y.;Chen W.S.;Gu P.Y.;Lin Y.D.;Sheu S.S.;Tsai M.J.;Lee L.H.;Ku T.K.;Chen P.S.

Scalability issue in Ti/HfO bipolar resistive memory with 1T-1R configuration by resistance pinning effect during 1<sup>st</sup> RESET and its solution

Open Access
Conference Paper
Authors: Lee H.Y.;Chen P.S.;Chen Y.S.;Tsai C.H.;Gu P.Y.;Wu T.Y.;Tsai K.H.;Rahaman S.Z.;Lin Y.T.;Chen W.S.;Chen F.T.;Tsai M.J.;Ku T.K.

Good memory performance and coexistence of bipolar and unipolar resistive switching for CMOS compatible Ti/HfO<inf>x</inf>/W memory

Open Access
Conference Paper
Authors: Tsai K.H.;Chen P.S.;Wu T.Y.;Chen Y.S.;Lee H.Y.;Chen W.S.;Tsai C.H.;Gu P.Y.;Rahaman S.Z.;Lin Y.D.;Chen F.;Tsai M.J.;Ku T.K.

Improvement of switching uniformity and scalability in 1T-1R HfO <inf>x</inf>-based bipolar resistive memory with Zr inserting layer

Open Access
Conference Paper
Authors: Wu T.Y.;Chen W.S.;Chen Y.S.;Chen P.S.;Lee H.Y.;Tsai K.H.;Tsai C.H.;Gu P.Y.;Rahaman S.Z.;Lin Y.T.;Chen F.T.;Tsai M.J.;Ku T.K.

Record resistance ratio and bipolar/unipolar resistive switching characteristics of memory device using germanium oxide solid electrolyte

Open Access
Article
Authors: Rahaman S.;Maikap S.;Ray S.;Lee H.;Chen W.;Chen F.;Kao M.;Tsai M.

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO<inf>x</inf> interface

Open Access
Article
Authors: Rahaman S.;Maikap S.;Tien T.;Lee H.;Chen W.;Chen F.;Kao M.;Tsai M.