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Dr Anil Annadi

vidwan id: 465977
Male

Assistant Professor, Department of Physics
Mahindra University, Hyderabad

Expertise

  • Multidisciplinary Physics

Publications

Total Articles 62
Books 0
Proceedings 0

Publications

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Scopus

Citations 1379
h-index 19

CrossRef

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Citations 1843
h-index 23
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Bio

Condensed Matter Physics, Solid state electronics

Personal Details

  • Male
  • Assistant Professor , Mahindra University, Hyderabad
  • Department of Physics,Mahindra University, Survey No.62/1A, Bahadurpally, Jeedimetla, Hyderabad-500195
PhD
National University of Singapore 2013
Assistant Professor Mar 2021 – Present
Mahindra University, Hyderabad | Department of Physics

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Organisations (192+)

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Co-Authors (14)

Anil

Dr Anil Annadi

Vellore Institute of Technology, Vellore

Arabinda

Dr Arabinda Haldar

Indian Institute of Technology Hyderabad

Gopinadhan

Dr Gopinadhan Kalon

Indian Institute of Technology Gandhinagar

Jayakumar

Dr Jayakumar Balakrishnan

Indian Institute of Technology, Palakkad

Manu

Prof Manu Jaiswal

Indian Institute of Technology Madras

Chandrasekhar

Dr Chandrasekhar Murapaka

Indian Institute of Technology Hyderabad

Mohd

Dr Mohd Ataullah Khan Khan

Mahindra University, Hyderabad

M Sabarimalai

Dr M Sabarimalai Manikandan

Indian Institute of Technology, Palakkad

Murtaza

Dr Murtaza Bohra

Mahindra University, Hyderabad

Pranjal Kumar

Dr Pranjal Kumar Gogoi

Tezpur University

Abhimanyu Singh

Dr Abhimanyu Singh Rana

BML Munjal University, Gurgaon

Surajit

Dr Surajit Saha

Indian Institute of Science Education and Research(IISER), Bhopal

VENKATESAN

Mr VENKATESAN R

Anna University

Vidyadhar

Dr Vidyadhar Singh

Jai Prakash University

Scholarly Work

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Scholarly Publications

Metal-insulator transition at a depleted LaAlO3/SrTiO 3 interface: Evidence for charge transfer induced by SrTiO 3 phase transitions

Open Access
Article
Authors: Lü W.M.;Wang X.;Liu Z.Q.;Dhar S.;Annadi A.;Gopinadhan K.;Barman A R.;Su H.B.;Venkatesan T.;Ariando

Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

Open Access
Article
Authors: Liu Z.Q.;Leusink D.P.;Lü W.M.;Wang X.;Yang X.P.;Gopinadhan K.;Lin Y.T.;Annadi A.;Zhao Y.L.;Barman A.R.;Dhar S.;Feng Y.P.;Su H.B.;Xiong G.;Venkatesan T.;Ariando

Metal-insulator transition in SrTiO3-x thin films induced by frozen-out carriers

Open Access
Article
Authors: Liu Z.Q.;Leusink D.P.;Wang X.;Lü W.M.;Gopinadhan K.;Annadi A.;Zhao Y.L.;Huang X.H.;Zeng S.W.;Huang Z.;Srivastava A.;Dhar S.;Venkatesan T.;Ariando

Magnetoresistance of two-dimensional and three-dimensional electron gas in LaAlO3/SrTiO3 heterostructures: Influence of magnetic ordering, interface scattering, and dimensionality

Open Access
Article
Authors: Wang X.;Lü W.M.;Annadi A.;Liu Z.Q.;Gopinadhan K.;Dhar S.;Venkatesan T.;Ariando

Multifunctional Ti1-x Tax O2: Ta doping or alloying?

Open Access
Article
Authors: Barman A.R.;Motapothula M.;Annadi A.;Gopinadhan K.;Zhao Y.L.;Yong Z.;Santoso I.;Ariando ;Breese M.;Rusydi A.;Dhar S.;Venkatesan T.

Scaling of flat band potential and dielectric constant as a function of Ta concentration in Ta-TiO<inf>2</inf> epitaxial films

Open Access
Article
Authors: Zhao Y.L.;Barman A.R.;Dhar S.;Annadi A.;Motapothula M.;Wang J.;Su H.;Breese M.;Venkatesan T.;Wang Q.
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