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Dr Raghunandan Swain

vidwan id: 464469
Male

Assistant Professor (Grade-II),
Parala Maharaja Engineering College, Berhampur

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 157
Books 0
Proceedings 0

Publications

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Scopus

Citations 121
h-index 7

CrossRef

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Citations 68
h-index 5
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Professional Recognition

2022

IEEE Senior Member

IEEE

Community & Membership

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IEEE

2016
Professional

Bio

Modeling and Simulation of III-V compound semiconductor devices (normally-off HEMTs, MOSHEMTs, FinHEMTs, MOS-FinHEMTS), Growth and characterization of Metal oxide thin films and nanowires.

Personal Details

  • Male
  • Assistant Professor (Grade-II) , Parala Maharaja Engineering College, Berhampur
  • Parala Maharaja Engineering College
PhD
Other Institute 2016
Assistant Professor (Grade-II) Jul 2016 – Present
Parala Maharaja Engineering College, Berhampur

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Organisations (3+)

Raghunandan

Dr Raghunandan Swain

Assistant Professor (Grade-II)

Suryalok

Dr Suryalok Dash

Assistant Professor (Senior Grade)

SOURAV KUMAR

Dr SOURAV KUMAR BHOI

Assistant Professor - Senior Scale

Sandeep

Mr Sandeep Bhoi

Assistant Professor (Grade-II)

Co-Authors (4)

AMARNATH

Dr AMARNATH GAINI

Associate Professor

Asisa Kumar

Dr Asisa Kumar Panigrahy

Goka Raju Ranga Raju Institute of Engineering & Technology

Kanjalochan

Dr Kanjalochan Jena

LNM Institute of Information Technology, Jaipur

Trupti Ranjan

Dr Trupti Ranjan Lenka

National Institute of Technology Silchar

Scholarly Work

Hardware implementation of face recognition system for criminal identification using FPGA and ASIC

Funding Agency: MeitY

Chief Investigator

6,519,000

2023 - Ongoing

Ongoing
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Scholarly Publications

Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT

Open Access
Article
Authors: Amarnath G.;Swain R.;Lenka T.

Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique

Open Access
article
Authors: Shougaijam, B and Swain, R and Ngangbam, C and Lenka, TR

Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires

Open Access
article
Authors: Shougaijam, B and Swain, R and Ngangbam, C and Lenka, TR

Model development for current--voltage and transconductance characteristics of normally-off AlN/GaN MOSHEMT

Open Access
article
Authors: Swain, Raghunandan and Jena, Kanjalochan and Lenka, Trupti Ranjan

Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal--oxide--semiconductor high electron mobility transistor

Open Access
article
Authors: Jena, Kanjalochan and Swain, Raghunandan and Lenka, Trupti Ranjan

Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices

Open Access
Article

DC \& RF characteristics of normally-off AIN/GaN MOSHEMT by varying oxide thickness

Open Access
inproceedings
Authors: Swain, R and Jena, K and Lenka, TR and Dash, GN and Panda, AK

Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs

Open Access
article
Authors: Jena, Kanjalochan and Swain, Raghunandan and Lenka, TR