Ministry of Education
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Dr Karabi Baruah

vidwan id: 456737
Female

Assistant Professor, School of Engineering and Technology
CMR University, Bangalore

Google Scholar Icon 57216526588

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 13
Books 0
Proceedings 0

Publications

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Scopus

Citations 66
h-index 4

CrossRef

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Citations 49
h-index 3
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Bio

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Personal Details

  • Female
  • Assistant Professor , CMR University, Bangalore
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Assistant Professor Nov 2023 – Present
CMR University, Bangalore | School of Engineering and Technology

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Co-Authors (3)

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Scholarly Work

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Scholarly Publications

An Analytical Approach to Study the Impact of Traps on Ge-Source Double Gate PNPN TFET

Open Access
Article
IETE Journal of Research. Year: 2024. Volume: 70 , Issue: 4 , Pages: 4037-4047 .
Authors: Baruah K.;Bhowmick B.;Baishya S.
DOI 10.1080/03772063.2023.2217794

Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor

Open Access
Article
Indian Journal of Physics. Year: 2023. Volume: 97 , Issue: 5 , Pages: 1473-1485 .
Authors: Baruah K.;Baishya S.
DOI 10.1007/s12648-022-02508-8

Investigation of electrical parameters and temperature analysis of a dual-metal DG PNPN TFET with extended source

Open Access
Article
Engineering Research Express. Year: 2023. Volume: 5 , Issue: 2 .
Authors: Baruah K.;Baishya S.
DOI 10.1088/2631-8695/accb29
3 6

Numerical assessment of dielectrically-modulated short- double-gate PNPN TFET-based label-free biosensor

Open Access
Article
Microelectronics Journal. Year: 2023. Volume: 133 .
Authors: Baruah K.;Baishya S.
DOI 10.1016/j.mejo.2023.105717
22 25

Study of Noise Behavior of Heterojunction Double-Gate PNPN TFET for Different Parameter Variations

Open Access
Conference Paper
Year: 2022. Volume: 781 , Pages: 91-97 .
Authors: Baruah K.;Debnath R.G.;Baishya S.
DOI 10.1007/978-981-16-3767-4_8
2 4

Delta-Doped Layer-Based Hetero-Structure DG-PNPN-TFET: Electrical Property and Temperature Dependence

Open Access
Conference Paper
Year: 2022. Volume: 776 , Pages: 17-25 .
Authors: Baruah K.;Baishya S.
DOI 10.1007/978-981-16-2911-2_3
1 1

Technology computer-aided design simulation of Ge-source double-gate Si-tunnel Field Effect Transistor: Radio frequency and linearity analysis

Open Access
Article
Year: 2022. Volume: 32 , Issue: 10 .
Authors: Baruah K.;Debnath R.G.;Baishya S.
DOI 10.1002/mmce.23316
2 4

Analytical Modeling of Surface Potential of a Double-Gate Heterostructure PNPN Tunnel FET

Open Access
Book Chapter
Year: 2022. Pages: 69-78 .
Authors: Baruah K.;Baishya S.
DOI 10.1201/9781003240778-4