Ministry of Education
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Dr Malleswararao Tangi

vidwan id: 441283
Male

Assistant Professor, Department of Physics
Indian Institute of Technology Guwahati

Orchid Icon 0000-0003-1141-4324 Google Scholar Icon 42561933000

Expertise

  • Condensed Matter Physics

Publications

Total Articles 39
Books 0
Proceedings 0

Publications

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Scopus

Citations 626
h-index 14

CrossRef

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Citations 22
h-index 1
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Professional Recognition

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Community & Membership

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Bio

Quantum materials, Semiconductors, Epitaxial thin films, Nanowires, Spintronics, Optoelectronics

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Guwahati
  • IIT Guwahati
Ph.D.
Other Institute 2015
MSc
University of Hyderabad 2009
Assistant Professor Sep 2023 – Present
Indian Institute of Technology Guwahati | Department of Physics

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Co-Authors (5)

Binoy Krishna

Dr Binoy Krishna Hazra

Indian Institute of Technology Guwahati

Ajayan

Dr Ajayan J

SR University

Nagaraja

Dr Nagaraja K K

Manipal Academy of Higher Education, Manipal

D

Dr D Pamu

Indian Institute of Technology Guwahati

Shivaprasad

Prof Shivaprasad S.M.

Jawaharlal Nehru Centre for Advanced Scientific Research, Banaglore

Scholarly Work

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Scholarly Publications

Lowering of growth temperature of epitaxial InN by superlattice matched intermediate layers

Open Access
Article
Year: 2013. Volume: 210 , Issue: 11 , Pages: 2409-2415 .
Authors: Tangi M.;De A.;Shivaprasad S.M.
DOI 10.1002/pssa.201329345

Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

Open Access
Article
Journal of Applied Physics. Year: 2013. Volume: 114 , Issue: 15 .
Authors: Tangi M.;Kuyyalil J.;Shivaprasad S.
DOI 10.1063/1.4824823
25

In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

Open Access
Article
Materials Research Bulletin. Year: 2013. Volume: 48 , Issue: 2 , Pages: 256-259 .
Authors: Kuyyalil J.;Tangi M.;Shivaprasad S.
DOI 10.1016/j.materresbull.2012.10.011
3

Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

Open Access
Article
Journal of Applied Physics. Year: 2012. Volume: 112 , Issue: 7 .
Authors: Tangi M.;Kuyyalil J.;Shivaprasad S.
DOI 10.1063/1.4757031
13

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

Open Access
Article
Journal of Applied Physics. Year: 2012. Volume: 112 , Issue: 8 .
Authors: Kuyyalil J.;Tangi M.;Shivaprasad S.M.
DOI 10.1063/1.4759449
12

Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

Open Access
Article
Journal of Applied Physics. Year: 2011. Volume: 109 , Issue: 9 .
Authors: Kuyyalil J.;Tangi M.;Shivaprasad S.
DOI 10.1063/1.3580254
11

Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer

Open Access
Conference Paper
Year: 2011. Volume: 1411 , Pages: 67-72 .
Authors: Kumar P.;Tangi M.;Shetty S.;Kesaria M.;Shivaprasad S.M.
DOI 10.1557/opl.2012.760
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