Ministry of Education
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Dr Padma Rapur

vidwan id: 423983
Female

Assistant Professor, Physics
Institute of Aeronautical Engineering

Orchid Icon 0009-0005-6939-126X Google Scholar Icon 22963390700 Researcher Icon JCO-6656-2023 Google Scholar Icon p9clM84AAAAJ

Expertise

  • Condensed Matter Physics

Publications

Total Articles 39
Books 0
Proceedings 0

Publications

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Scopus

Citations 473
h-index 13

CrossRef

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Citations 10
h-index 1
Google Scholar

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Professional Recognition

2018

BK-21 Post Doctoral Fellow

Yonsei University, South Korea

Community & Membership

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Bio

Metal-semiconductor Schottky junctions, metal/insulator/semiconductor Schottky junctions, 2D materials based heterojunctions

Personal Details

  • Female
  • Assistant Professor , Institute of Aeronautical Engineering
Ph.D
Other Institute 2017
M.PHIL
Other Institute 2015
M.Sc
Other Institute 2007
B.Sc
Other Institute 2005
Assistant Professor Sep 2023 – Present
Institute of Aeronautical Engineering | Physics

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Co-Authors (3)

Bhaskar Reddy

Dr Bhaskar Reddy Matli

N/A

K. R.

Mr K. R. Gunasekhar

Indian Institute of Science Bangalore

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Scholarly Work

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Scholarly Publications

Electrical and structural properties of Ir/Ru Schottky rectifiers on n-type InGaN at different annealing temperatures

Open Access
Article
Superlattices and Microstructures. Year: 2013. Volume: 56 , Pages: 64-76 .
Authors: Padma R.;Prasanna Lakshmi B.;Siva Pratap Reddy M.;Rajagopal Reddy V.
DOI 10.1016/j.spmi.2012.12.016
26

Thermal annealing effects on electrical properties of Ir/Ru Schottky contacts on n-InGaN

Open Access
conference proceedings
Year: 2013. Volume: 1536(1) , Pages: 469-470 .
Authors: R. Padma, B. Prasanna lakshmi, V. Rajagopal Reddy

Capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of Ir/n-InGaN Schottky diode as a function of temperature

Open Access
Article
Superlattices and Microstructures. Year: 2013. Volume: 60 , Pages: 358-369 .
Authors: Padma R.;Lakshmi B.P.;Reddy V.R.
DOI 10.1016/j.spmi.2013.05.014
49

Thermal annealing effects on electrical properties of Ir/Ru Schottky contacts on n-InGaN

Open Access
Conference Paper
AIP Conference Proceedings. Year: 2013. Volume: 1536 , Pages: 469-470 .
Authors: Padma R.;Lakshmi B.P.;Reddy V.R.
DOI 10.1063/1.4810304

Annealing effects on electrical, structural and surface morphological properties of Ir/n-InGaN Schottky structures

Open Access
article
Year: 2012. Volume: 209 (10) , Pages: 2027-2033 .
Authors: V. Rajagopal Reddy, R. Padma, M. Siva Pratap Reddy, C.-J. Choi

Electrical properties of rapidly annealed Ir and Ir/Au Schottky contacts on n-type InGaN

Open Access
article
Year: 2012.
Authors: V. Rajagopal Reddy, B. Prasanna Lakshmi, R. Padma

Annealing effects on electrical, structural, and surface morphological properties of Ir/n-InGaN Schottky structures

Open Access
Article
Year: 2012. Volume: 209 , Issue: 10 , Pages: 2027-2033 .
Authors: Reddy V.R.;Padma R.;Reddy M.S.P.;Choi C.J.
DOI 10.1002/pssa.201228224
5