Ministry of Education
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Dr Atanu Das

vidwan id: 333064
Male

Associate Professor, Department of Pure and Applied Sciences
Midnapore City College

Orchid Icon 0000-0002-1733-626X Google Scholar Icon 57212479973 Researcher Icon M-9634-2016 Google Scholar Icon h6IavTQAAAAJ

Expertise

  • Applied Physics

Publications

Total Articles 36
Books 0
Proceedings 0

Publications

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Scopus

Citations 163
h-index 7

CrossRef

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Citations 0
h-index 0
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Professional Recognition

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Community & Membership

2013

Phi-Tao-Phi Scholar Society, Taiwan

Honorary Member
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Bio

Field Effect Transistor, Electro-chemical Sensor

Personal Details

  • Male
  • Associate Professor , Midnapore City College
  • Bhadutala, West Bengal, India
Ph.D.
Other Institute 2013
M.Sc.
Vidyasagar University 2001
B.Sc.
Vidyasagar University 1999
Associate Professor Sep 2021 – Present
Midnapore City College | Department of Pure and Applied Sciences
Assistant Professor Jun 2017 – Nov 2020
Madanapalle Institute of Technology & Science, Madanapalle
Post-Doctoral Research Associate Jan 2015 – May 2017
Academia Sinica | Institute of Physics
Post-Doctoral Fellow Apr 2013 – Dec 2014
National Tsing Hua University, Hsinchu, Taiwan

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Co-Authors (4)

Jitendra Nath

Prof Jitendra Nath Roy

Kazi Nazrul University, Asansol

Jitendra Nath

Dr Jitendra Nath Roy

N/A

Sk Ziaur

Dr Sk Ziaur Rahaman

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Scholarly Work

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High Electron Mobility Field Effect Transistor (HEMT) Device

Chang Gung University (CGU)
Engineering and Technology Patent No. : US20100230722A1 Filed : 05-11-2009
Published : 16-09-2010 Published

Scholarly Publications

Resistive switching mechanisms of high-κ Gd<inf>2</inf>O<inf>3</inf> films in a Cu (IrO<inf>x</inf>)/Gd<inf>2</inf>O<inf>3</inf>/W structure

Open Access
Conference Paper
Year: 2009.
Authors: Das A.
DOI 10.1109/ISDRS.2009.5378130

Wide-band double-ring resonator with transmission zeros and resonances using high permittivity aluminum nitride substrate

Open Access
Article
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. Year: 2009. Volume: 51 , Issue: 12 , Pages: 2878-2882 .
Authors: Liu J.
DOI 10.1002/mop.24787

Physical and memory characteristics of atomic-layer-deposited high-κ hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

Open Access
Article
Japanese Journal of Applied Physics. Year: 2009. Volume: 48 , Issue: 5 PART 2 .
Authors: Das A.
7

High- κ Hf O2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited Hf O2 Al2 O3 nanomixtures

Open Access
Article
Journal of The Electrochemical Society. Year: 2009. Volume: 156 , Issue: 3 .
Authors: Maikap S.

General diffusivity-mobility relationship for heavily doped semiconductors

Open Access
Article
Year: 2009. Volume: 64 , Issue: 3-4 , Pages: 257-262 .
Authors: Khan A.
DOI 10.1515/zna-2009-3-414
1

Resistive switching mechanisms of High-&#x03BA; Gd<inf>2</inf>O<inf>3</inf> films in a Cu (IrO<inf>x</inf>)/Gd<inf>2</inf>O<inf>3</inf>/W structure

Open Access
conference-paper
Year: 2009.
Authors:

Flash memory device characteristics of atomic layer deposited crystallite A1<inf>2</inf>O<inf>3</inf> films with large memory window and long retention

Open Access
Conference Paper
Year: 2008.
Authors: Maikap S.;Banerjee W.;Rahaman S.;Das A.
DOI 10.1109/SNW.2008.5418388

Mobility-diffusivity relationship for heavily doped organic semiconductors

Open Access
Article
Year: 2008. Volume: 93 , Issue: 2 , Pages: 527-532 .
Authors: Das A.
DOI 10.1007/s00339-008-4729-2
7