VEDATRAYEE CHAKRABORTY

vidwan id: 292667

Assistant Professor (Grade-III), ECE
B.P. Poddar Institute of Management and Technology 115

Expertise

Electrical and Electronic Engineering

Publications

Total Articles 11

Books 0

Proceedings 0

Publications

Scopus

Citations 6

h-index 1

CrossRef

Citations 6

h-index 1

Google Scholar

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Professional Recognition

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Community & Membership

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ISTE

2018

Lifetime member

Bio

PhD in radio physics

Personal Details

Assistant Professor (Grade-III) , B.P. Poddar Institute of Management and Technology 115
22, M M Dutta Road, Jatrik Club Para, New Barrakpur, Kolkata, West Bengal, India

Ph.D

Calcutta University 2016

Assistant Professor (Grade-III) Jun 2016 – Present

B.P. Poddar Institute of Management and Technology 115 | ECE

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Assistant Professor (Grade-I)

Dr N PRAKASH

Assistant Professor

Mr Mrinmoy Sadhukhan

Research Scholar

Mr Haranath Rakshit

Junior Research Fellow

Organisations (46+)

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Ms AYESHA ALI

Assistant Professor

Ms ARUNDHATI SENGUPTA

Assistant Professor (Grade-III)

Mr Balaram Ghosal

Assistant Professor (Grade-II)

Dr Abhijit Bhattacharya

Assistant Professor (Grade-II)

Dr Bikromadittya Mondal

Associate Professor

Dr BINOY KRISHNA BISWAS

Assistant Professor (Grade-II)

Mr Amlan Raychaudhuri

Assistant Professor

Dr Argha Kamal Pal

Assistant Professor (Grade-III)

Dr ARIJIT DEY

Assistant Professor (Grade-II)

Mr ARINDRAJIT CHAUDHURY

Assistant Professor (Grade-II)

Co-Authors (1)

Dr Rikmantra Basu

National Institute of Technology, Delhi

Scholarly Work

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Scholarly Publications

Calculated Characteristics of a Transistor Laser Using Alloys of Gr-IV Elements

Open Access

Article

Year: 2018. Volume: 255 , Issue: 9 .

Authors: Mukhopadhyay B.;Sen G.;De S.;Basu R.;Chakraborty V.;Basu P.K.

10.1002/pssb.201800117

Performance Prediction of an Electroabsorption Modulator at 1550 nm Using GeSn/SiGeSn Quantum Well Struct

Open Access

article

Year: 0000.

Authors: Vedatrayee Chakraborty, B.Mukhopadhyay and P.K.Basu

Predicted Performance of Ge/GeSn Hetero- Phototransistors on Si Substrate at 1.55 μm”

Open Access

article

Year: 0000.

Authors: Rikmantra Basu, Vedatrayee Chakraborty, B.Mukhopadhyay and P.K.Basu

Study of GeSn/SiGeSn RCE Photodetectors based on Franz-Keldysh Effect and Quantum Confined Stark Effect

Open Access

article

Year: 0000.

Authors: Vedatrayee Chakraborty, B.Mukhopadhyay and P.K.Basu

Effect of Different Loss Mechanisms in SiGeSn Based Mid-infrared Laser” ISSN 1063 7826, Semiconductors

Open Access

article

Semiconductors. Year: 0000.

Authors: Vedatrayee Chakraborty, B.Mukhopadhyay and P.K.Basu

Current Gain and External Quantum Efficiency Modeling of GeSn based Direct Bandgap Multiple Quantum Well Heterojunction Phototransistor"

Open Access

article

Year: 0000.

Authors: VVedatrayee Chakraborty, Swagata Dey, Rikmantra Basu, Bratati Mukhopadhyay, P.K.Basu

Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

Open Access

article

Year: 0000.

Authors: 6. Swagata Dey , Vedatrayee Chakraborty, Bratati Mukhopadhyay, Gopa Sen

Performance Prediction of a Quantum Well Infrared Photodetector Using GeSn/SiGeSn Structure”

Open Access

article

Journal of Communications Technology and Electronics. Year: 0000.

Authors: 8. S. Dey, G. Sen, V. Chakraborty, and B. Mukhopadhyay

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