Dr Rajan Singh

vidwan id: 275321

Male

0000-0001-8510-4113 Google Scholar Icon

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Expertise

Nanoscience and Nanotechnology

Publications

Total Articles 16

Books 0

Proceedings 0

Publications

Scopus

Citations 244

h-index 6

CrossRef

Citations 6

h-index 1

Google Scholar

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Professional Recognition

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Bio

Ultrawide bandgap semiconductor Gallium Oxide for high-power high-frequency applications and III-V Nitride Semiconductors

Personal Details

Male
MLR INSTITUTE OF TECHNOLOGY, Hyderabad, Telangana, India

Ph. D.

Other Institute 2022

M. Tech.

Galgotias College of Engineering and Technology 2009

B. Tech.

Raja Balwant SinghÂ College 2000

Assistant Professor Apr 2022 – Sep 2022

MLR Institute of Technology

Assistant Professor - Selection Grade Aug 2014 – Jun 2018

Noida Institute of Engineering and Technology, Greater Noida | ECE

Assistant Professor Feb 2003 – Jul 2014

SACHDEVA INSTITUTE OF TECHNOLOGY, MATHURA

Related Profiles

Experts (645+)

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Assistant Professor

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Assistant Professor

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Doctor

Assistant Professor (Grade-I)

Dr N PRAKASH

Assistant Professor

Mr Mrinmoy Sadhukhan

Research Scholar

Mr Haranath Rakshit

Junior Research Fellow

Organisation (0)

Co-Authors (4)

Dr Deepak kumar Panda

N/A

Prof DEEPENDRA SINGH

Kamla Nehru Institute of Technology

Dr Arindam Biswas

Kazi Nazrul University, Asansol

Dr Trupti Ranjan Lenka

National Institute of Technology Silchar

Scholarly Work

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Scholarly Publications

2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics

Open Access

Article

Year: 2022. Volume: 35 , Issue: 1 .

Authors: Lenka T.R.;Singh R.;Tripathy S.K.;Goyal V.;Nguyen T.K.;Nguyen H.P.T.

10.1002/jnm.2941

Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low noise amplification and RF applications

Open Access

Article

Engineering Research Express. Year: 2021. Volume: 3 , Issue: 3 .

Authors: Singh R.;Lenka T.R.;Panda D.K.;Nguyen H.P.T.

10.1088/2631-8695/ac23b3

A novel β-Ga2O3 HEMT with fT of 166 GHz and X-band POUT of 2.91 W/mm

Open Access

Article

Year: 2021. Volume: 34 , Issue: 1 .

Authors: Singh R.;Lenka T.R.;Velpula R.T.;Jain B.;Bui H.Q.T.;Nguyen H.P.T.

10.1002/jnm.2794

Analytical modeling of I-V characteristics using 2D poisson equations in AlN/β-Ga<sub>2</sub>O<sub>3</sub>HEMT

Open Access

other

Year: 2021.

Authors:

Analytical study of effect of energy band parameters and lattice temperature on conduction band offset in AlN/Ga2O3 HEMT

Open Access

journal-article

Year: 2021.

Authors:

10.2298/fuee2103323s

Ga2O3 Based Heterostructure FETs (HFETs) for Microwave and Millimeter-Wave Applications

Open Access

Book Chapter

Year: 2021. Pages: 209-227 .

Authors: Singh R.;Lenka T.R.;Panda D.;Velpula R.T.;Jain B.;Bui H.Q.T.;Nguyen H.P.T.

10.1007/978-981-15-9766-4_11

Emerging Trends in Terahertz Solid-State Physics and Devices

Open Access

book

Year: 2020.

Authors: Arindam Biswas, Amit Banerjee, J N Roy, Horoshi Inokawa

10.1007/978-981-15-3235-1

The dawn of Ga2O3 HEMTs for high power electronics - A review

Open Access

Review

Materials Science in Semiconductor Processing. Year: 2020. Volume: 119 .

Authors: Singh R.;Lenka T.R.;Panda D.K.;Velpula R.T.;Jain B.;Bui H.Q.T.;Nguyen H.P.T.

10.1016/j.mssp.2020.105216

147

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