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Dr Ramkumar N

vidwan id: 264494

Male

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Expertise

Electrical and Electronic Engineering

Publications

Total Articles 16

Books 0

Proceedings 0

Publications

Scopus

Citations 120

h-index 7

CrossRef

Citations 31

h-index 2

Google Scholar

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Professional Recognition

2019

The Confederation of Elite Academicians of IICDC

AICTE, Texas Instruments, IIM Bangalore and DST

2020

Resource person for Two days online Workshop on “EMBEDDED SYSTEM DESIGN on 8-bit MICROCONTROLLER USING KEIL (IDE)” from 29.05.2020 & 30.05.2020

Anil Neerukonda Institute of Technology & Sciences,Visakhapatnam

2020

Resource person for one day online webinar on “EMBEDDED SYSTEM DESIGN on 8-bit MICROCONTROLLER USING KEIL (IDE)”

Narasu’s Sarathy Institute of Technology,Salem,Tamilnadu.

2023

Resource person for one day Guest lecture on

Avanthi’s Research & Technological Academy,Vizianagaram.

Community & Membership

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Member of Indian Society for Technical Education(MISTE)

2011

LIFE MEMBERSHIP CARD

Bio

Completed Ph.D. degree in ECE (Specialization in Microelectronics) at SRM Institute of Science & Technology, Chennai, Tamilnadu. Currently working as an Assistant Professor in the Department of Electronics & Communication Engineering at Assistant Professor,SR University,Warangal since August 2024. My research interest is in the area of III-Nitride semiconductors

Personal Details

Male
SR University,Warangal, Telangana, India

Ph.D

Other Institute 2023

ME

Anna University 2010

BE

KS Rangasamy College of Technology (Autonomous) 2006

Assistant Professor May 2024 – Jul 2024

Sri Eshwar College of Engineering | Department of Electronics and Communication Engineering

Assistant Professor Jun 2016 – May 2024

Anil Neerukonda Institute Of Technology & Sciences, Visakhapatnam | Electronics and Communication Engineering

Assistant Professor Dec 2013 – May 2016

KSR Institute for Engineering and Technology, Namakkal

Assistant Professor Dec 2010 – Dec 2013

Angel College of Engineering and Technology

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Assistant Professor (Grade-I)

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Mr Mrinmoy Sadhukhan

Research Scholar

Mr Haranath Rakshit

Junior Research Fellow

Organisation (0)

no data

Co-Authors (9)

Dr Augustine Fletcher A S

Karunya Institute of Technology and Sciences, Coimbatore

Karunya Institute of Technology and Sciences, Coimbatore

SR University

Dr Eswaran Parthasarathy

S R M Institute of Science & Technology, Chennai

Dr Merlin Gilbert Raj S

Karunya Institute of Technology and Sciences, Coimbatore

Dr Murugapandiyan P

Anil Neerukonda Institute Of Technology & Sciences, Visakhapatnam

Dr Rajyalakshmi Parvathini

Anil Neerukonda Institute Of Technology & Sciences, Visakhapatnam

Seshadri Rao Gudlavalleru Engineering College, Gudlavalleru

Dr Shunmugathammal M

S R M Institute of Science & Technology, Chennai

Scholarly Work

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HEALTH MONITORING AND ALERTING SMART WHEELCHAIR FOR PHYSICALLY DISABLED

Ramkumar Natarajan

Engineering and Technology Application No. : 202341027787 Filed : 28-04-2023

Published : 05-05-2023 Published

SUSTAINABLE GROUNDWATER MANAGEMENT SYSTEM USING IOT.

Ramkumar Natarajan

Engineering and Technology Application No. : 202441031128A Filed : 18-04-2023

Published : 26-04-2023 Published

Scholarly Publications

Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

Article

Year: 2022. Volume: 14 , Issue: 4 , Pages: 1421-1429 .

Authors: Murugapandiyan P.;Nirmal D.;Ajayan J.;Varghese A.;Ramkumar N.

DOI

10.1007/s12633-020-00899-z

11

Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT

Article

Year: 2022. Volume: 14 , Issue: 16 , Pages: 10437-10445 .

Authors: Natarajan R.;Parthasarathy E.;Murugapandiyan P.

DOI

10.1007/s12633-022-01746-z

17

Enhancement of Blocking Voltage in GaN HEMT Using Stacked Passivation Layer

journal-article

Authors: Ramkumar Natarajan .,

DOI

10.1007/s12633-021-01646-8

1

A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations

Article

Journal of Electronic Materials. Year: 2022. Volume: 51 , Issue: 3 , Pages: 1215-1225 .

Authors: Fletcher A.S.A.;Nirmal D.;Arivazhagan L.;Ajayan J.;Raj M.G.;Hamza K.H.;Murugapandiyan P.;Natarajan R.

DOI

10.1007/s11664-021-09367-9

5

Breakdown Voltage Enhancement of Al<inf>0.1</inf>Ga<inf>0.9</inf>N Channel HEMT with Recessed Floating Field Plate

Article

Year: 2022. Volume: 14 , Issue: 11 , Pages: 5961-5973 .

Authors: Natarajan R.;Parthasarathy E.

DOI

10.1007/s12633-021-01322-x

1

4

UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

Article

Year: 2022. Volume: 14 , Issue: 17 , Pages: 11079-11087 .

Authors: Baskaran S.;Shunmugathammal M.;Sivamani C.;Ravi S.;Murugapandiyan P.;Ramkumar N.

DOI

10.1007/s12633-022-01846-w

18

Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier

Article

Year: 2022. Volume: 284 .

Authors: Husna Hamza K.;Nirmal D.;Augustine Fletcher A.S.;Ajayan J.;Natarajan R.

DOI

10.1016/j.mseb.2022.115863

8

13

Ultra-wide bandgap Al0.1Ga0.9N double channel HEMT for RF applications

Article

Year: 2022. Volume: 32 , Issue: 11 .

Authors: Natarajan R.;Parthasarathy E.;Murugapandiyan P.

DOI

10.1002/mmce.23360

10

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